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- ItemAnalysis of electronic properties frommagnetotransport measurements on Ba(Fe1-xNix)2As2 thin films(Basel : MDPI AG, 2020) Shipulin, I.; Richter, S.; Thomas, A.A.; Nielsch, K.; Hühne, R.; Martovitsky, V.We performed a detailed structural, magnetotransport, and superconducting analysis of thin epitaxial Ba(Fe1-xNix)2As2 films with Ni doping of x = 0.05 and 0.08, as prepared by pulsed laser deposition. X-ray diffraction studies demonstrate the high crystalline perfection of the films, which have a similar quality to single crystals. Furthermore, magnetotransport measurements of the films were performed in magnetic fields up to 9 T. The results we used to estimate the density of electronic states at the Fermi level, the coefficient of electronic heat capacity, and other electronic parameters for this compound, in their dependence on the dopant concentration within the framework of the Ginzburg-Landau-Abrikosov-Gorkov theory. The comparison of the determined parameters with measurement data on comparable Ba(Fe1-xNix)2As2 single crystals shows good agreement, which confirms the high quality of the obtained films.
- ItemUniversal scaling behavior of the upper critical field in strained FeSe0.7Te0.3 thin films(Bristol : Institute of Physics Publishing, 2018) Yuan, F.; Grinenko, V.; Iida, K.; Richter, S.; Pukenas, A.; Skrotzki, W.; Sakoda, M.; Naito, M.; Sala, A.; Putti, M.; Yamashita, A.; Takano, Y.; Shi, Z.; Nielsch, K.; Hühne, R.Revealing the universal behaviors of iron-based superconductors (FBS) is important to elucidate the microscopic theory of superconductivity. In this work, we investigate the effect of in-plane strain on the slope of the upper critical field H c2 at the superconducting transition temperature T c (i.e. -dH c2/dT) for FeSe0.7Te0.3 thin films. The in-plane strain tunes T c in a broad range, while the composition and disorder are almost unchanged. We show that -dH c2/dT scales linearly with T c, indicating that FeSe0.7Te0.3 follows the same universal behavior as observed for pnictide FBS. The observed behavior is consistent with a multiband superconductivity paired by interband interaction such as sign change s ± superconductivity.
- ItemThickness dependence of the anomalous Nernst effect and the Mott relation of Weyl semimetal Co2MnGa thin films(College Park, MD : American Physical Society, 2020) Park, G.-H.; Reichlova, H.; Schlitz, R.; Lammel, M.; Markou, A.; Swekis, P.; Ritzinger, P.; Kriegner, D.; Noky, J.; Gayles, J.; Sun, Y.; Felser, C.; Nielsch, K.; Goennenwein, S.T.B.; Thomas, A.We report a robust anomalous Nernst effect in Co2MnGa thin films in the thickness regime between 20 and 50 nm. The anomalous Nernst coefficient varied in the range of -2.0 to -3.0 μV/K at 300 K. We demonstrate that the anomalous Hall and Nernst coefficients exhibit similar behavior and fulfill the Mott relation. We simultaneously measure all four transport coefficients of the longitudinal resistivity, transversal resistivity, Seebeck coefficient, and anomalous Nernst coefficient. We connect the values of the measured and calculated Nernst conductivity by using the remaining three magnetothermal transport coefficients, where the Mott relation is still valid. The intrinsic Berry curvature dominates the transport due to the relation between the longitudinal and transversal transport. Therefore, we conclude that the Mott relationship is applicable to describe the magnetothermoelectric transport in Weyl semimetal Co2MnGa as a function of film thickness.
- ItemEntropy of conduction electrons from transport experiments(Basel : MDPI AG, 2020) Pérez, N.; Wolf, C.; Kunzmann, A.; Freudenberger, J.; Krautz, M.; Weise, B.; Nielsch, K.; Schierning, G.The entropy of conduction electrons was evaluated utilizing the thermodynamic definition of the Seebeck coefficient as a tool. This analysis was applied to two dierent kinds of scientific questions that can-if at all-be only partially addressed by other methods. These are the field-dependence of meta-magnetic phase transitions and the electronic structure in strongly disordered materials, such as alloys. We showed that the electronic entropy change in meta-magnetic transitions is not constant with the applied magnetic field, as is usually assumed. Furthermore, we traced the evolution of the electronic entropy with respect to the chemical composition of an alloy series. Insights about the strength and kind of interactions appearing in the exemplary materials can be identified in the experiments.
