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- ItemPulsed laser deposition of thick BaHfO3-doped YBa 2Cu307-δ films on highly alloyed textured Ni-W tapes(Bristol : Institute of Physics Publishing, 2014) Sieger, M.; Hänisch, J.; Iida, K.; Gaitzsch, U.; Rodig, C.; Schultz, L.; Holzapfel, B.; Hühne, R.YBa2Cu3O7-δ (YBCO) films with a thickness of up to 3 μm containing nano-sized BaHfO3 (BHO) have been grown on Y2O3/Y-stabilized ZrO2/CeO 2 buffered Ni-9at% W tapes by pulsed laser deposition (PLD). Structural characterization by means of X-ray diffraction confirmed that the YBCO layer grew epitaxial. A superconducting transition temperature T c of about 89 K with a transition width of 1 K was determined, decreasing with increasing BHO content. Critical current density in self-field and at 0.3 T increased with increasing dopant level.
- ItemCombinatorial synthesis of (YxGd1-x)Ba2Cu3Ox superconducting thin films(Amsterdam [u.a.] : Elsevier, 2012) Kirchner, A.; Erbe, M.; Freudenberg, T.; Hühne, R.; Feys, J.; Van Driessche, I.; Schultz, L.; Holzapfel, B.Environmentally friendly water-based YBa2Cu3Ox (YBCO) and GdBa2Cu3Ox (GdBCO) precursor solutions were synthesized to realize thin films by chemical solution deposition. Pure YBCO and GdBCO precursor solutions were used for ink plotting on SrTiO3 substrates and subsequent thermal treatment at the corresponding crystallization temperature. Phase formation of Gd123 requires a higher crystallization temperature of 840 °C compared to the Y123 phase. The critical temperature of YBCO films is about 92 K with a sharp transition into the superconducting state. Micro liter sized ink volumes of YBCO and GdBCO were successfully mixed for two-dimensional ink plotting of a (YxGd1-x)Ba2Cu3Ox film library. A homogeneous surface and no indication of a-axis growth were found in all mixed films.
- ItemThe Bain library: A Cu-Au buffer template for a continuous variation of lattice parameters in epitaxial films(New York : American Institute of Physics, 2014) Kauffmann-Weiss, S.; Hamann, S.; Reichel, L.; Siegel, A.; Alexandrakis, V.; Heller, R.; Schultz, L.; Ludwig, A.; Fähler, S.Smallest variations of the lattice parameter result in significant changes in material properties. Whereas in bulk, lattice parameters can only be changed by composition or temperature, coherent epitaxial growth of thin films on single crystals allows adjusting the lattice parameters independently. Up to now only discrete values were accessible by using different buffer or substrate materials. We realize a lateral variation of in-plane lattice parameters using combinatorial film deposition of epitaxial Cu-Au on a 4-in. Si wafer. This template gives the possibility to adjust the in-plane lattice parameter over a wide range from 0.365 nm up to 0.382 nm.