Filters

20195

More filters

20225
Reset filters

Settings

Author: Radziunas, Mindaugas × End date: 2022 × Start date: 2020 × End date: 2019 × Start date: 2010 × Publisher: Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik ×

Search Results

Now showing 1 - 5 of 5
  • Thumbnail Image
    Item
    Time-dependent simulation of thermal lensing in high-power broad-area semiconductor lasers
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Zeghuzi, Anissa; Wünsche, Hans-Jürgen; Wenzel, Hans; Radziunas, Mindaugas; Fuhrmann, Jürgen; Klehr, Andreas; Bandelow, Uwe; Knigge, Andrea
    We propose a physically realistic and yet numerically applicable thermal model to account for short and long term self-heating within broad-area lasers. Although the temperature increase is small under pulsed operation, a waveguide that is formed within a few-ns-long pulse can result in a transition from a gain-guided to an index-guided structure, leading to near and far field narrowing. Under continuous wave operation the longitudinally varying temperature profile is obtained self-consistently. The resulting unfavorable narrowing of the near field can be successfully counteracted by etching trenches.
  • Thumbnail Image
    Item
    Beam combining scheme for high-power broad-area semiconductor lasers with Lyot-filtered reinjection: Modeling, simulations, and experiments
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Brée, Carsten; Raab, Volker; Montiel-Ponsoda, Joan; Garre-Werner, Guillermo; Staliunas, Kestutis; Bandelow, Uwe; Radziunas, Mindaugas
    A brightness- and power-scalable polarization beam combining scheme for high-power, broadarea semiconductor laser diodes is investigated numerically and experimentally. To achieve the beam combining, we employ Lyot-filtered optical reinjection from an external cavity, which forces lasing of the individual diodes on interleaved frequency combs with overlapping envelopes and enables a high optical coupling efficiency. Unlike conventional spectral beam combining schemes with diffraction gratings, the optical coupling efficiency is insensitive to thermal drifts of laser wavelengths. This scheme can be used for efficient coupling of a large number of laser diodes and paves the way towards using broad-area laser diode arrays for cost-efficient material processing, which requires high-brilliance emission and optical powers in the kW-regime.
  • Thumbnail Image
    Item
    Numerical study of coherence of optical feedback in semiconductor laser dynamics
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Radziunas, Mindaugas; Little, Douglas J.; Kane, Deborah M.
    The nonlinear dynamics of semiconductor laser with coherent, as compared to incoherent, delayed optical feedback systems have been discussed and contrasted in prior research literature. Here, we report simulations of how the dynamics change as the coherence of the optical feedback is systematically varied from being coherent to incoherent. An increasing rate of phase disturbance is used to vary the coherence. An edge emitting, 830nm, Fabry Perot semiconductor laser with a long external cavity is simulated. Following this study, consideration of prior and future experimental studies should include evaluation of where on the continuum of partial coherence the delayed optical feedback sits. Partial coherence is a parameter that will affect the dynamics.
  • Thumbnail Image
    Item
    Simulation and design of a compact GaAs based tunable dual-wavelength diode laser system
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Koester, Jan-Philipp; Radziunas, Mindaugas; Zeghuzi, Anissa; Wenzel, Hans; Knigge, Andrea
    We present our design of a compact, integrated and tunable dual-wavelength diode laser system emitting around 785 nm, which is of interest for several applications like Raman spectroscopy and the generation of THz radiation. To achieve a more compact device compared to previous GaAs based designs two etch depths are realized, leading to shallowly etched ridge waveguides in regions were optical gain is applied and deeply etched waveguides used to enable compact integrated waveguide components. The device parameters are optimized using a numerically efficient simulation tool for passive waveguides. Subsequently, the entire laser system is further analyzed applying a sophisticated traveling-wave equation based model for active devices giving access to internal intensity and carrier density distributions. It is shown that active laser simulations are crucial to deduce critical and performance limiting design aspects not accessible via an all-passive simulation.
  • Thumbnail Image
    Item
    Traveling wave analysis of non-thermal far-field blooming in high-power broad-area lasers
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Zeghuzi, Anissa; Radziunas, Mindaugas; Wünsche, Hans-Jürgen; Koester, Jan-Philipp; Wenzel, Hans; Bandelow, Uwe; Knigge, Andrea
    With rising current the lateral far-field angle of high-power broad-area lasers widens (far-field blooming) which can be partly attributed to non-thermal effects due to carrier induced refractive index and gain changes that become the dominant mechanism under pulsed operation. To analyze the non-thermal contribution to far-field blooming we use a traveling wave based model that properly describes the injection of the current into and the diffusion of the carriers within the active region. Although no pre-assumptions regarding the modal composition of the field is made and filamentation is automatically accounted for, the highly dynamic time-dependent optical field distribution can be very well represented by only few modes of the corresponding stationary waveguide equation obtained by a temporal average of the carrier density and field intensity. The reduction of current spreading and spatial holeburning by selecting proper design parameters can substantially improve the beam quality of the laser.