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Author: Nielsch, Kornelius × Start date: 2010 × DDC: 540 × DDC: 620 ×

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Now showing 1 - 4 of 4
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    Building Hierarchical Martensite
    (Weinheim : Wiley-VCH, 2020) Schwabe, Stefan; Niemann, Robert; Backen, Anja; Wolf, Daniel; Damm, Christine; Walter, Tina; Seiner, Hanuš; Heczko, Oleg; Nielsch, Kornelius; Fähler, Sebastian
    Martensitic materials show a complex, hierarchical microstructure containing structural domains separated by various types of twin boundaries. Several concepts exist to describe this microstructure on each length scale, however, there is no comprehensive approach bridging the whole range from the nano- up to the macroscopic scale. Here, it is described for a Ni-Mn-based Heusler alloy how this hierarchical microstructure is built from scratch with just one key parameter: the tetragonal distortion of the basic building block at the atomic level. Based on this initial block, five successive levels of nested building blocks are introduced. At each level, a larger building block is formed by twinning the preceding one to minimize the relevant energy contributions locally. This naturally explains the coexistence of different types of twin boundaries. The scale-bridging approach of nested building blocks is compared with experiments in real and reciprocal space. The approach of nested building blocks is versatile as it can be applied to the broad class of functional materials exhibiting diffusionless transformations. © 2020 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH
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    Control of Positive and Negative Magnetoresistance in Iron Oxide : Iron Nanocomposite Thin Films for Tunable Magnetoelectric Nanodevices
    (2020) Nichterwitz, Martin; Honnali, Shashank; Zehner, Jonas; Schneider, Sebastian; Pohl, Darius; Schiemenz, Sandra; Goennenwein, Sebastian T.B.; Nielsch, Kornelius; Leistner, Karin
    The perspective of energy-efficient and tunable functional magnetic nanostructures has triggered research efforts in the fields of voltage control of magnetism and spintronics. We investigate the magnetotransport properties of nanocomposite iron oxide/iron thin films with a nominal iron thickness of 5-50 nm and find a positive magnetoresistance at small thicknesses. The highest magnetoresistance was found for 30 nm Fe with +1.1% at 3 T. This anomalous behavior is attributed to the presence of Fe3O4-Fe nanocomposite regions due to grain boundary oxidation. At the Fe3O4/Fe interfaces, spin-polarized electrons in the magnetite can be scattered and reoriented. A crossover to negative magnetoresistance (-0.11%) is achieved at a larger thickness (>40 nm) when interface scattering effects become negligible as more current flows through the iron layer. Electrolytic gating of this system induces voltage-triggered redox reactions in the Fe3O4 regions and thereby enables voltage-tuning of the magnetoresistance with the locally oxidized regions as the active tuning elements. In the low-magnetic-field region (<1 T), a crossover from positive to negative magnetoresistance is achieved by a voltage change of only 1.72 V. At 3 T, a relative change of magnetoresistance about -45% during reduction was achieved for the 30 nm Fe sample. The present low-voltage approach signifies a step forward to practical and tunable room-temperature magnetoresistance-based nanodevices, which can boost the development of nanoscale and energy-efficient magnetic field sensors with high sensitivity, magnetic memories, and magnetoelectric devices in general. Copyright © 2020 American Chemical Society.
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    Phase Selection in Mn–Si Alloys by Fast Solid-State Reaction with Enhanced Skyrmion Stability
    (Weinheim : Wiley-VCH, 2021) Li, Zichao; Xie, Yufang; Yuan, Ye; Ji, Yanda; Begeza, Viktor; Cao, Lei; Hübner, René; Rebohle, Lars; Helm, Manfred; Nielsch, Kornelius; Prucnal, Slawomir; Zhou, Shengqiang
    B20-type transition-metal silicides or germanides are noncentrosymmetric materials hosting magnetic skyrmions, which are promising information carriers in spintronic devices. The prerequisite is to prepare thin films on technology-relevant substrates with magnetic skyrmions stabilized at a broad temperature and magnetic-field working window. A canonical example is the B20-MnSi film grown on Si substrates. However, the as-yet unavoidable contamination with MnSi1.7 occurs due to the lower nucleation temperature of this phase. In this work, a simple and efficient method to overcome this problem and prepare single-phase MnSi films on Si substrates is reported. It is based on the millisecond reaction between metallic Mn and Si using flash-lamp annealing (FLA). By controlling the FLA energy density, single-phase MnSi or MnSi1.7 or their mixture can be grown at will. Compared with bulk MnSi, the prepared MnSi films show an increased Curie temperature of up to 41 K. In particular, the magnetic skyrmions are stable over a much wider temperature and magnetic-field range than reported previously. The results constitute a novel phase selection approach for alloys and can help to enhance specific functional properties, such as the stability of magnetic skyrmions. © 2021 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH
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    Electrochemical nanostructuring of (111) oriented GaAs crystals: From porous structures to nanowires
    (Frankfurt, M. : Beilstein-Institut zur Förderung der Chemischen Wissenschaften, 2020) Monaico, Elena I.; Monaico, Eduard V.; Ursaki, Veaceslav V.; Honnali, Shashank; Postolache, Vitalie; Leistner, Karin; Nielsch, Kornelius; Tiginyanu, Ion M.
    A comparative study of the anodization processes occurring at the GaAs(111)A and GaAs(111)B surfaces exposed to electrochemical etching in neutral NaCl and acidic HNO3 aqueous electrolytes is performed in galvanostatic and potentiostatic anodization modes. Anodization in NaCl electrolytes was found to result in the formation of porous structures with porosity controlled either by current under the galvanostatic anodization, or by the potential under the potentiostatic anodization. Possibilities to produce multilayer porous structures are demonstrated. At the same time, one-step anodization in a HNO3 electrolyte is shown to lead to the formation of GaAs triangular shape nanowires with high aspect ratio (400 nm in diameter and 100 μm in length). The new data are compared to those previously obtained through anodizing GaAs(100) wafers in alkaline KOH electrolyte. An IR photodetector based on the GaAs nanowires is demonstrated. © 2020 Monaico et al.