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Author: Radziunas, Mindaugas × End date: 2022 × Start date: 2020 × End date: 2019 × Start date: 2010 × Publisher: Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik × Subject: traveling-wave model ×

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    Time-dependent simulation of thermal lensing in high-power broad-area semiconductor lasers
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Zeghuzi, Anissa; Wünsche, Hans-Jürgen; Wenzel, Hans; Radziunas, Mindaugas; Fuhrmann, Jürgen; Klehr, Andreas; Bandelow, Uwe; Knigge, Andrea
    We propose a physically realistic and yet numerically applicable thermal model to account for short and long term self-heating within broad-area lasers. Although the temperature increase is small under pulsed operation, a waveguide that is formed within a few-ns-long pulse can result in a transition from a gain-guided to an index-guided structure, leading to near and far field narrowing. Under continuous wave operation the longitudinally varying temperature profile is obtained self-consistently. The resulting unfavorable narrowing of the near field can be successfully counteracted by etching trenches.
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    Simulation and design of a compact GaAs based tunable dual-wavelength diode laser system
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Koester, Jan-Philipp; Radziunas, Mindaugas; Zeghuzi, Anissa; Wenzel, Hans; Knigge, Andrea
    We present our design of a compact, integrated and tunable dual-wavelength diode laser system emitting around 785 nm, which is of interest for several applications like Raman spectroscopy and the generation of THz radiation. To achieve a more compact device compared to previous GaAs based designs two etch depths are realized, leading to shallowly etched ridge waveguides in regions were optical gain is applied and deeply etched waveguides used to enable compact integrated waveguide components. The device parameters are optimized using a numerically efficient simulation tool for passive waveguides. Subsequently, the entire laser system is further analyzed applying a sophisticated traveling-wave equation based model for active devices giving access to internal intensity and carrier density distributions. It is shown that active laser simulations are crucial to deduce critical and performance limiting design aspects not accessible via an all-passive simulation.