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- ItemControl of Positive and Negative Magnetoresistance in Iron Oxide : Iron Nanocomposite Thin Films for Tunable Magnetoelectric Nanodevices(2020) Nichterwitz, Martin; Honnali, Shashank; Zehner, Jonas; Schneider, Sebastian; Pohl, Darius; Schiemenz, Sandra; Goennenwein, Sebastian T.B.; Nielsch, Kornelius; Leistner, KarinThe perspective of energy-efficient and tunable functional magnetic nanostructures has triggered research efforts in the fields of voltage control of magnetism and spintronics. We investigate the magnetotransport properties of nanocomposite iron oxide/iron thin films with a nominal iron thickness of 5-50 nm and find a positive magnetoresistance at small thicknesses. The highest magnetoresistance was found for 30 nm Fe with +1.1% at 3 T. This anomalous behavior is attributed to the presence of Fe3O4-Fe nanocomposite regions due to grain boundary oxidation. At the Fe3O4/Fe interfaces, spin-polarized electrons in the magnetite can be scattered and reoriented. A crossover to negative magnetoresistance (-0.11%) is achieved at a larger thickness (>40 nm) when interface scattering effects become negligible as more current flows through the iron layer. Electrolytic gating of this system induces voltage-triggered redox reactions in the Fe3O4 regions and thereby enables voltage-tuning of the magnetoresistance with the locally oxidized regions as the active tuning elements. In the low-magnetic-field region (<1 T), a crossover from positive to negative magnetoresistance is achieved by a voltage change of only 1.72 V. At 3 T, a relative change of magnetoresistance about -45% during reduction was achieved for the 30 nm Fe sample. The present low-voltage approach signifies a step forward to practical and tunable room-temperature magnetoresistance-based nanodevices, which can boost the development of nanoscale and energy-efficient magnetic field sensors with high sensitivity, magnetic memories, and magnetoelectric devices in general. Copyright © 2020 American Chemical Society.
- ItemGraphene-Like ZnO: A Mini Review(Basel : MDPI, 2016) Ta, Huy Q.; Zhao, Liang; Pohl, Darius; Pang, Jinbo; Trzebicka, Barbara; Rellinghaus, Bernd; Pribat, Didier; Gemming, Thomas; Liu, Zhongfan; Bachmatiuk, Alicja; Rümmeli, Mark H.The isolation of a single layer of graphite, known today as graphene, not only demonstrated amazing new properties but also paved the way for a new class of materials often referred to as two-dimensional (2D) materials. Beyond graphene, other 2D materials include h-BN, transition metal dichalcogenides (TMDs), silicene, and germanene, to name a few. All tend to have exciting physical and chemical properties which appear due to dimensionality effects and modulation of their band structure. A more recent member of the 2D family is graphene-like zinc oxide (g-ZnO) which also holds great promise as a future functional material. This review examines current progress in the synthesis and characterization of g-ZnO. In addition, an overview of works dealing with the properties of g-ZnO both in its pristine form and modified forms (e.g., nano-ribbon, doped material, etc.) is presented. Finally, discussions/studies on the potential applications of g-ZnO are reviewed and discussed.
- ItemDirect Observation of Plasmon Band Formation and Delocalization in Quasi-Infinite Nanoparticle Chains(Washington, DC : ACS Publ., 2019) Mayer, Martin; Potapov, Pavel L.; Pohl, Darius; Steiner, Anja Maria; Schultz, Johannes; Rellinghaus, Bernd; Lubk, Axel; König, Tobias A.F.; Fery, AndreasChains of metallic nanoparticles sustain strongly confined surface plasmons with relatively low dielectric losses. To exploit these properties in applications, such as waveguides, the fabrication of long chains of low disorder and a thorough understanding of the plasmon-mode properties, such as dispersion relations, are indispensable. Here, we use a wrinkled template for directed self-assembly to assemble chains of gold nanoparticles. With this up-scalable method, chain lengths from two particles (140 nm) to 20 particles (1500 nm) and beyond can be fabricated. Electron energy-loss spectroscopy supported by boundary element simulations, finite-difference time-domain, and a simplified dipole coupling model reveal the evolution of a band of plasmonic waveguide modes from degenerated single-particle modes in detail. In striking difference from plasmonic rod-like structures, the plasmon band is confined in excitation energy, which allows light manipulations below the diffraction limit. The non-degenerated surface plasmon modes show suppressed radiative losses for efficient energy propagation over a distance of 1500 nm. © 2019 American Chemical Society.
