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- ItemStudy of wavelength switching time in tunable semiconductor micro-ring lasers: experiment and travelling wave description(Washington, DC : OSA, 2018) Khoder, Mulham; Radziunas, Mindaugas; Tronciu, Vasile; Verschaffelt, GuyWe report in this paper the wavelength switching features of semiconductor ring lasers that are wavelength tunable based on filtered optical feedback. The filtered feedback provides a wavelength dependent loss mechanism in these devices with which a particular longitudinal mode, and thus a particular wavelength, can be selected by changing the filter characteristics of the feedback channel. We investigate how the wavelength switching speed depends on the amplitude of the modulation of the switching driving signal and on the different phase factors within the filtering branches of the SRL. We compare qualitatively the experimental results with numerical simulations based on a travelling wave model. We also investigate the dynamical behavior of the lasing and nonlasing longitudinal modes in the two channels of the clockwise and the counter-clockwise directions. We show the crucial importance of various phase relation factors on the wavelength switching behavior. Finally, we discuss what limits the switching speed and how we can accelerate it.
- ItemSpatially modulated broad-area lasers for narrow lateral far-field divergence(Washington, DC : Soc., 2021) Zeghuzi, Anissa; Koester, Jan-Philipp; Radziunas, Mindaugas; Christopher, Heike; Wenzel, Hans; Knigge, AndreaA novel laser design is presented that combines a longitudinal-lateral gain-loss modulation with an additional phase tailoring achieved by etching rectangular trenches. At 100 A pulsed operation, simulations predict a far-field profile with 0.3° full width at half maximum (ΘFWHM=0.3∘) where a 0.4°-wide main lobe contains 40% of the emitted optical output power (Θ40%=0.4∘). While far-field measurements of these structured lasers emitting 10 ns long pulses with 35 W peak power confirm a substantial enhancement of radiation within the central 1∘ angular range, the measured far-field intensity outside of the obtained central peak remains high.
- ItemSemiconductor laser linewidth theory revisited(Basel : MDPI, 2021) Wenzel, Hans; Kantner, Markus; Radziunas, Mindaugas; Bandelow, UweMore and more applications require semiconductor lasers distinguished not only by large modulation bandwidths or high output powers, but also by small spectral linewidths. The theoretical understanding of the root causes limiting the linewidth is therefore of great practical relevance. In this paper, we derive a general expression for the calculation of the spectral linewidth step by step in a self-contained manner. We build on the linewidth theory developed in the 1980s and 1990s but look from a modern perspective, in the sense that we choose as our starting points the time-dependent coupled-wave equations for the forward and backward propagating fields and an expansion of the fields in terms of the stationary longitudinal modes of the open cavity. As a result, we obtain rather general expressions for the longitudinal excess factor of spontaneous emission (K-factor) and the effective α-factor including the effects of nonlinear gain (gain compression) and refractive index (Kerr effect), gain dispersion, and longitudinal spatial hole burning in multi-section cavity structures. The effect of linewidth narrowing due to feedback from an external cavity often described by the so-called chirp reduction factor is also automatically included. We propose a new analytical formula for the dependence of the spontaneous emission on the carrier density avoiding the use of the population inversion factor. The presented theoretical framework is applied to a numerical study of a two-section distributed Bragg reflector laser.
- ItemCalculation of the steady states in dynamic semiconductor laser models(Dordrecht [u.a.] : Springer Science + Business Media B.V, 2022) Radziunas, MindaugasWe discuss numerical challenges in calculating stable and unstable steady states of widely used dynamic semiconductor laser models. Knowledge of these states is valuable when analyzing laser dynamics and different properties of the lasing states. The example simulations and analysis mainly rely on 1(time)+1(space)-dimensional traveling-wave models, where the steady state defining conditions are formulated as a system of nonlinear algebraic equations. The performed steady state calculations reveal limitations of the Lang-Kobayashi model, explain nontrivial bias threshold relations in lasers with several electrical contacts, or predict and explain transient dynamics when simulating such lasers.
