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- ItemMolecular beam epitaxy of graphene on ultra-smooth nickel: growth mode and substrate interactions(London : Institute of Physics, 2014) Wofford, J.M.; Oliveira Jr, M.H.; Schumann, T.; Jenichen, B.; Ramsteiner, M.; Jahn, U.; Fölsch, S.; Lopes, J.M.J.; Riechert, H.Graphene is grown by molecular beam epitaxy using epitaxial Ni films on MgO(111) as substrates. Raman spectroscopy and scanning tunneling microscopy reveal the graphene films to have few crystalline defects. While the layers are ultra-smooth over large areas, we find that Ni surface features lead to local non-uniformly thick graphene inclusions. The influence of the Ni surface structure on the position and morphology of these inclusions strongly suggests that multilayer graphene on Ni forms at the interface of the first complete layer and metal substrate in a growth-from-below mechanism. The interplay between Ni surface features and graphene growth behavior may facilitate the production of films with spatially resolved multilayer inclusions through engineered substrate surface morphology.
- ItemExchange-Striction Driven Ultrafast Nonthermal Lattice Dynamics in NiO(College Park, Md. : APS, 2021) Windsor, Y.W.; Zahn, D.; Kamrla, R.; Feldl, J.; Seiler, H.; Chiang, C.-T.; Ramsteiner, M.; Widdra, W.; Ernstorfer, R.; Rettig, L.We use femtosecond electron diffraction to study ultrafast lattice dynamics in the highly correlated antiferromagnetic (AFM) semiconductor NiO. Using the scattering vector (Q) dependence of Bragg diffraction, we introduce Q-resolved effective temperatures describing the transient lattice. We identify a nonthermal lattice state with preferential displacement of O compared to Ni ions, which occurs within ∼0.3 ps and persists for 25 ps. We associate this with transient changes to the AFM exchange striction-induced lattice distortion, supported by the observation of a transient Q asymmetry of Friedel pairs. Our observation highlights the role of spin-lattice coupling in routes towards ultrafast control of spin order.
- ItemPhonon anharmonicities and ultrafast dynamics in epitaxial Sb2Te3([London] : Macmillan Publishers Limited, part of Springer Nature, 2020) Bragaglia, V.; Ramsteiner, M.; Schick, D.; Boschker, J.E.; Mitzner, R.; Calarco, R.; Holldack, K.In this study we report on the investigation of epitaxially grown Sb2Te3 by employing Fourier-Transform transmission Spectroscopy (FTS) with laser-induced Coherent Synchrotron Radiation (CSR) in the Terahertz (THz) spectral range. Static spectra in the range between 20 and 120 cm−1 highlight a peculiar softening of an in-plane IR-active phonon mode upon temperature decrease, as opposed to all Raman active modes which instead show a hardening upon temperature decrease in the same energy range. The phonon mode softening is found to be accompanied by an increase of free carrier concentration. A strong coupling of the two systems (free carriers and phonons) is observed and further evidenced by exciting the same phonon mode at 62 cm−1 within an ultrafast pump-probe scheme employing a femtosecond laser as pump and a CSR single cycle THz pulse as probe. Separation of the free carrier contribution and the phonon resonance in the investigated THz range reveals that, both damping of the phonon mode and relaxation of hot carriers in the time domain happen on the same time scale of 5 ps. This relaxation is about a factor of 10 slower than expected from the Lorentz time-bandwidth limit. The results are discussed in the framework of phonon scattering at thermal and laser induced transient free carriers.
- ItemBMBF-Förderschwerpunkt: Quantenstruktursysteme auf der Basis von III-V-Halbleitern, Teilvorhaben: Quantendrähte und Quantenpunkte durch Überwachsen von lateral strukturierten nicht-[100]-orientierten Substraten und Schichtsystemen ; Schlußbericht(Berlin : Paul-Drude-Institut für Festkörperphysik, 2000) Nötzel, R.; Fricke, J.; Jahn, U.; Niu, Z.C.; Ramsteiner, M.; Schönherr, H.P.; Trampert, A.[no abstract available]