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Author: Nielsch, Kornelius × End date: 2024 × Start date: 2020 × Publisher: Melville, NY : American Inst. of Physics ×

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    Magneto-thermal transport indicating enhanced Nernst response in FeCo/IrMn exchange coupled stacks
    (Melville, NY : American Inst. of Physics, 2022) Martini, Mickey; Reichlova, Helena; Lee, Yejin; Dusíková, Dominika; Zemen, Jan; Nielsch, Kornelius; Thomas, Andy
    We present an analysis of magneto-thermal transport data in IrMn/FeCo bilayers based on the Mott relation and report an enhancement of the Nernst response in the vicinity of the blocking temperature. We measure all four transport coefficients of the longitudinal resistivity, anomalous Hall resistivity, Seebeck effect, and anomalous Nernst effect, and we show a deviation arising around the blocking temperature between the measured Nernst coefficient and the one calculated using the Mott rule. We attribute this discrepancy to spin fluctuations at the antiferromagnet/ferromagnet interface near the blocking temperature. The latter is estimated by magnetometry and magneto-transport measurements.
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    Encapsulation of locally welded silver nanowire with water-free ALD-SbOx for flexible thin-film transistors
    (Melville, NY : American Inst. of Physics, 2022) Yang, Jun; Bahrami, Amin; Ding, Xingwei; Lehmann, Sebastian; Nielsch, Kornelius
    Transparent conductive electrodes are essential in the application of flexible electronics. In this work, we successfully demonstrated a novel strategy for improving mechanical/electrical properties of indium tin oxide (ITO)-free flexible silver nanowire (Ag NW) thin films. To reduce the contact resistance of Ag NWs, an ethanol-mist was used to weld the cross junction of wires at room temperature. The nano-welded Ag NWs (W-Ag NWs) were then coated with an aluminum-doped ZnO (AZO) solution, which significantly reduce the roughness of the Ag NW thin film. Finally, an ultrathin SbOx thin film of 2 nm was deposited on the film surface using a water-free low-temperature atomic layer deposition technique to protect the W-Ag NW/AZO layer from water or oxygen degradation. The treated Ag NWs have a high transmittance of 87% and a low sheet resistance of about 15 ω/sq, which is comparable with the ITO electrode's property. After 1000 cycles of bending testing, the W-Ag NW/AZO/SbOx film practically retains its initial conductivity. Furthermore, the samples were immersed in a solution with pH values ranging from 3 to 13 for 5 min. When compared to untreated Ag NWs or those coated with AlOx thin films, W-Ag NW/AZO/SbOx had superior electrical stability. The W-Ag NW/AZO/SbOxlayer was integrated as a gate electrode on low-power operating flexible Ti-ZnO thin film transistors (TFTs). The 5% Ti-ZnO TFT has a field-effect mobility of 19.7 cm2 V s-1, an Ion/Ioff ratio of 107, and a subthreshold swing of 147 mV decade-1.