2016, Radziunas, Mindaugas

In this paper, we discuss the relations between the spatially-distributed traveling wave, Lang-Kobayashi, and a new multi-mode delay differential equation models for Fabry-Perot type semiconductor diode lasers with an external optical feedback. All these models govern the dynamics of the slowly varying complex amplitudes of the optical fields and carrier density. To compare the models, we calculate the cavity modes determined by the threshold carrier density and optical frequency of the steady states in all three models. These calculations show that the Lang-Kobayashi type model is in good agreement with the traveling wave model only for the small feedback regimes, whereas newly derived multi-mode delay differential equation model remains correct even at moderate and large optical feedback regimes.

2012, Arkhipov, Rostislav, Pimenov, Alexander, Radziunas, Mindaugas, Vladimirov, Andrei G., Arsenjevi´c, Dejan, Rachinskii, Dmitrii, Schmeckebier, Holger, Bimberg, Dieter

Hybrid mode-locking in a two section edge-emitting semiconductor laser is studied numerically and analytically using a set of three delay differential equations. In this set the external RF signal applied to the saturable absorber section is modeled by modulation of the carrier relaxation rate in this section. Estimation of the locking range where the pulse repetition frequency is synchronized with the frequency of the external modulation is performed numerically and the effect of the modulation shape and amplitude on this range is investigated. Asymptotic analysis of the dependence of the locking range width on the laser parameters is carried out in the limit of small signal modulation. Our numerical simulations indicate that hybrid mode-locking can be also achieved in the cases when the frequency of the external modulation is approximately twice larger and twice smaller than the pulse repetition frequency of the free running passively mode-locked laser fP . Finally, we provide an experimental demonstration of hybrid mode-locking in a 20 GHz quantum-dot laser with the modulation frequency of the reverse bias applied to the absorber section close to fP / 2.