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Mathematical modeling and numerical simulations of diode lasers with micro-integrated external resonators

2016, Radziunas, Mindaugas

This report summarizes our scientific activities within the project MANUMIEL (BMBF Program “Förderung der Wissenschaftlich-Technologischen Zusammenarbeit (WTZ) mit der Republik Moldau”, FKZ 01DK13020A). Namely, we discuss modeling of external cavity diode lasers, numerical simulations and analysis of these devices using the software package LDSL-tool, as well as the development of this software.

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A multi-mode delay differential equation model for lasers with optical feedback

2016, Radziunas, Mindaugas

In this paper, we discuss the relations between the spatially-distributed traveling wave, Lang-Kobayashi, and a new multi-mode delay differential equation models for Fabry-Perot type semiconductor diode lasers with an external optical feedback. All these models govern the dynamics of the slowly varying complex amplitudes of the optical fields and carrier density. To compare the models, we calculate the cavity modes determined by the threshold carrier density and optical frequency of the steady states in all three models. These calculations show that the Lang-Kobayashi type model is in good agreement with the traveling wave model only for the small feedback regimes, whereas newly derived multi-mode delay differential equation model remains correct even at moderate and large optical feedback regimes.

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Time-dependent simulation of thermal lensing in high-power broad-area semiconductor lasers

2019, Zeghuzi, Anissa, Wünsche, Hans-Jürgen, Wenzel, Hans, Radziunas, Mindaugas, Fuhrmann, Jürgen, Klehr, Andreas, Bandelow, Uwe, Knigge, Andrea

We propose a physically realistic and yet numerically applicable thermal model to account for short and long term self-heating within broad-area lasers. Although the temperature increase is small under pulsed operation, a waveguide that is formed within a few-ns-long pulse can result in a transition from a gain-guided to an index-guided structure, leading to near and far field narrowing. Under continuous wave operation the longitudinally varying temperature profile is obtained self-consistently. The resulting unfavorable narrowing of the near field can be successfully counteracted by etching trenches.

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Efficient coupling of inhomogeneous current spreading and dynamic electro-optical models for broad-area edge-emitting semiconductor devices

2017, Radziunas, Mindaugas, Zeghuzi, Anissa, Fuhrmann, Jürgen, Koprucki, Thomas, Wünsche, Hans-Jürgen, Wenzel, Hans, Bandelow, Uwe

We extend a 2 (space) + 1 (time)-dimensional traveling wave model for broad-area edgeemitting semiconductor lasers by a model for inhomogeneous current spreading from the contact to the active zone of the laser. To speedup the performance of the device simulations, we suggest and discuss several approximations of the inhomogeneous current density in the active zone.

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Broadening of mode-locking pulses in quantum-dot semiconductor lasers : simulation, analysis and experiments

2010, Radziunas, Mindaugas, Vladimirov, Andrei G., Viktorov, Evgeny A., Fiol, Gerrit, Schmeckebier, Holger, Bimberg, Dieter

We consider a mode-locked quantum-dot edge-emitting semiconductor laser consisting of a reverse biased saturable absorber and a forward biased amplifying section. To describe the dynamics of this laser we use the traveling wave model taking into account carrier exchange processes between a reservoir and the quantum dots. A comprehensive parameter study is presented and an analysis of mode-locking pulse broadening with an increase of injection current is performed. The results of our theoretical analysis are supported by experimental data demonstrating a strong pulse asymmetry in a monolithic two section quantum dot mode-locked laser

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Improving the stability of distributed-feedback tapered master-oscillator power-amplifiers

2009, Tronciu, Vasile Z., Lichtner, Mark, Radziunas, Mindaugas, Bandelow, U., Wenzel, H.

We report theoretical results on the wavelength stabilization in distributed-feedback master-oscillator power-amplifiers which are compact semiconductor laser devices capable of emitting a high brilliance beam at an optical power of several Watts. Based on a traveling wave equation model we calculate emitted optical power and spectral maps in dependence on the pump of the power amplifier. We show that a proper choice of the Bragg grating type and coupling coefficient allows to optimize the laser operation, such that for a wide range of injection currents the laser emits a high intensity continuous wave beam.

