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- ItemTestbeam results of the Picosecond Avalanche Detector proof-of-concept prototype(London : Inst. of Physics, 2022) Iacobucci, G.; Zambito, S.; Milanesio, M.; Moretti, T.; Saidi, J.; Paolozzi, L.; Munker, M.; Cardella, R.; Martinelli, F.; Picardi, A.; Rücker, H.; Trusch, A.; Valerio, P.; Cadoux, F.; Cardarelli, R.; Débieux, S.; Favre, Y.; Fenoglio, C.A.; Ferrere, D.; Gonzalez-Sevilla, S.; Gurimskaya, Y.; Kotitsa, R.; Magliocca, C.; Nessi, M.; Pizarro-Medina, A.; Sabater Iglesias, J.; Vicente Barreto Pinto, M.The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend electronics and hexagonal pixels with 100 μm pitch. At a sensor bias voltage of 125 V, the detector provides full efficiency and average time resolution of 30, 25 and 17 ps in the overall pixel area for a power consumption of 0.4, 0.9 and 2.7 W/cm2, respectively. In this first prototype the time resolution depends significantly on the distance from the center of the pixel, varying at the highest power consumption measured between 13 ps at the center of the pixel and 25 ps in the inter-pixel region.
- ItemA 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology(London : Inst. of Physics, 2019) Iacobucci, G.; Cardarelli, R.; Débieux, S.; Di Bello, F.A.; Favre, Y.; Hayakawa, D.; Kaynak, M.; Nessi, M.; Paolozzi, L.; Rücker, H.; Sultan, D.M.S.; Valerio, P.A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP. This proof-of-concept chip contains hexagonal pixels of 65 µm and 130 µm side. The SiGe front-end electronics implemented provides an equivalent noise charge of 90 and 160 e- for a pixel capacitance of 70 and 220 fF, respectively, and a total time walk of less than 1 ns. Lab measurements with a 90Sr source show a time resolution of the order of 50 ps. This result is competitive with silicon technologies that integrate an avalanche gain mechanism. © 2019 CERN.