- ItemModulations in martensitic Heusler alloys originate from nanotwin ordering(London : Nature Publishing Group, 2018) Gruner, M.E.; Niemann, R.; Entel, P.; Pentcheva, R.; Rößler, U.K.; Nielsch, K.; Fähler, S.Heusler alloys exhibiting magnetic and martensitic transitions enable applications like magnetocaloric refrigeration and actuation based on the magnetic shape memory effect. Their outstanding functional properties depend on low hysteresis losses and low actuation fields. These are only achieved if the atomic positions deviate from a tetragonal lattice by periodic displacements. The origin of the so-called modulated structures is the subject of much controversy: They are either explained by phonon softening or adaptive nanotwinning. Here we used large-scale density functional theory calculations on the Ni2MnGa prototype system to demonstrate interaction energy between twin boundaries. Minimizing the interaction energy resulted in the experimentally observed ordered modulations at the atomic scale, it explained that a/b twin boundaries are stacking faults at the mesoscale, and contributed to the macroscopic hysteresis losses. Furthermore, we found that phonon softening paves the transformation path towards the nanotwinned martensite state. This unified both opposing concepts to explain modulated martensite.
- ItemThermoelectric properties of silicon and recycled silicon sawing waste(Peking : Chinese Ceramic Society, 2019) He, R.; Heyn, W.; Thiel, F.; Pérez, N.; Damm, C.; Pohl, D.; Rellinghaus, B.; Reimann, C.; Beier, M.; Friedrich, J.; Zhu, H.; Ren, Z.; Nielsch, K.; Schierning, G.Large-scale-applicable thermoelectric materials should be both self-sustaining, in order to survive long-term duty cycles, and nonpolluting. Among all classes of known thermoelectric materials, these criteria reduce the available candidate pool, leaving silicon as one of the remaining options. Here we first review the thermoelectric properties of various silicon-related materials with respect to their morphologies and microstructures. We then report the thermoelectric properties of silicon sawing wastes recycled from silicon wafer manufacturing. We obtain a high power factor of ∼32 μW cm−1 K−2 at 1273 K with 6% phosphorus substitution in the Si crystal, a value comparable to that of phosphorus-doped silicon-germanium alloys. Our work suggests the large-scale thermoelectric applicability of recycled silicon that would otherwise contribute to the millions of tons of industrial waste produced by the semiconductor industry.
- ItemUltrahigh Power Factor in Thermoelectric System Nb0.95M0.05FeSb (M = Hf, Zr, and Ti)(Chichester : John Wiley and Sons Ltd, 2018) Ren, W.; Zhu, H.; Zhu, Q.; Saparamadu, U.; He, R.; Liu, Z.; Mao, J.; Wang, C.; Nielsch, K.; Wang, Z.; Ren, Z.Conversion efficiency and output power are crucial parameters for thermoelectric power generation that highly rely on figure of merit ZT and power factor (PF), respectively. Therefore, the synergistic optimization of electrical and thermal properties is imperative instead of optimizing just ZT by thermal conductivity reduction or just PF by electron transport enhancement. Here, it is demonstrated that Nb0.95Hf0.05FeSb has not only ultrahigh PF over ≈100 µW cm−1 K−2 at room temperature but also the highest ZT in a material system Nb0.95M0.05FeSb (M = Hf, Zr, Ti). It is found that Hf dopant is capable to simultaneously supply carriers for mobility optimization and introduce atomic disorder for reducing lattice thermal conductivity. As a result, Nb0.95Hf0.05FeSb distinguishes itself from other outstanding NbFeSb-based materials in both the PF and ZT. Additionally, a large output power density of ≈21.6 W cm−2 is achieved based on a single-leg device under a temperature difference of ≈560 K, showing the realistic prospect of the ultrahigh PF for power generation.