- ItemAnalysis of the Annealing Budget of Metal Oxide Thin-Film Transistors Prepared by an Aqueous Blade-Coating Process(Weinheim : Wiley-VCH, 2022) Tang, Tianyu; Dacha, Preetam; Haase, Katherina; Kreß, Joshua; Hänisch, Christian; Perez, Jonathan; Krupskaya, Yulia; Tahn, Alexander; Pohl, Darius; Schneider, Sebastian; Talnack, Felix; Hambsch, Mike; Reineke, Sebastian; Vaynzof, Yana; Mannsfeld, Stefan C. B.Metal oxide (MO) semiconductors are widely used in electronic devices due to their high optical transmittance and promising electrical performance. This work describes the advancement toward an eco-friendly, streamlined method for preparing thin-film transistors (TFTs) via a pure water-solution blade-coating process with focus on a low thermal budget. Low temperature and rapid annealing of triple-coated indium oxide thin-film transistors (3C-TFTs) and indium oxide/zinc oxide/indium oxide thin-film transistors (IZI-TFTs) on a 300 nm SiO2 gate dielectric at 300 °C for only 60 s yields devices with an average field effect mobility of 10.7 and 13.8 cm2 V−1 s−1, respectively. The devices show an excellent on/off ratio (>106), and a threshold voltage close to 0 V when measured in air. Flexible MO-TFTs on polyimide substrates with AlOx dielectrics fabricated by rapid annealing treatment can achieve a remarkable mobility of over 10 cm2 V−1 s−1 at low operating voltage. When using a longer post-coating annealing period of 20 min, high-performance 3C-TFTs (over 18 cm2 V−1 s−1) and IZI-TFTs (over 38 cm2 V−1 s−1) using MO semiconductor layers annealed at 300 °C are achieved.
- ItemHeterostructured Bismuth Telluride Selenide Nanosheets for Enhanced Thermoelectric Performance(Weinheim : Wiley-VCH GmbH, 2020) Bauer, Christoph; Veremchuk, Igor; Kunze, Christof; Benad, Albrecht; Dzhagan, Volodymyr M.; Haubold, Danny; Pohl, Darius; Schierning, Gabi; Nielsch, Kornelius; Lesnyak, Vladimir; Eychmüller, AlexanderThe n-type semiconductor system Bi2Te3Bi2Se3 is known as a low-temperature thermoelectric material with a potentially high efficiency. Herein, a facile approach is reported to synthesize core/shell heterostructured Bi2Te2Se/Bi2Te3 nanosheets (NSs) with lateral dimensions of 1-3 mu m and thickness of about 50nm. Bi2Te3 and Bi2Se3, as well as heterostructured Bi2Te2Se/Bi2Te3 NSs are obtained via colloidal synthesis. Heterostructured NSs show an inhomogeneous distribution of the chalcogen atoms forming selenium and tellurium-rich layers across the NS thickness, resulting in a core/shell structure. Detailed morphological studies reveal that these structures contain nanosized pores. These features contribute to the overall thermoelectric properties of the material, inducing strong phonon scattering at grain boundaries in compacted solids. NSs are processed into nanostructured bulks through spark plasma sintering of dry powders to form a thermoelectric material with high power factor. Electrical characterization of our materials reveals a strong anisotropic behavior in consolidated pellets. It is further demonstrated that by simple thermal annealing, core/shell structure can be controllably transformed into alloyed one. Using this approach pellets with Bi2Te2.55Se0.45 composition are obtained, which exhibit low thermal conductivity and high power factor for in-plane direction with zT of 1.34 at 400K.
- ItemAtom size electron vortex beams with selectable orbital angular momentum(London : Nature Publishing Group, 2017) Pohl, Darius; Schneider, Sebastian; Zeiger, Paul; Rusz, Ján; Tiemeijer, Peter; Lazar, Sorin; Nielsch, Kornelius; Rellinghaus, BerndThe decreasing size of modern functional magnetic materials and devices cause a steadily increasing demand for high resolution quantitative magnetic characterization. Transmission electron microscopy (TEM) based measurements of the electron energy-loss magnetic chiral dichroism (EMCD) may serve as the needed experimental tool. To this end, we present a reliable and robust electron-optical setup that generates and controls user-selectable single state electron vortex beams with defined orbital angular momenta. Our set-up is based on a standard high-resolution scanning TEM with probe aberration corrector, to which we added a vortex generating fork aperture and a miniaturized aperture for vortex selection. We demonstrate that atom size probes can be formed from these electron vortices and that they can be used for atomic resolution structural and spectroscopic imaging – both of which are prerequisites for future atomic EMCD investigations.
- ItemProbing magnetic properties at the nanoscale: in-situ Hall measurements in a TEM([London] : Macmillan Publishers Limited, 2023) Pohl, Darius; Lee, Yejin; Kriegner, Dominik; Beckert, Sebastian; Schneider, Sebastian; Rellinghaus, Bernd; Thomas, AndyWe report on advanced in-situ magneto-transport measurements in a transmission electron microscope. The approach allows for concurrent magnetic imaging and high resolution structural and chemical characterization of the same sample. Proof-of-principle in-situ Hall measurements on presumably undemanding nickel thin films supported by micromagnetic simulations reveal that in samples with non-trivial structures and/or compositions, detailed knowledge of the latter is indispensable for a thorough understanding and reliable interpretation of the magneto-transport data. The proposed in-situ approach is thus expected to contribute to a better understanding of the Hall signatures in more complex magnetic textures.