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Self-Assembled Graphene/MWCNT Bilayers as Platinum- Free Counter Electrode in Dye-Sensitized Solar Cells

2019, Wahyuono, Ruri Agung, Jia, Guobin, Plentz, Jonathan, Dellith, Andrea, Dellith, Jan, Herrmann-Westendorf, Felix, Seyring, Martin, Presselt, Martin, Andrä, Gudrun, Rettenmayr, Markus, Dietzek, Benjamin

We describe the preparation and properties of bilayers of graphene- and multi-walled carbon nanotubes (MWCNTs) as an alternative to conventionally used platinum-based counter electrode for dye-sensitized solar cells (DSSC). The counter electrodes were prepared by a simple and easy-to-implement double self-assembly process. The preparation allows for controlling the surface roughness of electrode in a layer-by-layer deposition. Annealing under N2 atmosphere improves the electrode's conductivity and the catalytic activity of graphene and MWCNTs to reduce the I3 − species within the electrolyte of the DSSC. The performance of different counter-electrodes is compared for ZnO photoanode-based DSSCs. Bilayer electrodes show higher power conversion efficiencies than monolayer graphene electrodes or monolayer MWCNTs electrodes. The bilayer graphene (bottom)/MWCNTs (top) counter electrode-based DSSC exhibits a maximum power conversion efficiency of 4.1 % exceeding the efficiency of a reference DSSC with a thin film platinum counter electrode (efficiency of 3.4 %). In addition, the double self-assembled counter electrodes are mechanically stable, which enables their recycling for DSSCs fabrication without significant loss of the solar cell performance. © 2019 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

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XPS investigations of MOCVD tin oxide thin layers on Si nanowires array

2018, Turishchev, S.Yu., Chuvenkova, Olga, Parinova, V.E., Koyuda, D.A., Chumakov, Ratibor G., Presselt, Martin, Schleusener, Alexander, Sivakov, Vladimir

Tin oxide thin layers were grown by metal-organic chemical vapor deposition technique on the top-down nanostructured silicon nanowires array obtained by metal-assisted wet-chemical technique from single crystalline silicon wafers. The composition of the formed layers were studied by high-resolution X-ray photoelectron spectroscopy of tin (Sn 3d) and oxygen (O 1 s) atoms core levels. The ion beam etching was applied to study the layers depth composition profiles. The composition studies of grown tin oxide layers is shown that the surface of layers contains tin dioxide, but the deeper part contains intermediate tin dioxide and metallic tin phases.