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    Topological Hall effect in thin films of Mn1.5PtSn
    (College Park, MD : APS, 2019) Swekis, Peter; Markou, Anastasios; Kriegner, Dominik; Gayles, Jacob; Schlitz, Richard; Schnelle, Walter; Goennenwein, Sebastian T.B.; Felser, Claudia
    Spin chirality in metallic materials with noncoplanar magnetic order can give rise to a Berry phase induced topological Hall effect. Here, we report the observation of a large topological Hall effect in high-quality films of Mn1.5PtSn that were grown by means of magnetron sputtering on MgO(001). The topological Hall resistivity is present up to μ0H≈4T below the spin reorientation transition temperature, Ts=185 K. We find that the maximum topological Hall resistivity is of comparable magnitude as the anomalous Hall resistivity. Owing to the size, the topological Hall effect is directly evident prior to the customarily performed subtraction of magnetometry data. Further, we underline the robustness of the topological Hall effect in Mn2-xPtSn by extracting the effect for multiple stoichiometries (x=0.5,0.25,0.1) and film thicknesses (t=104,52,35 nm) with maximum topological Hall resistivities between 0.76 and 1.55μΩcm at 150 K. © 2019 authors. Published by the American Physical Society. Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.
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    Imaging and writing magnetic domains in the non-collinear antiferromagnet Mn3Sn
    ([London] : Nature Publishing Group UK, 2019) Reichlova, Helena; Janda, Tomas; Godinho, Joao; Markou, Anastasios; Kriegner, Dominik; Schlitz, Richard; Zelezny, Jakub; Soban, Zbynek; Bejarano, Mauricio; Schultheiss, Helmut; Nemec, Petr; Jungwirth, Tomas; Felser, Claudia; Wunderlich, Joerg; Goennenwein, Sebastian T. B.
    Non-collinear antiferromagnets are revealing many unexpected phenomena and they became crucial for the field of antiferromagnetic spintronics. To visualize and prepare a well-defined domain structure is of key importance. The spatial magnetic contrast, however, remains extraordinarily difficult to be observed experimentally. Here, we demonstrate a magnetic imaging technique based on a laser induced local thermal gradient combined with detection of the anomalous Nernst effect. We employ this method in one the most actively studied representatives of this class of materials—Mn3Sn. We demonstrate that the observed contrast is of magnetic origin. We further show an algorithm to prepare a well-defined domain pattern at room temperature based on heat assisted recording principle. Our study opens up a prospect to study spintronics phenomena in non-collinear antiferromagnets with spatial resolution.
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    Antiskyrmions and their electrical footprint in crystalline mesoscale structures of Mn1.4PtSn
    (London : Springer Nature, 2022) Winter, Moritz; Goncalves, Francisco J. T.; Soldatov, Ivan; He, Yangkun; Zúñiga Céspedes, Belén E.; Milde, Peter; Lenz, Kilian; Hamann, Sandra; Uhlarz, Marc; Vir, Praveen; König, Markus; Moll, Philip J. W.; Schlitz, Richard; Goennenwein, Sebastian T. B.; Eng, Lukas M.; Schäfer, Rudolf; Wosnitza, Joachim; Felser, Claudia; Gayles, Jacob; Helm, Toni
    Skyrmionic materials hold the potential for future information technologies, such as racetrack memories. Key to that advancement are systems that exhibit high tunability and scalability, with stored information being easy to read and write by means of all-electrical techniques. Topological magnetic excitations such as skyrmions and antiskyrmions, give rise to a characteristic topological Hall effect. However, the electrical detection of antiskyrmions, in both thin films and bulk samples has been challenging to date. Here, we apply magneto-optical microscopy combined with electrical transport to explore the antiskyrmion phase as it emerges in crystalline mesoscale structures of the Heusler magnet Mn1.4PtSn. We reveal the Hall signature of antiskyrmions in line with our theoretical model, comprising anomalous and topological components. We examine its dependence on the vertical device thickness, field orientation, and temperature. Our atomistic simulations and experimental anisotropy studies demonstrate the link between antiskyrmions and a complex magnetism that consists of competing ferromagnetic, antiferromagnetic, and chiral exchange interactions, not captured by micromagnetic simulations.