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Artificial micro-cinderella based on self-propelled micromagnets for the active separation of paramagnetic particles

2013, Zhao, G., Wang, H., Sanchez, S., Schmidt, O.G., Pumera, M.

In this work, we will show that ferromagnetic microjets can pick-up paramagnetic beads while not showing any interaction with diamagnetic silica microparticles for the active separation of microparticles in solution.

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Disturbing-free determination of yeast concentration in DI water and in glucose using impedance biochips

2020, Kiani, M., Du, N., Vogel, M., Raff, J., Hübner, U., Skorupa, I., Bürger, D., Schulz, S.E., Schmidt, O.G., Blaschke, D., Schmidt, H.

Deionized water and glucose without yeast and with yeast (Saccharomyces cerevisiae) of optical density OD600 that ranges from 4 to 16 has been put in the ring electrode region of six different types of impedance biochips and impedance has been measured in dependence on the added volume (20, 21, 22, 23, 24, 25 µL). The measured impedance of two out of the six types of biochips is strongly sensitive to the addition of both liquid without yeast and liquid with yeast and modelled impedance reveals a linear relationship between the impedance model parameters and yeast concentration. The presented biochips allow for continuous impedance measurements without interrupting the cultivation of the yeast. A multiparameter fit of the impedance model parameters allows for determining the concentration of yeast (cy) in the range from cy = 3.3 × 107 to cy = 17 × 107 cells/mL. This work shows that independent on the liquid, i.e., DI water or glucose, the impedance model parameters of the two most sensitive types of biochips with liquid without yeast and with liquid with yeast are clearly distinguishable for the two most sensitive types of biochips.

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Solid-state ensemble of highly entangled photon sources at rubidium atomic transitions

2017, Keil, R., Zopf, M., Chen, Y., Höfer, B., Zhang, J., Ding, F., Schmidt, O.G.

Semiconductor InAs/GaAs quantum dots grown by the Stranski-Krastanov method are among the leading candidates for the deterministic generation of polarization-entangled photon pairs. Despite remarkable progress in the past 20 years, many challenges still remain for this material, such as the extremely low yield, the low degree of entanglement and the large wavelength distribution. Here, we show that with an emerging family of GaAs/AlGaAs quantum dots grown by droplet etching and nanohole infilling, it is possible to obtain a large ensemble of polarization-entangled photon emitters on a wafer without any post-growth tuning. Under pulsed resonant two-photon excitation, all measured quantum dots emit single pairs of entangled photons with ultra-high purity, high degree of entanglement and ultra-narrow wavelength distribution at rubidium transitions. Therefore, this material system is an attractive candidate for the realization of a solid-state quantum repeater - among many other key enabling quantum photonic elements.

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Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots

2017, Huber, D., Reindl, M., Huo, Y., Huang, H., Wildmann, J.S., Schmidt, O.G., Rastelli, A., Trotta, R.

The development of scalable sources of non-classical light is fundamental to unlocking the technological potential of quantum photonics. Semiconductor quantum dots are emerging as near-optimal sources of indistinguishable single photons. However, their performance as sources of entangled-photon pairs are still modest compared to parametric down converters. Photons emitted from conventional Stranski-Krastanov InGaAs quantum dots have shown non-optimal levels of entanglement and indistinguishability. For quantum networks, both criteria must be met simultaneously. Here, we show that this is possible with a system that has received limited attention so far: GaAs quantum dots. They can emit triggered polarization-entangled photons with high purity (g (2) (0) = 0.002±0.002), high indistinguishability (0.93±0.07 for 2 ns pulse separation) and high entanglement fidelity (0.94±0.01). Our results show that GaAs might be the material of choice for quantum-dot entanglement sources in future quantum technologies.