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Efficient coupling of electro-optical and heat-transport models for broad-area semiconductor lasers

2018, Radziunas, Mindaugas, Fuhrmann, Jürgen, Zeghuzi, Anissa, Wünsche, Hans-Jürgen, Koprucki, Thomas, Brée, Carsten, Wenzel, Hans, Bandelow, Uwe

In this work, we discuss the modeling of edge-emitting high-power broad-area semiconductor lasers. We demonstrate an efficient iterative coupling of a slow heat transport (HT) model defined on multiple vertical-lateral laser cross-sections with a fast dynamic electro-optical (EO) model determined on the longitudinal-lateral domain that is a projection of the device to the active region of the laser. Whereas the HT-solver calculates temperature and thermally-induced refractive index changes, the EO-solver exploits these distributions and provides time-averaged field intensities, quasi-Fermi potentials, and carrier densities. All these time-averaged distributions are used repetitively by the HT-solver for the generation of the heat sources entering the HT problem solved in the next iteration step.

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Mode transitions in distributed-feedback tapered master-oscillator power-amplifier

2008, Radziunas, Mindaugas, Tronciu, Vasile Z., Bandelow, Uwe, Lichtner, Mark, Spreemann, Martin, Wenzel, Hans

Theoretical and experimental investigations have been carried out to study the spectral and spatial behavior of monolithically integrated distributed-feedback tapered master-oscillators power-amplifiers emitting around 973 nm. Introduction of self and cross heating effects and the analysis of longitudinal optical modes allows us to explain experimental results. The results show a good qualitative agreement between measured and calculated characteristics.

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Hybrid mode-locking in edge-emitting semiconductor lasers: Simulations, analysis and experiments

2012, Arkhipov, Rostislav, Pimenov, Alexander, Radziunas, Mindaugas, Vladimirov, Andrei G., Arsenjevi´c, Dejan, Rachinskii, Dmitrii, Schmeckebier, Holger, Bimberg, Dieter

Hybrid mode-locking in a two section edge-emitting semiconductor laser is studied numerically and analytically using a set of three delay differential equations. In this set the external RF signal applied to the saturable absorber section is modeled by modulation of the carrier relaxation rate in this section. Estimation of the locking range where the pulse repetition frequency is synchronized with the frequency of the external modulation is performed numerically and the effect of the modulation shape and amplitude on this range is investigated. Asymptotic analysis of the dependence of the locking range width on the laser parameters is carried out in the limit of small signal modulation. Our numerical simulations indicate that hybrid mode-locking can be also achieved in the cases when the frequency of the external modulation is approximately twice larger and twice smaller than the pulse repetition frequency of the free running passively mode-locked laser fP . Finally, we provide an experimental demonstration of hybrid mode-locking in a 20 GHz quantum-dot laser with the modulation frequency of the reverse bias applied to the absorber section close to fP / 2.

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Traveling wave analysis of non-thermal far-field blooming in high-power broad-area lasers

2019, Zeghuzi, Anissa, Radziunas, Mindaugas, Wünsche, Hans-Jürgen, Koester, Jan-Philipp, Wenzel, Hans, Bandelow, Uwe, Knigge, Andrea

With rising current the lateral far-field angle of high-power broad-area lasers widens (far-field blooming) which can be partly attributed to non-thermal effects due to carrier induced refractive index and gain changes that become the dominant mechanism under pulsed operation. To analyze the non-thermal contribution to far-field blooming we use a traveling wave based model that properly describes the injection of the current into and the diffusion of the carriers within the active region. Although no pre-assumptions regarding the modal composition of the field is made and filamentation is automatically accounted for, the highly dynamic time-dependent optical field distribution can be very well represented by only few modes of the corresponding stationary waveguide equation obtained by a temporal average of the carrier density and field intensity. The reduction of current spreading and spatial holeburning by selecting proper design parameters can substantially improve the beam quality of the laser.