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    Direct Observation of Plasmon Band Formation and Delocalization in Quasi-Infinite Nanoparticle Chains
    (Washington, DC : ACS Publ., 2019) Mayer, Martin; Potapov, Pavel L.; Pohl, Darius; Steiner, Anja Maria; Schultz, Johannes; Rellinghaus, Bernd; Lubk, Axel; König, Tobias A.F.; Fery, Andreas
    Chains of metallic nanoparticles sustain strongly confined surface plasmons with relatively low dielectric losses. To exploit these properties in applications, such as waveguides, the fabrication of long chains of low disorder and a thorough understanding of the plasmon-mode properties, such as dispersion relations, are indispensable. Here, we use a wrinkled template for directed self-assembly to assemble chains of gold nanoparticles. With this up-scalable method, chain lengths from two particles (140 nm) to 20 particles (1500 nm) and beyond can be fabricated. Electron energy-loss spectroscopy supported by boundary element simulations, finite-difference time-domain, and a simplified dipole coupling model reveal the evolution of a band of plasmonic waveguide modes from degenerated single-particle modes in detail. In striking difference from plasmonic rod-like structures, the plasmon band is confined in excitation energy, which allows light manipulations below the diffraction limit. The non-degenerated surface plasmon modes show suppressed radiative losses for efficient energy propagation over a distance of 1500 nm. © 2019 American Chemical Society.
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    Three-Dimensional Composition and Electric Potential Mapping of III–V Core–Multishell Nanowires by Correlative STEM and Holographic Tomography
    (Washington, DC : ACS Publ., 2018-7-13) Wolf, Daniel; Hübner, René; Niermann, Tore; Sturm, Sebastian; Prete, Paola; Lovergine, Nico; Büchner, Bernd; Lubk, Axel
    The nondestructive characterization of nanoscale devices, such as those based on semiconductor nanowires, in terms of functional potentials is crucial for correlating device properties with their morphological/materials features, as well as for precisely tuning and optimizing their growth process. Electron holographic tomography (EHT) has been used in the past to reconstruct the total potential distribution in three-dimension but hitherto lacked a quantitative approach to separate potential variations due to chemical composition changes (mean inner potential, MIP) and space charges. In this Letter, we combine and correlate EHT and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) tomography on an individual ⟨111⟩ oriented GaAs–AlGaAs core–multishell nanowire (NW). We obtain excellent agreement between both methods in terms of the determined Al concentration within the AlGaAs shell, as well as thickness variations of the few nanometer thin GaAs shell acting as quantum well tube. Subtracting the MIP determined from the STEM tomogram, enables us to observe functional potentials at the NW surfaces and at the Au–NW interface, both ascribed to surface/interface pinning of the semiconductor Fermi level.