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- ItemThe influence of Mg doping on the nucleation of self-induced GaN nanowires(New York : American Institute of Physics, 2012) Limbach, F.; Caterino, R.; Gotschke, T.; Stoica, T.; Calarco, R.; Geelhaar, L.; Riechert, H.GaN nanowires were grown without any catalyst by plasma-assisted molecular beam epitaxy. Under supply of Mg, nanowire nucleation is faster, the areal density of wires increases to a higher value, and nanowire coalescence is more pronounced than without Mg. During nanowire nucleation the Ga desorption was monitored insitu by line-of-sight quadrupolemass spectrometry for various substrate temperatures. Nucleation energies of 4.0±0.3 eV and 3.2±0.3 eV without and with Mg supply were deduced, respectively. This effect has to be taken into account for the fabrication of nanowire devices and could be employed to tune the NW areal density.
- ItemGaN-based radial heterostructure nanowires grown by MBE and ALD(Bristol : Institute of Physics Publishing, 2013) Lari, L.; Ross, I.M.; Walther, T.; Black, K.; Cheze, C.; Geelhaar, L.; Riechert, H.; Chalker, P.R.A combination of molecular beam epitaxy (MBE) and atomic layer deposition (ALD) was adopted to fabricate GaN-based core/shell NW structures. ALD was used to deposit a HfO2 shell of onto the MBE grown GaN NWs. Electron transparent samples were prepared by focussed ion beam methods and characterized using state-of-the-art analytical transmission and scanning transmission electron microscopy. The polycrystalline coating was found to be uniform along the whole length of the NWs. Photoluminescence and Raman spectroscopy analysis confirms that the HfO2 ALD coating does not add any structural defect when deposited on the NWs.
- ItemContribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)(Milton Park : Taylor & Francis, 2013) Fromm, F.; Oliveira Jr, M.H.; Molina-Sánchez, A.; Hundhausen, M.; Lopes, J.M.J.; Riechert, H.; Wirtz, L.; Seyller, T.We report a Raman study of the so-called buffer layer with (6 3 x 6 3)R30 periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a non-vanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab initio phonon calculations reveal that these features can be attributed to the vibrational density of states of the buffer layer.