3 results
Search Results
Now showing 1 - 3 of 3
- ItemRobust Single Molecule Magnet Monolayers on Graphene and Graphite with Magnetic Hysteresis up to 28 K(Weinheim : Wiley-VCH, 2021) Spree, Lukas; Liu, Fupin; Neu, Volker; Rosenkranz, Marco; Velkos, Georgios; Wang, Yaofeng; Schiemenz, Sandra; Dreiser, Jan; Gargiani, Pierluigi; Valvidares, Manuel; Chen, Chia-Hsiang; Büchner, Bernd; Avdoshenko, Stanislav M.; Popov, Alexey A.The chemical functionalization of fullerene single molecule magnet Tb2@C80(CH2Ph) enables the facile preparation of robust monolayers on graphene and highly oriented pyrolytic graphite from solution without impairing their magnetic properties. Monolayers of endohedral fullerene functionalized with pyrene exhibit magnetic bistability up to a temperature of 28 K. The use of pyrene terminated linker molecules opens the way to devise integration of spin carrying units encapsulated by fullerene cages on graphitic substrates, be it single-molecule magnets or qubit candidates. © 2021 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH
- ItemControl of Positive and Negative Magnetoresistance in Iron Oxide : Iron Nanocomposite Thin Films for Tunable Magnetoelectric Nanodevices(2020) Nichterwitz, Martin; Honnali, Shashank; Zehner, Jonas; Schneider, Sebastian; Pohl, Darius; Schiemenz, Sandra; Goennenwein, Sebastian T.B.; Nielsch, Kornelius; Leistner, KarinThe perspective of energy-efficient and tunable functional magnetic nanostructures has triggered research efforts in the fields of voltage control of magnetism and spintronics. We investigate the magnetotransport properties of nanocomposite iron oxide/iron thin films with a nominal iron thickness of 5-50 nm and find a positive magnetoresistance at small thicknesses. The highest magnetoresistance was found for 30 nm Fe with +1.1% at 3 T. This anomalous behavior is attributed to the presence of Fe3O4-Fe nanocomposite regions due to grain boundary oxidation. At the Fe3O4/Fe interfaces, spin-polarized electrons in the magnetite can be scattered and reoriented. A crossover to negative magnetoresistance (-0.11%) is achieved at a larger thickness (>40 nm) when interface scattering effects become negligible as more current flows through the iron layer. Electrolytic gating of this system induces voltage-triggered redox reactions in the Fe3O4 regions and thereby enables voltage-tuning of the magnetoresistance with the locally oxidized regions as the active tuning elements. In the low-magnetic-field region (<1 T), a crossover from positive to negative magnetoresistance is achieved by a voltage change of only 1.72 V. At 3 T, a relative change of magnetoresistance about -45% during reduction was achieved for the 30 nm Fe sample. The present low-voltage approach signifies a step forward to practical and tunable room-temperature magnetoresistance-based nanodevices, which can boost the development of nanoscale and energy-efficient magnetic field sensors with high sensitivity, magnetic memories, and magnetoelectric devices in general. Copyright © 2020 American Chemical Society.
- ItemMethane as a selectivity booster in the arc-discharge synthesis of endohedral fullerenes: Selective synthesis of the single-molecule magnet Dy2TiC@C80and Its Congener Dy2TiC2@C80(Hoboken, NJ : Wiley, 2015) Junghans, Katrin; Schlesier, Christin; Kostanyan, Aram; Samoylova, Nataliya A.; Deng, Qingming; Rosenkranz, Marco; Schiemenz, Sandra; Westerström, Rasmus; Greber, Thomas; Büchner, Bernd; Greber, Thomas; Popov, Alexey A.The use of methane as a reactive gas dramatically increases the selectivity of the arc‐discharge synthesis of M‐Ti‐carbide clusterfullerenes (M=Y, Nd, Gd, Dy, Er, Lu). Optimization of the process parameters allows the synthesis of Dy2TiC@C80‐I and its facile isolation in a single chromatographic step. A new type of cluster with an endohedral acetylide unit, M2TiC2@C80, is discovered along with the second isomer of M2TiC@C80. Dy2TiC@C80‐(I,II) and Dy2TiC2@C80‐I are shown to be single‐molecule magnets (SMM), but the presence of the second carbon atom in the cluster Dy2TiC2@C80 leads to substantially poorer SMM properties.