2010, Radziunas, Mindaugas, Vladimirov, Andrei G., Viktorov, Evgeny A., Fiol, Gerrit, Schmeckebier, Holger, Bimberg, Dieter

We consider a mode-locked quantum-dot edge-emitting semiconductor laser consisting of a reverse biased saturable absorber and a forward biased amplifying section. To describe the dynamics of this laser we use the traveling wave model taking into account carrier exchange processes between a reservoir and the quantum dots. A comprehensive parameter study is presented and an analysis of mode-locking pulse broadening with an increase of injection current is performed. The results of our theoretical analysis are supported by experimental data demonstrating a strong pulse asymmetry in a monolithic two section quantum dot mode-locked laser

2012, Arkhipov, Rostislav, Pimenov, Alexander, Radziunas, Mindaugas, Vladimirov, Andrei G., Arsenjevi´c, Dejan, Rachinskii, Dmitrii, Schmeckebier, Holger, Bimberg, Dieter

Hybrid mode-locking in a two section edge-emitting semiconductor laser is studied numerically and analytically using a set of three delay differential equations. In this set the external RF signal applied to the saturable absorber section is modeled by modulation of the carrier relaxation rate in this section. Estimation of the locking range where the pulse repetition frequency is synchronized with the frequency of the external modulation is performed numerically and the effect of the modulation shape and amplitude on this range is investigated. Asymptotic analysis of the dependence of the locking range width on the laser parameters is carried out in the limit of small signal modulation. Our numerical simulations indicate that hybrid mode-locking can be also achieved in the cases when the frequency of the external modulation is approximately twice larger and twice smaller than the pulse repetition frequency of the free running passively mode-locked laser fP . Finally, we provide an experimental demonstration of hybrid mode-locking in a 20 GHz quantum-dot laser with the modulation frequency of the reverse bias applied to the absorber section close to fP / 2.

2010, Radziunas, Mindaugas, Vladimirov, Andrei G., Viktorov, Evgeny A., Fiol, Gerrit, Schmeckebier, Holger, Birnmberg, Dieter

We describe the formation of a strong pulse asymmetry in mode-locked quantum-dot edge-emitting two-section semiconductor lasers. A mode decomposition technique reveals the role of the superposition of different modal groups. The results of theoretical analysis are supported by experimental data.