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Synthesis and Self-Assembly Behavior of Double Ullazine-Based Polycyclic Aromatic Hydrocarbons

2021, Richter, Marcus, Borkowski, Michał, Fu, Yubin, Dmitrieva, Evgenia, Popov, Alexey A., Ma, Ji, Marszalek, Tomasz, Pisula, Wojciech, Feng, Xinliang

Polycyclic aromatic azomethine ylides (PAMY, 1) are versatile building blocks for the bottom-up synthesis of nitrogen-containing polycyclic aromatic hydrocarbons (N-PAHs). Although the chemistry of PAMY was already established few years ago, the cycloaddition of a double PAMY building block has not been reported so far. In this work, we demonstrate the first cycloaddition of a PAMY-dimer (6), which opens the access to three different alkyl ester-substituted N-PAHs with a laterally extended double ullazine scaffold (DU-1, DU-2 and DU-3). Interestingly, the cyclic voltammetry of DU-1-3 exhibited three reversible oxidation waves, which confirmed the electron-rich nature of the double ullazine scaffold. Furthermore, in-situ spectroelectrochemistry study of ethylhexyl ester-substituted DU-3 revealed the formation of different cationic species with new absorption bands up to 1689 nm. Additionally, the influence of the attached substituents on the film formation and supramolecular organization in the thin films were investigated by polarized optical microscopy and grazing incidence wide-angle X-ray scattering.

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Switching from electron to hole transport in solution-processed organic blend field-effect transistors

2020, Fidyk, Julia, Waliszewski, Witold, Sleczkowski, Piotr, Kiersnowski, Adam, Pisula, Wojciech, Marszalek, Tomasz

Organic electronics became an attractive alternative for practical applications in complementary logic circuits due to the unique features of organic semiconductors such as solution processability and ease of large-area manufacturing. Bulk heterojunctions (BHJ), consisting of a blend of two organic semiconductors of different electronic affinities, allow fabrication of a broad range of devices such as light-emitting transistors, light-emitting diodes, photovoltaics, photodetectors, ambipolar transistors and sensors. In this work, the charge carrier transport of BHJ films in field-effect transistors is switched from electron to hole domination upon processing and post-treatment. Low molecular weight n-type N,N′-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI8-CN2) was blended with p-type poly[2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene] (PBTTT-C14) and deposited by spin-coating to form BHJ films. Systematic investigation of the role of rotation speed, solution temperature, and thermal annealing on thin film morphology was performed using atomic force microscopy, scanning electron microscopy, and grazing incidence wide-angle X-ray scattering. It has been determined that upon thermal annealing the BHJ morphology is modified from small interconnected PDI8-CN2 crystals uniformly distributed in the polymer fraction to large planar PDI8-CN2 crystal domains on top of the blend film, leading to the switch from electron to hole transport in field-effect transistors.