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Author: Mai, Christian × Subject: silicon photonics ×

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    A physical origin of cross-polarization and higher-order modes in two-dimensional (2D) grating couplers and the related device performance limitations
    (Bristol : IOP Publishing, 2021) Georgieva, Galina; Voigt, Karsten; Seiler, Pascal M.; Mai, Christian; Petermann, Klaus; Zimmermann, Lars
    We explore scattering effects as the physical origin of cross-polarization and higher-order modes in silicon photonic 2D grating couplers (GCs). A simplified analytical model is used to illustrate that in-plane scattering always takes place, independent of grating geometry and design coupling angle. Experimental investigations show furthermore that grating design parameters are especially related to the modal composition of both the target- and the cross-polarization. Scattering effects and the associated cross-polarization and higher-order modes are indicated as the main reason for the higher 2D GC insertion loss compared to standard 1D GCs. In addition, they can be responsible for a variable 2D GC spectrum shape, bandwidth and polarization dependent loss.
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    CMOS-Compatible Silicon Photonic Sensor for Refractive Index Sensing Using Local Back-Side Release
    (New York, NY : IEEE, 2020) Steglich, Patrick; Bondarenko, Siegfried; Mai, Christian; Paul, Martin; Weller, Michael G.; Mai, Andreas
    Silicon photonic sensors are promising candidates for lab-on-a-chip solutions with versatile applications and scalable production prospects using complementary metal-oxide semiconductor (CMOS) fabrication methods. However, the widespread use has been hindered because the sensing area adjoins optical and electrical components making packaging and sensor handling challenging. In this work, a local back-side release of the photonic sensor is employed, enabling a separation of the sensing area from the rest of the chip. This approach allows preserving the compatibility of photonic integrated circuits in the front-end of line and metal interconnects in the back-end of line. The sensor is based on a micro-ring resonator and is fabricated on wafer-level using a CMOS technology. We revealed a ring resonator sensitivity for homogeneous sensing of 106 nm/RIU. © 1989-2012 IEEE.