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    Nanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition
    (Heidelberg [u.a.] : Springer, 2017) Liu, Ying; Hirsch, Dietmar; Fechner, Renate; Hong, Yilin; Fu, Shaojun; Frost, Frank; Rauschenbach, Bernd
    The ion beam sputtering (IBS) of smooth mono-elemental Si with impurity co-deposition is extended to a pre-rippled binary compound surface of fused silica (SiO2). The dependence of the rms roughness and the deposited amount of Al on the distance from the Al source under Ar+ IBS with Al co-deposition was investigated on smooth SiO2, pre-rippled SiO2, and smooth Si surfaces, using atomic force microscopy and X-ray photoelectron spectroscopy. Although the amounts of Al deposited on these three surfaces all decreased with increasing distance from the Al target, the morphology and rms roughness of the smooth Si surface did not demonstrate a strong distance dependence. In contrast to smooth Si, the rms roughness of both the smooth and pre-rippled SiO2 surfaces exhibited a similar distance evolution trend of increasing, decreasing, and final stabilization at the distance where the results were similar to those obtained without Al co-deposition. However, the pre-rippled SiO2 surfaces showed a stronger modulation of rms roughness than the smooth surfaces. At the incidence angles of 60° and 70°, dot-decorated ripples and roof-tiles were formed on the smooth SiO2 surfaces, respectively, whereas nanostructures of closely aligned grains and blazed facets were generated on the pre-rippled SiO2, respectively. The combination of impurity co-deposition with pre-rippled surfaces was found to facilitate the formation of novel types of nanostructures and morphological growth. The initial ripples act as a template to guide the preferential deposition of Al on the tops of the ripples or the ripple sides facing the Al wedge, but not in the valleys between the ripples, leading to 2D grains and quasi-blazed grating, which offer significant promise in optical applications. The rms roughness enhancement is attributed not to AlSi, but to AlOxFy compounds originating mainly from the Al source.
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    35 W continuous-wave Ho:YAG single-crystal fiber laser
    (Cambridge : Cambridge Univ. Press, 2020) Zhao, Yongguang; Wang, Li; Chen, Weidong; Wang, Jianlei; Song, Qingsong; Xu, Xiaodong; Liu, Ying; Shen, Deyuan; Xu, Jun; Mateos, Xavier; Loiko, Pavel; Wang, Zhengping; Xu, Xinguang; Griebner, Uwe; Petrov, Valentin
    We report on a high-power Ho:YAG single-crystal fiber (SCF) laser inband pumped by a high-brightness Tm-fiber laser at 1908 nm. The Ho:YAG SCF grown by the micro-pulling-down technique exhibits a propagation loss of at. A continuous-wave output power of 35.2 W is achieved with a slope efficiency of 42.7%, which is to the best of our knowledge the highest power ever reported from an SCF-based laser in the 2 spectral range. © 2020 The Author(s). Published by Cambridge University Press in association with Chinese Laser Press.