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    Evaluation of surface cleaning procedures for CTGS substrates for SAW technology with XPS
    (Basel : MDPI, 2017) Brachmann, Erik; Seifert, Marietta; Oswald, Steffen; Menzel, Siegfried B.; Gemming, Thomas
    A highly efficient and reproducible cleaning procedure of piezoelectric substrates is essential in surface acoustic waves (SAW) technology to fabricate high-quality SAW devices, especially for new applications such SAW sensors wherein new materials for piezoelectric substrates and interdigital transducers are used. Therefore, the development and critical evaluation of cleaning procedures for each material system that is under consideration becomes crucial. Contaminants like particles or the presence of organic/inorganic material on the substrate can dramatically influence and alter the properties of the thin film substrate composite, such as wettability, film adhesion, film texture, and so on. In this article, focus is given to different cleaning processes like SC-1 and SC-2, UV-ozone treatment, as well as cleaning by first-contact polymer Opticlean, which are applied for removal of contaminants from the piezoelectric substrate Ca 3 TaGa 3 Si 2 O 14 . By means of X-ray photoelectron spectroscopy, the presence of the most critical contaminants such as carbon, sodium, and iron removed through different cleaning procedures were studied and significant differences were observed between the outcomes of these procedures. Based on these results, a two-step cleaning process, combining SC-1 at a reduced temperature at 30 ∘ C instead of 80 ∘ C and a subsequent UV-ozone cleaning directly prior to deposition of the metallization, is suggested to achieve the lowest residual contamination level.
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    XPS chemical state analysis of sputter depth profiling measurements for annealed TiAl-SiO2 and TiAl-W layer stacks
    (Chichester [u.a.] : Wiley, 2020) Oswald, Steffen; Lattner, Eric; Seifert, Marietta
    For the application of surface acoustic wave sensors at high temperatures, both a high-temperature stable piezoelectric substrate and a suitable metallization for the electrodes are needed. Our current attempt is to use TiAl thin films as metallization because this material is also known to be high temperature stable. In this study, Ti/Al multilayers and Ti-Al alloy layers were prepared in combination with an SiO2 cover layer or a W barrier layer at the interface to the substrate (thermally oxidized Si or Ca3TaGa3Si2O14) as an oxidation protection. To form the high-temperature stable γ-TiAl phase and to test the thermal stability of the layer systems, thermal treatments were done in vacuum at several temperatures. We used X-ray photoelectron spectroscopy (XPS) sputter depth-profiling to investigate the film composition and oxidation behavior. In this paper, we demonstrate how the semiautomatic peak fitting can help to extract beside the elemental information also the chemical information from the measured depth profiles. © 2020 The Authors. Surface and Interface Analysis published by John Wiley & Sons Ltd