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    Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)
    (Milton Park : Taylor & Francis, 2013) Fromm, F.; Oliveira Jr, M.H.; Molina-Sánchez, A.; Hundhausen, M.; Lopes, J.M.J.; Riechert, H.; Wirtz, L.; Seyller, T.
    We report a Raman study of the so-called buffer layer with (6 3 x 6 3)R30 periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a non-vanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab initio phonon calculations reveal that these features can be attributed to the vibrational density of states of the buffer layer.