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Author: Pietsch, Ullrich × Subject: Nanowires ×

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    X-ray diffraction reveals the amount of strain and homogeneity of extremely bent single nanowires
    (Copenhagen : Munksgaard, 2020) Davtyan, Arman; Kriegner, Dominik; Holý, Václav; AlHassan, Ali; Lewis, Ryan B.; McDermott, Spencer; Geelhaar, Lutz; Bahrami, Danial; Anjum, Taseer; Ren, Zhe; Richter, Carsten; Novikov, Dmitri; Müller, Julian; Butz, Benjamin; Pietsch, Ullrich
    Core-shell nanowires (NWs) with asymmetric shells allow for strain engineering of NW properties because of the bending resulting from the lattice mismatch between core and shell material. The bending of NWs can be readily observed by electron microscopy. Using X-ray diffraction analysis with a micro- and nano-focused beam, the bending radii found by the microscopic investigations are confirmed and the strain in the NW core is analyzed. For that purpose, a kinematical diffraction theory for highly bent crystals is developed. The homogeneity of the bending and strain is studied along the growth axis of the NWs, and it is found that the lower parts, i.e. close to the substrate/wire interface, are bent less than the parts further up. Extreme bending radii down to ∼3 μm resulting in strain variation of ∼2.5% in the NW core are found. © 2020.
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    Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy
    (London : BioMed Central, 2012) Davydok, Anton; Breuer, Steffen; Biermanns, Andreas; Geelhaar, Lutz; Pietsch, Ullrich
    Using out-of-plane and in-plane X-ray diffraction techniques, we have investigated the structure at the interface between GaAs nanowires [NWs] grown by Au-assisted molecular beam epitaxy and the underlying Si(111) substrate. Comparing the diffraction pattern measured at samples grown for 5, 60, and 1,800 s, we find a plastic strain release of about 75% close to the NW-to-substrate interface even at the initial state of growth, probably caused by the formation of a dislocation network at the Si-to-GaAs interface. In detail, we deduce that during the initial stage, zinc-blende structure GaAs islands grow with a gradually increasing lattice parameter over a transition region of several 10 nm in the growth direction. In contrast, accommodation of the in-plane lattice parameter takes place within a thickness of about 10 nm. As a consequence, the ratio between out-of-plane and in-plane lattice parameters is smaller than the unity in the initial state of growth. Finally the wurtzite-type NWs grow on top of the islands and are free of strain.