- ItemModeling and simulations of beam stabilization in edge-emitting broad area semiconductor devices(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2013) Radziunas, Mindaugas; Cˇ iegis, RaimondasA 2+1 dimensional PDE traveling wave model describing spatial-lateral dynamics of edge-emitting broad area semiconductor devices is considered. A numerical scheme based on a split-step Fourier method is presented and implemented on a parallel compute cluster. Simulations of the model equations are used for optimizing of existing devices with respect to the emitted beam quality, as well as for creating and testing of novel device design concepts
- ItemChirped photonic crystal for spatially filtered optical feedback to a broad-area laser(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2018) Brée, Carsten; Gailevicius, Darius; Purlys, Vytautas; Werner, Guillermo Garre; Staliunas, Kestutis; Rathsfeld, Andreas; Schmidt, Gunther; Radziunas, MindaugasWe derive and analyze an efficient model for reinjection of spatially filtered optical feedback from an external resonator to a broad area, edge emitting semiconductor laser diode. Spatial filtering is achieved by a chirped photonic crystal, with variable periodicity along the optical axis and negligible resonant backscattering. The optimal chirp is obtained from a genetic algorithm, which yields solutions that are robust against perturbations. Extensive numerical simulations of the composite system with our optoelectronic solver indicate that spatially filtered reinjection enhances lower-order transversal optical modes in the laser diode and, consequently, improves the spatial beam quality.
- ItemDynamics of micro-integrated external-cavity diode lasers: Simulations, analysis and experiments(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2014) Radziunas, Mindaugas; Tronciu, Vasile Z.; Luvsandamdin, Erdenetsetseg; Kürbis, Christian; Wicht, Andreas; Wenzel, HansThis paper reports the results of numerical and experimental investigations of the dynamics of an external cavity diode laser device composed of a semiconductor laser and a distant Bragg grating, which provides an optical feedback. Due to the influence of the feedback, this system can operate at different dynamic regimes. The traveling wave model is used for simulations and analysis of the nonlinear dynamics in the considered laser device. Based on this model, a detailed analysis of the optical modes is performed, and the stability of the stationary states is discussed. It is shown, that the results obtained from the simulation and analysis of the device are in good agreement with experimental findings.
- ItemSpatial rocking phenomenon in broad area semiconductor lasers(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2011) Radziunas, Mindaugas; Staliunas, KestutisThe spatial ``rocking'' is a dynamical effect converting a phase-invariant oscillatory system into a phase-bistable one, where the average phase of the system locks to one of two values differing by $pi$. We demonstrate theoretically the spatial rocking in experimentally accessible and practically relevant systems -- the broad area semiconductor lasers. By numerical integration of the laser model equations we show the phase bistability of the optical fields and explore the bistability area in parameter space. We also predict the spatial patterns, such as phase domain walls and phase solitons, which are characteristic for the phase-bistable spatially extended pattern forming systems.
- ItemMathematical modeling and numerical simulations of diode lasers with micro-integrated external resonators(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2016) Radziunas, MindaugasThis report summarizes our scientific activities within the project MANUMIEL (BMBF Program “Förderung der Wissenschaftlich-Technologischen Zusammenarbeit (WTZ) mit der Republik Moldau”, FKZ 01DK13020A). Namely, we discuss modeling of external cavity diode lasers, numerical simulations and analysis of these devices using the software package LDSL-tool, as well as the development of this software.
- ItemLongitudinal modes of multisection ring and edge-emitting semiconductor lasers(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2014) Radziunas, MindaugasWe use the traveling wave model for simulating and analyzing nonlinear dynamics of multisection ring and edge-emitting semiconductor laser devices. We introduce the concept of instantaneous longitudinal optical modes and present an algorithm for their computation. A semiconductor ring laser was considered to illustrate the advantages of the mode analysis.