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Author: Radziunas, Mindaugas × End date: 2019 × Start date: 2010 × Type: Text × Subject: simulations × WGL Institute: WIAS ×

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Now showing 1 - 4 of 4
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    Mathematical modeling and numerical simulations of diode lasers with micro-integrated external resonators
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2016) Radziunas, Mindaugas
    This report summarizes our scientific activities within the project MANUMIEL (BMBF Program “Förderung der Wissenschaftlich-Technologischen Zusammenarbeit (WTZ) mit der Republik Moldau”, FKZ 01DK13020A). Namely, we discuss modeling of external cavity diode lasers, numerical simulations and analysis of these devices using the software package LDSL-tool, as well as the development of this software.
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    Modeling and simulations of beam stabilization in edge-emitting broad area semiconductor devices
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2013) Radziunas, Mindaugas; Cˇ iegis, Raimondas
    A 2+1 dimensional PDE traveling wave model describing spatial-lateral dynamics of edge-emitting broad area semiconductor devices is considered. A numerical scheme based on a split-step Fourier method is presented and implemented on a parallel compute cluster. Simulations of the model equations are used for optimizing of existing devices with respect to the emitted beam quality, as well as for creating and testing of novel device design concepts
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    Traveling wave modeling of nonlinear dynamics in multisection semiconductor lasers
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2016) Radziunas, Mindaugas
    A hierarchy of 1 (time) + 1 (space) dimensional first-order partial differential equation (traveling wave) models is used for a description of dynamics in individual semiconductor lasers, various multisection semiconductor lasers, and coupled laser systems. Consequent modifications of the basic traveling wave model allow for taking into account different physical effects such as the gain dispersion, the thermal detuning, the spatial hole burning of carriers, the nonlinear gain saturation, or various carrier exchange processes in quantum dot lasers. For illustration, the model was applied for simulations of dynamics in complex ring laser with four branches of filtered feedback. Finally, several advanced techniques for model analysis such as calculation of instantaneous optical modes, finding of steady states, and numerical continuation and bifurcation analysis of the model equations were discussed and illustrated by example simulations.
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    Modeling and efficient simulations of broad-area edge-emitting semiconductor lasers and amplifiers
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2016) Radziunas, Mindaugas
    We present a (2+1)-dimensional partial differential equation model for spatial-lateral dynamics of edge-emitting broad-area semiconductor devices and several extensions of this model describing different physical effects. MPI-based parallelization of the resulting middlesize numerical problem is implemented and tested on the blade cluster and separate multi-core computers at the Weierstrass Institute in Berlin. It was found, that an application of 25-30 parallel processes on all considered platforms was guaranteeing a nearly optimal performance of the algorithm with the speedup around 20-25 and the efficiency of 0.7-0.8. It was also shown, that a simultaneous usage of several in-house available multi-core computers allows a further increase of the speedup without a significant loss of the efficiency. Finally, an importance of the considered problem and the efficient numerical simulations of this problem were illustrated by a few examples occurring in real world applications.