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- ItemFibroblast Response to Nanocolumnar TiO2 Structures Grown by Oblique Angle Sputter Deposition(Weinheim : Wiley-VCH, 2021) Kapprell, Uta; Friebe, Sabrina; Grüner, Susann; Grüner, Christoph; Kupferer, Astrid; Rauschenbach, Bernd; Mayr, Stefan G.Cells are established to sense and respond to the properties, including nano- and microscale morphology, of the substrate they adhere to, which opens up the possibility to tailor bioactivity. With this background, the potential of tilted TiO2 nanostructures grown by oblique angle sputtering to affect fibroblasts with particular focus on inducing anisotropy in cell behavior is explored. By depositing TiO2 at different oblique angles relative to the substrate normal, morphologies, columnar tilt angle, roughness, and distances between neighbored nanocolumns can be adjusted. To assess bioactivity of the resulting structures, L929-mouse fibroblasts are seeded in vitro on TiO2 nanostructured substrates. Angle-dependent movement and velocity distributions of the cells on differently tilted columns and a smooth reference sample are studied. Cell proliferation rates and cell areas are additional factors which provide information about viability and the well-being of cells. It could be shown that the local topography of the surface has an influence on the directed movement of the cells. © 2021 The Authors. Advanced Materials Interfaces published by Wiley-VCH GmbH
- ItemComparative study of sculptured metallic thin films deposited by oblique angle deposition at different temperatures(Frankfurt, M. : Beilstein-Institut zur Förderung der Chemischen Wissenschaften, 2018) Liedtke, Susann; Grüner, Christoph; Gerlach, Jürgen W.; Rauschenbach, BerndMetals with a wide range of melting points are deposited by electron beam evaporation under oblique deposition geometry on thermally oxidized Si substrates. During deposition the sample holder is cooled down to 77 K. It is observed that all obliquely deposited metals grow as tilted, high aspect ratio columns and hence with a similar morphology. A comparison of such columns with those deposited at room temperature (300 K) reveals that shadowing dominates the growth process for columns deposited at 77 K, while the impact of surface diffusion is significantly increased at elevated substrate temperatures. Furthermore, it is discussed how the incidence angle of the incoming particle flux and the substrate temperature affect the columnar tilt angles and the porosity of the sculptured thin films. Exemplarily for tilted Al columns deposited at 77 K and at 300 K, in-plane pole figure measurements are carried out. A tendency to form a biaxial texture as well as a change in the crystalline structure depending on the substrate temperature is found for those films.
- ItemStructural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses(Basel : MDPI, 2020) Behrens, Mario; Lotnyk, Andriy; Bryja, Hagen; Gerlach, Jürgen W.; Rauschenbach, BerndGe-Sb-Te-based phase change memory alloys have recently attracted a lot of attention due to their promising applications in the fields of photonics, non-volatile data storage, and neuromorphic computing. Of particular interest is the understanding of the structural changes and underlying mechanisms induced by short optical pulses. This work reports on structural changes induced by single nanosecond UV laser pulses in amorphous and epitaxial Ge2Sb2Te5 (GST) thin films. The phase changes within the thin films are studied by a combined approach using X-ray diffraction and transmission electron microscopy. The results reveal different phase transitions such as crystalline-to-amorphous phase changes, interface assisted crystallization of the cubic GST phase and structural transformations within crystalline phases. In particular, it is found that crystalline interfaces serve as crystallization templates for epitaxial formation of metastable cubic GST phase upon phase transitions. By varying the laser fluence, GST thin films consisting of multiple phases and different amorphous to crystalline volume ratios can be achieved in this approach, offering a possibility of multilevel data storage and realization of memory devices with very low resistance drift. In addition, this work demonstrates amorphization and crystallization of GST thin films by using only one UV laser with one single pulse duration and one wavelength. Overall, the presented results offer new perspectives on switching pathways in Ge-Sb-Te-based materials and show the potential of epitaxial Ge-Sb-Te thin films for applications in advanced phase change memory concepts.
