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Now showing 1 - 6 of 6
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    Elucidating Structure Formation in Highly Oriented Triple Cation Perovskite Films
    (Weinheim : Wiley-VCH, 2023) Telschow, Oscar; Scheffczyk, Niels; Hinderhofer, Alexander; Merten, Lena; Kneschaurek, Ekaterina; Bertram, Florian; Zhou, Qi; Löffler, Markus; Schreiber, Frank; Paulus, Fabian; Vaynzof, Yana
    Metal halide perovskites are an emerging class of crystalline semiconductors of great interest for application in optoelectronics. Their properties are dictated not only by their composition, but also by their crystalline structure and microstructure. While significant efforts are dedicated to the development of strategies for microstructural control, significantly less is known about the processes that govern the formation of their crystalline structure in thin films, in particular in the context of crystalline orientation. This work investigates the formation of highly oriented triple cation perovskite films fabricated by utilizing a range of alcohols as an antisolvent. Examining the film formation by in situ grazing-incidence wide-angle X-ray scattering reveals the presence of a short-lived highly oriented crystalline intermediate, which is identified as FAI-PbI2-xDMSO. The intermediate phase templates the crystallization of the perovskite layer, resulting in highly oriented perovskite layers. The formation of this dimethylsulfoxide (DMSO) containing intermediate is triggered by the selective removal of N,N-dimethylformamide (DMF) when alcohols are used as an antisolvent, consequently leading to differing degrees of orientation depending on the antisolvent properties. Finally, this work demonstrates that photovoltaic devices fabricated from the highly oriented films, are superior to those with a random polycrystalline structure in terms of both performance and stability.
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    Solvent-antisolvent interactions in metal halide perovskites
    (Cambridge : Soc., 2023) Bautista-Quijano, Jose Roberto; Telschow, Oscar; Paulus, Fabian; Vaynzof, Yana
    The fabrication of metal halide perovskite films using the solvent-engineering method is increasingly common. In this method, the crystallisation of the perovskite layer is triggered by the application of an antisolvent during the spin-coating of a perovskite precursor solution. Herein, we introduce the current state of understanding of the processes involved in the crystallisation of perovskite layers formed by solvent engineering, focusing in particular on the role of antisolvent properties and solvent-antisolvent interactions. By considering the impact of the Hansen solubility parameters, we propose guidelines for selecting the appropriate antisolvent and outline open questions and future research directions for the fabrication of perovskite films by this method.
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    Perovskite phase heterojunction solar cells
    (London : Nature Publishing Group, 2022) Ji, Ran; Zhang, Zongbao; Hofstetter, Yvonne J.; Buschbeck, Robin; Hänisch, Christian; Paulus, Fabian; Vaynzof, Yana
    Modern photovoltaic devices are often based on a heterojunction structure where two components with different optoelectronic properties are interfaced. The properties of each side of the junction can be tuned by either utilizing different materials (for example, donor/acceptor) or doping (for example, p–n junction) or even varying their dimensionality (for example, 3D/2D). Here we demonstrate the concept of phase heterojunction (PHJ) solar cells by utilizing two polymorphs of the same material. We demonstrate the approach by forming γ-CsPbI3/β-CsPbI3 perovskite PHJ solar cells. We find that all of the photovoltaic parameters of the PHJ device significantly surpass those of each of the single-phase devices, resulting in a maximum power conversion efficiency of 20.1%. These improvements originate from the efficient passivation of the β-CsPbI3 by the larger bandgap γ-CsPbI3, the increase in the built-in potential of the PHJ devices enabled by the energetic alignment between the two phases and the enhanced absorption of light by the PHJ structure. The approach demonstrated here offers new possibilities for the development of photovoltaic devices based on polymorphic materials.
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    Interdot Lead Halide Excess Management in PbS Quantum Dot Solar Cells
    (Weinheim : Wiley-VCH, 2022) Albaladejo‐Siguan, Miguel; Becker‐Koch, David; Baird, Elizabeth C.; Hofstetter, Yvonne J.; Carwithen, Ben P.; Kirch, Anton; Reineke, Sebastian; Bakulin, Artem A.; Paulus, Fabian; Vaynzof, Yana
    Light-harvesting devices made from lead sulfide quantum dot (QD) absorbers are one of the many promising technologies of third-generation photovoltaics. Their simple, solution-based fabrication, together with a highly tunable and broad light absorption makes their application in newly developed solar cells, particularly promising. In order to yield devices with reduced voltage and current losses, PbS QDs need to have strategically passivated surfaces, most commonly achieved through lead iodide and bromide passivation. The interdot spacing is then predominantly filled with residual amorphous lead halide species that remain from the ligand exchange, thus hindering efficient charge transport and reducing device stability. Herein, it is demonstrated that a post-treatment by iodide-based 2-phenylethlyammonium salts and intermediate 2D perovskite formation can be used to manage the lead halide excess in the PbS QD active layer. This treatment results in improved device performance and increased shelf-life stability, demonstrating the importance of interdot spacing management in PbS QD photovoltaics.
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    Bis(stearoyl) Sulfide: A Stable, Odor-Free Sulfur Precursor for High-Efficiency Metal Sulfide Quantum Dot Photovoltaics
    (Weinheim : Wiley-VCH, 2023) Albaladejo‐Siguan, Miguel; Prudnikau, Anatol; Senina, Alina; Baird, Elizabeth C.; Hofstetter, Yvonne J.; Brunner, Julius; Shi, Juanzi; Vaynzof, Yana; Paulus, Fabian
    The synthesis of metal sulfide nanocrystals is a crucial step in the fabrication of quantum dot (QD) photovoltaics. Control over the QD size during synthesis allows for precise tuning of their optical and electronic properties, making them an appealing choice for electronic applications. This flexibility has led to the implementation of QDs in both highly-efficient single junction solar cells and other optoelectronic devices including photodetectors and transistors. Most commonly, metal sulfide QDs are synthesized using the hot-injection method utilizing a toxic, and air- and moisture-sensitive sulfur source: bis(trimethylsilyl) sulfide ((TMS)2S). Here, bis(stearoyl) sulfide (St2S) is presented as a new type of air-stable sulfur precursor for the synthesis of sulfide-based QDs, which yields uniform, pure, and stable nanocrystals. Photovoltaic devices based on these QDs are equally efficient as those fabricated by (TMS)2S but exhibit enhanced operational stability. These results highlight that St2S can be widely adopted for the synthesis of metal sulfide QDs for a range of optoelectronic applications.
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    Cation exchange synthesis of AgBiS2 quantum dots for highly efficient solar cells
    (Cambridge : RSC Publ., 2024) Senina, Alina; Prudnikau, Anatol; Wrzesińska-Lashkova, Angelika; Vaynzof, Yana; Paulus, Fabian
    Silver bismuth sulfide (AgBiS2) nanocrystals have emerged as a promising eco-friendly, low-cost solar cell absorber material. Their direct synthesis often relies on the hot-injection method, requiring the application of high temperatures and vacuum for prolonged times. Here, we demonstrate an alternative synthetic approach via a cation exchange reaction. In the first-step, bis(stearoyl)sulfide is used as an air-stable sulfur precursor for the synthesis of small, monodisperse Ag2S nanocrystals at room-temperature. In a second step, bismuth cations are incorporated into the nanocrystal lattice to form ternary AgBiS2 nanocrystals, without altering their size and shape. When implemented into photovoltaic devices, AgBiS2 nanocrystals obtained by cation exchange reach power conversion efficiencies of up to 7.35%, demonstrating the efficacy of the new synthetic approach for the formation of high-quality, ternary semiconducting nanocrystals.