- ItemTowards uniform electrochemical porosification of bulk HVPE-grown GaN(Pennington, NJ : Electrochemical Society Inc., 2019) Monaico, E.; Moise, C.; Mihai, G.; Ursaki, V.V.; Leistner, K.; Tiginyanu, I.M.; Enachescu, M.; Nielsch, K.In this paper, we report on results of a systematic study of porous morphologies obtained using anodization of HVPE-grown crystalline GaN wafers in HNO3, HCl, and NaCl solutions. The anodization-induced nanostructuring is found to proceed in different ways on N-and Ga-faces of polar GaN substrates. Complex pyramidal structures are disclosed and shown to be composed of regions with the degree of porosity modulated along the pyramid surface. Depending on the electrolyte and applied anodization voltage, formation of arrays of pores or nanowires has been evidenced near the N-face of the wafer. By adjusting the anodization voltage, we demonstrate that both current-line oriented pores and crystallographic pores are generated. In contrast to this, porosification of the Ga-face proceeds from some imperfections on the surface and develops in depth up to 50 μm, producing porous matrices with pores oriented perpendicularly to the wafer surface, the thickness of the pore walls being controlled by the applied voltage. The observed peculiarities are explained by different values of the electrical conductivity of the material near the two wafer surfaces.
- ItemDiscovery of ZrCoBi based half Heuslers with high thermoelectric conversion efficiency(London : Nature Publishing Group, 2018) Zhu, H.; He, R.; Mao, J.; Zhu, Q.; Li, C.; Sun, J.; Ren, W.; Wang, Y.; Liu, Z.; Tang, Z.; Sotnikov, A.; Wang, Z.; Broido, D.; Singh, D.J.; Chen, G.; Nielsch, K.; Ren, Z.Thermoelectric materials are capable of converting waste heat into electricity. The dimensionless figure-of-merit (ZT), as the critical measure for the material's thermoelectric performance, plays a decisive role in the energy conversion efficiency. Half-Heusler materials, as one of the most promising candidates for thermoelectric power generation, have relatively low ZTs compared to other material systems. Here we report the discovery of p-type ZrCoBi-based half-Heuslers with a record-high ZT of ∼1.42 at 973 K and a high thermoelectric conversion efficiency of ∼9% at the temperature difference of ∼500 K. Such an outstanding thermoelectric performance originates from its unique band structure offering a high band degeneracy (N v) of 10 in conjunction with a low thermal conductivity benefiting from the low mean sound velocity (v m ∼2800 m s-1). Our work demonstrates that ZrCoBi-based half-Heuslers are promising candidates for high-temperature thermoelectric power generation.
- ItemThe Influence of Cu-Additions on the Microstructure, Mechanical and Magnetic Properties of MnAl-C Alloys(London : Nature Publishing Group, 2020) Jürries, F.; Freudenberger, J.; Nielsch, K.; Woodcock, T.G.Alloys of the form (Mn54Al44C2)100-xCux (with x = 0, 1, 2, 4 and 6) were produced by induction melting. After homogenisation and quenching, most of the alloys consist entirely of the retained ε-phase, except for x = 6, in which the κ-phase was additionally present. After subsequent annealing, the alloys with x ≤ 2 consist entirely of a Cu-doped, ferromagnetic τ-phase, whereas the alloys with x > 2 additionally contain the κ-phase. The polarisation of the alloys at an applied field of 14 T decreases with increasing Cu-content, which is attributed i) to the dilution of the magnetic moment of the τ-phase unit cell by the Cu atoms, which do not carry a magnetic moment, and ii) at higher Cu-contents, to the formation of the κ-phase, which has a much lower polarisation than the τ-phase and therefore dilutes the net polarisation of the alloys. The Curie temperature was not affected by the Cu-additions. The stress needed to die-upset the alloys with x ≤ 2 was similar to that of the undoped alloy, whereas it was much lower for x = 4 and 6, due to the presence of intergranular layers of the κ-phase. The extrinsic magnetic properties of alloys with x ≤ 2 were improved by die-upsetting, whereas decomposition of the τ-phase during processing had a deleterious effect on the magnetic properties for higher Cu-additions.