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Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy
2019, Niu, Gang, Calka, Pauline, Huang, Peng, Sharath, Sankaramangalam Ulhas, Petzold, Stefan, Gloskovskii, Andrei, Fröhlich, Karol, Zhao, Yudi, Kan, Jinfeng, Schubert, Markus Andreas, Bärwolf, Florian, Ren, Wei, Ye, Zuo-Guang, Perez, Eduardo, Wenger, Christian, Alff, Lambert, Schroeder, Thomas
The HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the microscopic physical nature of the resistive switching (RS) behavior. By using synchrotron radiation based, non-destructive and bulk-sensitive hard X-ray photoelectron spectroscopy (HAXPES), we demonstrate an operando diagnostic detection of the oxygen ‘breathing’ behavior at the oxide/metal interface, namely, oxygen migration between HfO2 and TiN during different RS periods. The results highlight the significance of oxide/metal interfaces in RRAM, even in filament-type devices. IMPACT STATEMENT: The oxygen ‘breathing’ behavior at the oxide/metal interface of filament-type resistive random access memory devices is operandoly detected using hard X-ray photoelectron spectroscopy as a diagnostic tool. © 2019, © 2019 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group.
Correction: Interface-engineered reliable HfO2-based RRAM for synaptic simulation (Journal of Materials Chemistry C (2019) DOI: 10.1039/c9tc04880d)
2019, Wang, Qiang, Niu, Gang, Roy, Sourav, Wang, Yankun, Zhang, Yijun, Wu, Heping, Zhai, Shijie, Bai, Wei, Shi, Peng, Song, Sannian, Song, Zhitang, Xie, Ya-Hong, Ye, Zuo-Guang, Wenger, Christian, Meng, Xiangjian, Ren, Wei
There was an error in the author list of this published article. The corresponding authors for this paper are Gang Niu (gangniu@xjtu.edu.cn) and Wei Ren (wren@mail.xjtu.edu.cn). The footnote indicating that Qiang Wang and Gang Niu contributed equally to the work was not intended. The corrected author list and notations are shown here. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers. © The Royal Society of Chemistry 2019.