Filters

2016 - 201912020 - 20211

More filters

2019 - 201912020 - 20211
Reset filters

Settings

Author: Ruck, Michael × Publisher: London : Nature Publishing Group ×

Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Item
    Freestanding few-layer sheets of a dual topological insulator
    (London : Nature Publishing Group, 2021) Anh, Mai LĂȘ; Potapov, Pavel; Lubk, Axel; Doert, Thomas; Ruck, Michael
    The emergence of topological insulators (TIs) raised high expectations for their application in quantum computers and spintronics. Being bulk semiconductors, their nontrivial topology at the electronic bandgap enables dissipation-free charge and spin transport in protected metallic surface states. For application, crystalline thin films are requested in sufficient quantity. A suitable approach is the liquid phase exfoliation (LPE) of TI crystals that have layered structures. Bi2TeI is a weak 3D TI, which leads to protected edge states at the side facets of a crystal, as well as a topological crystalline insulator, which is responsible for protected states at the top and bottom faces. We developed an effective, scalable protocol for LPE of freestanding nanoflakes from Bi2TeI crystals. By heat treatment and sonication in isopropyl alcohol and poly(vinylpyrrolidone), crystalline Bi2TeI sheets with a thickness of ~50 nm were obtained and can therefore be considered for further processing toward microelectronic applications.
  • Thumbnail Image
    Item
    Correlation between topological band character and chemical bonding in a Bi14Rh3I9-based family of insulators
    (London : Nature Publishing Group, 2016) Rasche, Bertold; Isaeva, Anna; Ruck, Michael; Koepernik, Klaus; Richter, Manuel; van den Brink, Jeroen
    Recently the presence of topologically protected edge-states in Bi14Rh3I9 was confirmed by scanning tunnelling microscopy consolidating this compound as a weak 3D topological insulator (TI). Here, we present a density-functional-theory-based study on a family of TIs derived from the Bi14Rh3I9 parent structure via substitution of Ru, Pd, Os, Ir and Pt for Rh. Comparative analysis of the band-structures throughout the entire series is done by means of a unified minimalistic tight-binding model that evinces strong similarity between the quantum-spin-Hall (QSH) layer in Bi14Rh3I9 and graphene in terms of -molecular orbitals. Topologically non-trivial energy gaps are found for the Ir-, Rh-, Pt- and Pd-based systems, whereas the Os- and Ru-systems remain trivial. Furthermore, the energy position of the metal -band centre is identified as the parameter which governs the evolution of the topological character of the band structure through the whole family of TIs. The -band position is shown to correlate with the chemical bonding within the QSH layers, thus revealing how the chemical nature of the constituents affects the topological band character.