- ItemInfluence of substrate dimensionality on the growth mode of epitaxial 3D-bonded GeTe thin films: From 3D to 2D growth(Amsterdam [u.a.] : Elsevier Science, 2019) Hilmi, Isom; Lotnyk, Andriy; Gerlach, Jürgen W.; Schumacher, Philipp; Rauschenbach, BerndThe pseudo-binary line of Sb2Te3-GeTe contains alloys featuring different crystalline characteristics from two-dimensionally (2D-) bonded Sb2Te3 to three-dimensionally (3D-) bonded GeTe. Here, the growth scenario of 3D-bonded GeTe is investigated by depositing epitaxial GeTe thin films on Si(111) and Sb2Te3-buffered Si(111) substrates using pulsed laser deposition (PLD). GeTe thin films were grown in trigonal structure within a temperature window for epitaxial growth of 210–270 °C on unbuffered Si(111) substrates. An unconventional growth onset was characterized by the formation of a thin amorphous GeTe layer. Nonetheless, the as-grown film is found to be crystalline. Furthermore, by employing a 2D-bonded Sb2Te3 thin film as a seeding layer on Si(111), a 2D growth of GeTe is harnessed. The epitaxial window can substantially be extended especially towards lower temperatures down to 145 °C. Additionally, the surface quality is significantly improved. The inspection of the local structure of the epitaxial films reveals the presence of a superposition of twinned domains, which is assumed to be an intrinsic feature of such thin films. This work might open a way for an improvement of an epitaxy of a 3D-bonded material on a highly-mismatched substrate (e.g. Si (111)) by employing a 2D-bonded seeding layer (e.g. Sb2Te3).
- ItemIon Beam Assisted Deposition of Thin Epitaxial GaN Films(Basel : MDPI, 2017-6-23) Rauschenbach, Bernd; Lotnyk, Andriy; Neumann, Lena; Poppitz, David; Gerlach, Jürgen W.The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy <100 eV) is capable to modify the characteristics of the growing film without generating a large number of irradiation induced defects. The nitrogen ion beam assisted molecular beam epitaxy (ion energy <25 eV) is used to deposit GaN thin films on (0001)-oriented 6H-SiC substrates at 700 °C. The films are studied in situ by reflection high energy electron diffraction, ex situ by X-ray diffraction, scanning tunnelling microscopy, and high-resolution transmission electron microscopy. It is demonstrated that the film growth mode can be controlled by varying the ion to atom ratio, where 2D films are characterized by a smooth topography, a high crystalline quality, low biaxial stress, and low defect density. Typical structural defects in the GaN thin films were identified as basal plane stacking faults, low-angle grain boundaries forming between w-GaN and z-GaN and twin boundaries. The misfit strain between the GaN thin films and substrates is relieved by the generation of edge dislocations in the first and second monolayers of GaN thin films and of misfit interfacial dislocations. It can be demonstrated that the low-energy nitrogen ion assisted molecular beam epitaxy is a technique to produce thin GaN films of high crystalline quality.
- ItemBiaxially Textured Titanium Thin Films by Oblique Angle Deposition: Conditions and Growth Mechanisms(Weinheim : Wiley-VCH, 2020) Liedtke-Grüner, Susann; Grüner, Christoph; Lotnyk, Andriy; Gerlach, Juergen W.; Rauschenbach, BerndGrowing highly crystalline nanowires over large substrate areas remains an ambiguous task nowadays. Herein, a time-efficient and easy-to-handle bottom-up approach is demonstrated that enables the self-assembled growth of biaxially textured Ti thin films composed of single-crystalline nanowires in a single-deposition step. Ti thin films are deposited under highly oblique incidence angles by electron beam evaporation on amorphous substrates. Substrate temperature, angle of the incoming particle flux, and working pressure are varied to optimize the crystallinity in those films. Height-resolved structure information of individual nanowires is provided by a transmission electron microscopy (TEM) nanobeam, high-resolution TEM, and electron diffraction. Ti nanowires are polycrystalline at 77 K, whereas for ≥300 K, single-crystalline nanowires are tendentially found. The Ti crystals grow along the thermodynamically favored c-direction, but the nanowires’ tilt angle is determined by shadowing. Biaxially textured Ti thin films require a certain temperature range combined with highly oblique deposition angles, which is proved by X-ray in-plane pole figures. A general correlation between average activation energy for surface self-diffusion and melting point of metals is given to estimate the significant influence of surface self-diffusion on the evolution of obliquely deposited metal thin films.
- ItemResearch Update: Van-der-Waals epitaxy of layered chalcogenide Sb2Te3 thin films grown by pulsed laser deposition(Melville, NY : AIP Publ., 2017) Hilmi, Isom; Lotnyk, Andriy; Gerlach, Jürgen W.; Schumacher, Philipp; Rauschenbach, BerndAn attempt to deposit a high quality epitaxial thin film of a two-dimensionally bonded (layered) chalcogenide material with van-der-Waals (vdW) epitaxy is of strong interest for non-volatile memory application. In this paper, the epitaxial growth of an exemplary layered chalcogenide material, i.e., stoichiometric Sb2Te3 thin films, is reported. The films were produced on unreconstructed highly lattice-mismatched Si(111) substrates by pulsed laser deposition (PLD). The films were grown by vdW epitaxy in a two-dimensional mode. X-ray diffraction measurements and transmission electron microscopy revealed that the films possess a trigonal Sb2Te3 structure. The single atomic Sb/Te termination layer on the Si surface was formed initializing the thin film growth. This work demonstrates a straightforward method to deposit vdW-epitaxial layered chalcogenides and, at the same time, opens up the feasibility to fabricate chalcogenide vdW heterostructures by PLD.
- ItemNanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition(Heidelberg [u.a.] : Springer, 2017) Liu, Ying; Hirsch, Dietmar; Fechner, Renate; Hong, Yilin; Fu, Shaojun; Frost, Frank; Rauschenbach, BerndThe ion beam sputtering (IBS) of smooth mono-elemental Si with impurity co-deposition is extended to a pre-rippled binary compound surface of fused silica (SiO2). The dependence of the rms roughness and the deposited amount of Al on the distance from the Al source under Ar+ IBS with Al co-deposition was investigated on smooth SiO2, pre-rippled SiO2, and smooth Si surfaces, using atomic force microscopy and X-ray photoelectron spectroscopy. Although the amounts of Al deposited on these three surfaces all decreased with increasing distance from the Al target, the morphology and rms roughness of the smooth Si surface did not demonstrate a strong distance dependence. In contrast to smooth Si, the rms roughness of both the smooth and pre-rippled SiO2 surfaces exhibited a similar distance evolution trend of increasing, decreasing, and final stabilization at the distance where the results were similar to those obtained without Al co-deposition. However, the pre-rippled SiO2 surfaces showed a stronger modulation of rms roughness than the smooth surfaces. At the incidence angles of 60° and 70°, dot-decorated ripples and roof-tiles were formed on the smooth SiO2 surfaces, respectively, whereas nanostructures of closely aligned grains and blazed facets were generated on the pre-rippled SiO2, respectively. The combination of impurity co-deposition with pre-rippled surfaces was found to facilitate the formation of novel types of nanostructures and morphological growth. The initial ripples act as a template to guide the preferential deposition of Al on the tops of the ripples or the ripple sides facing the Al wedge, but not in the valleys between the ripples, leading to 2D grains and quasi-blazed grating, which offer significant promise in optical applications. The rms roughness enhancement is attributed not to AlSi, but to AlOxFy compounds originating mainly from the Al source.
- ItemHighly sensitive and specific detection of E. coli by a SERS nanobiosensor chip utilizing metallic nanosculptured thin films(Cambridge : Soc., 2015) Srivastava, Sachin K.; Hamo, Hilla Ben; Kushmaro, Ariel; Marks, Robert S.; Grüner, Christoph; Rauschenbach, Bernd; Abdulhalim, IbrahimA nanobiosensor chip, utilizing surface enhanced Raman spectroscopy (SERS) on nanosculptured thin films (nSTFs) of silver, was shown to detect Escherichia coli (E. coli) bacteria down to the concentration level of a single bacterium. The sensor utilizes highly enhanced plasmonic nSTFs of silver on a silicon platform for the enhancement of Raman bands as checked with adsorbed 4-aminothiophenol molecules. T-4 bacteriophages were immobilized on the aforementioned surface of the chip for the specific capture of target E. coli bacteria. To demonstrate that no significant non-specific immobilization of other bacteria occurs, three different, additional bacterial strains, Chromobacterium violaceum, Paracoccus denitrificans and Pseudomonas aeruginosa were used. Furthermore, experiments performed on an additional strain of E. coli to address the specificity and reusability of the sensor showed that the sensor operates for different strains of E. coli and is reusable. Time resolved phase contrast microscopy of the E. coli-T4 bacteriophage chip was performed to study its interaction with bacteria over time. Results showed that the present sensor performs a fast, accurate and stable detection of E. coli with ultra-small concentrations of bacteria down to the level of a single bacterium in 10 μl volume of the sample.
- ItemDetection of small bunches of ions using image charges(London : Nature Publishing Group, 2018) Räcke, Paul; Spemann, Daniel; Gerlach, Jürgen W.; Rauschenbach, Bernd; Meijer, JanA concept for detection of charged particles in a single fly-by, e.g. within an ion optical system for deterministic implantation, is presented. It is based on recording the image charge signal of ions moving through a detector, comprising a set of cylindrical electrodes. This work describes theoretical and practical aspects of image charge detection (ICD) and detector design and its application in the context of real time ion detection. It is shown how false positive detections are excluded reliably, although the signal-to-noise ratio is far too low for time-domain analysis. This is achieved by applying a signal threshold detection scheme in the frequency domain, which - complemented by the development of specialised low-noise preamplifier electronics - will be the key to developing single ion image charge detection for deterministic implantation.