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- Item(+)-{1,2-Bis[(2R,5R)-2,5-diethyl-phospho-lan-1-yl]ethane- κ2 P,P′}(≠4-cyclo-octa-1,5-diene)rhodium(I) tetra-fluoridoborate(Chester : International Union of Crystallography, 2010) Schulz, S.; Fischer, C.; Drexler, H.-J.; Heller, D.The title compound, [Rh(C8H12)(C18H 36P2)]BF4, exhibits a rhodium(I) complex cation with a bidentate bis-phosphine ligand and a bidentate 2, 2-coordinated cyclo-octa-1,5-diene ligand. The ligands form a slightly distorted square-planar coordination environment for the Rh(I) atom. An intra-molecular P-Rh-P bite angle of 83.91 (2)° is observed. The dihedral angle between the P - Rh - P and the X - Rh - X planes (X is the centroid of a double bond) is 14.0 (1)°. The BF4 anion is disordered over two positions in a 0.515 (7):0.485 (7) ratio.
- ItemMultiscale simulations of the electronic structure of III-nitride quantum wells with varied indium content: Connecting atomistic and continuum-based models(Melville, NY : American Inst. of Physics, 2021) Chaudhuri, D.; O’Donovan, M.; Streckenbach, T.; Marquardt, O.; Farrell, P.; Patra, S.K.; Koprucki, T.; Schulz, S.Carrier localization effects in III-N heterostructures are often studied in the frame of modified continuum-based models utilizing a single-band effective mass approximation. However, there exists no comparison between the results of a modified continuum model and atomistic calculations on the same underlying disordered energy landscape. We present a theoretical framework that establishes a connection between atomistic tight-binding theory and continuum-based electronic structure models, here a single-band effective mass approximation, and provide such a comparison for the electronic structure of (In,Ga)N quantum wells. In our approach, in principle, the effective masses are the only adjustable parameters since the confinement energy landscape is directly obtained from tight-binding theory. We find that the electronic structure calculated within effective mass approximation and the tight-binding model differ noticeably. However, at least in terms of energy eigenvalues, an improved agreement between the two methods can be achieved by adjusting the band offsets in the continuum model, enabling, therefore, a recipe for constructing a modified continuum model that gives a reasonable approximation of the tight-binding energies. Carrier localization characteristics for energetically low lying, strongly localized states differ, however, significantly from those obtained using the tight-binding model. For energetically higher lying, more delocalized states, good agreement may be achieved. Therefore, the atomistically motivated continuum-based single-band effective mass model established provides a good, computationally efficient alternative to fully atomistic investigations, at least at when targeting questions related to higher temperatures and carrier densities in (In,Ga)N systems.
- Item(+)-{1,2-Bis[(2R,5R)-2,5-dimethyl-phospho-lan-1-yl]ethane- κ2 P,P′}(η4-cyclo-octa-1,5-diene) rhodium(I) tetra-fluorido-borate(Chester : International Union of Crystallography, 2010) Schulz, S.; Drexler, H.-J.; Heller, D.The title compound, [Rh(C8H12)(C14H 28P2)]BF4, exhibits a rhodium(I) complex cation with a bidentate bis-phosphine ligand and a bidentate η2, η2-coordinated cyclo-octa-1,5-diene. Together the ligands create a slightly distorted square-planar cordination environment for the Rh(I) atom. There are three mol-ecules in the asymmetric unit and intra-molecular P - Rh - P bite angles of 82.78 (5), 82.97 (6) and 83.09 (5)° are observed. The dihedral angles between the P - Rh - P and the X - Rh - X planes (X is the centroid of a double bond) are 14.7 (1), 14.8 (1) and 15.3 (1)°. The structure exhibits disorder of one cyclo-octa-diene ligand as well as one BF4 anion.
- ItemEmerging 2D-ferromagnetism and strong spin-orbit coupling at the surface of valence-fluctuating EuIr2Si2(London : Nature Publishing Group, 2019) Schulz, S.; Nechaev, I.A.; Güttler, M.; Poelchen, G.; Generalov, A.; Danzenbächer, S.; Chikina, A.; Seiro, S.; Kliemt, K.; Vyazovskaya, A.Y.; Kim, T.K.; Dudin, P.; Chulkov, E.V.; Laubschat, C.; Krasovskii, E.E.; Geibel, C.; Krellner, C.; Kummer, K.; Vyalikh, D.V.The development of materials that are non-magnetic in the bulk but exhibit two-dimensional (2D) magnetism at the surface is at the core of spintronics applications. Here, we present the valence-fluctuating material EuIr2Si2, where in contrast to its non-magnetic bulk, the Si-terminated surface reveals controllable 2D ferromagnetism. Close to the surface the Eu ions prefer a magnetic divalent configuration and their large 4f moments order below 48 K. The emerging exchange interaction modifies the spin polarization of the 2D surface electrons originally induced by the strong Rashba effect. The temperature-dependent mixed valence of the bulk allows to tune the energy and momentum size of the projected band gaps to which the 2D electrons are confined. This gives an additional degree of freedom to handle spin-polarized electrons at the surface. Our findings disclose valence-fluctuating rare-earth based materials as a very promising basis for the development of systems with controllable 2D magnetic properties which is of interest both for fundamental science and applications.
- ItemRobust and tunable itinerant ferromagnetism at the silicon surface of the antiferromagnet GdRh2Si2(London : Nature Publishing Group, 2016) Güttler, M.; Generalov, A.; Otrokov, M.M.; Kummer, K.; Kliemt, K.; Fedorov, A.; Chikina, A.; Danzenbächer, S.; Schulz, S.; Chulkov, E.V.; Koroteev, Yu. M.; Caroca-Canales, N.; Shi, M.; Radovic, M.; Geibel, C.; Laubschat, C.; Dudin, P.; Kim, T.K.; Hoesch, M.; Krellner, C.; Vyalikh, D.V.Spin-polarized two-dimensional electron states (2DESs) at surfaces and interfaces of magnetically active materials attract immense interest because of the idea of exploiting fermion spins rather than charge in next generation electronics. Applying angle-resolved photoelectron spectroscopy, we show that the silicon surface of GdRh2Si2 bears two distinct 2DESs, one being a Shockley surface state, and the other a Dirac surface resonance. Both are subject to strong exchange interaction with the ordered 4f-moments lying underneath the Si-Rh-Si trilayer. The spin degeneracy of the Shockley state breaks down below ~90 K, and the splitting of the resulting subbands saturates upon cooling at values as high as ~185 meV. The spin splitting of the Dirac state becomes clearly visible around ~60 K, reaching a maximum of ~70 meV. An abrupt increase of surface magnetization at around the same temperature suggests that the Dirac state contributes significantly to the magnetic properties at the Si surface. We also show the possibility to tune the properties of 2DESs by depositing alkali metal atoms. The unique temperature-dependent ferromagnetic properties of the Si-terminated surface in GdRh2Si2 could be exploited when combined with functional adlayers deposited on top for which novel phenomena related to magnetism can be anticipated.