2021, Konyk, M., Romaka, L., Stadnyk, Yu., Romaka, V.V., Pashkevych, V.

The isothermal section of the phase diagram of the Gd–Cr–Ge ternary system was constructed at 1070 K over the whole concentration range using X-ray diffractometry, metallography and electron microprobe (EPM) analysis. Three ternary compounds are realized in the Gd–Cr–Ge system at the temperature of annealing: Gd117Cr52Ge112 (Tb117Fe52Ge112 structure type,  space group Fm-3m, Pearson symbol cF1124, a = 2.8971(6) nm), GdCr6Ge6 (SmMn6Sn6 structure type, space group P6/mmm, Pearson symbol hP16, a = 0.51797(2), c = 0.82901(4) nm) and GdCr1-хGe2 (CeNiSi2 structure type, space group Cmcm, Pearson symbol oS16, a = 0.41569(1)-0.41593(8), b = 1.60895(6)-1.60738(3), c = 0.40318(1)-0.40305(8) nm). For the GdCr1-xGe2 compound the homogeneity range was determined (x=0.73 – 0,69).

2023, Romaka, V.V., Romaka, V.A., Stadnyk, Yu., Romaka, L., Horyn, A., Pashkevych, V., Haraniuk, P.

Modeling of the thermodynamic, structural, energetic and magnetic properties of the semiconductor solid solution Lu1-xVxNiSb was carried out under the condition of the presence of a magnetic moment on the V atoms and the occurrence of spontaneous magnetization. It is shown that the change in the unit cell parameter a(x) and the mixing enthalpy ΔHmix(х) depends little on the presence or absence of spontaneous magnetization. Modeling of the distribution of the density of electronic states DOS in the presence of a magnetic moment on V atoms revealed the splitting of energy states with spins up and down while preserving the band gap εg of Lu1-xVxNiSb. The relationship between the concentration of magnetic V atoms in Lu1-xVxNiSb and the Curie temperature ТС, when spontaneous magnetization is destroyed and the substance becomes paramagnetic, is established. The solid solution semiconductor Lu1-xVxNiSb, provided spontaneous magnetization is present, can be considered as a promising magnetocaloric.