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Author: Sivakov, Vladimir × DDC: 530 ×

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    XPS investigations of MOCVD tin oxide thin layers on Si nanowires array
    (Amsterdam : Elsevier, 2018) Turishchev, S.Yu.; Chuvenkova, Olga; Parinova, V.E.; Koyuda, D.A.; Chumakov, Ratibor G.; Presselt, Martin; Schleusener, Alexander; Sivakov, Vladimir
    Tin oxide thin layers were grown by metal-organic chemical vapor deposition technique on the top-down nanostructured silicon nanowires array obtained by metal-assisted wet-chemical technique from single crystalline silicon wafers. The composition of the formed layers were studied by high-resolution X-ray photoelectron spectroscopy of tin (Sn 3d) and oxygen (O 1 s) atoms core levels. The ion beam etching was applied to study the layers depth composition profiles. The composition studies of grown tin oxide layers is shown that the surface of layers contains tin dioxide, but the deeper part contains intermediate tin dioxide and metallic tin phases.
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    Thermally induced evolution of the structure and optical properties of silicon nanowires
    (Amsterdam [u.a.] : Elsevier, 2020) Mussabek, Gauhar; Lysenko, Vladimir; Yermukhamed, Dana; Sivakov, Vladimir; Yu. Timoshenko, Victor
    In the present paper, we report on the investigation of thermal annealing (TA) effect on structural and optical properties of crystalline silicon nanowires produced by metal-assisted chemical etching approach. In particular, the impact of TA on nanowire length, relative volume and size distribution of voids is described in terms of Lifshitz-Slyozov-Wagner theory considering the TA induced Oswald ripening in the SiNW arrays. It was also found that TA leads to a decrease of the SiNWs total reflection in the wide UV–VIS-IR spectral range. The reported effects can be used for tuning of crystalline SiNWs arrays in view of their further applications in photonics related fields. © 2020 The Authors
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    Synchrotron studies of top-down grown silicon nanowires
    (Amsterdam : Elsevier, 2018) Turishchev, S.Yu.; Parinova, V.E.; Nesterov, D.N.; Koyuda, D.A.; Sivakov, Vladimir; Schleusener, Alexander; Terekhov, V.A.
    Morphology of the top-down grown silicon nanowires obtained by metal-assisted wet-chemical approach on silicon substrates with different resistance were studied by scanning electron microscopy. Obtained arrays of compact grown Si nanowires were a subject for the high resolution electronic structures studies by X-ray absorption near edge structure technique performed with the usage of high intensity synchrotron radiation of the SRC storage ring of the University of Wisconsin-Madison. The different oxidation rates were found by investigation of silicon atoms local surrounding specificity of the highly developed surface and near surface layer that is not exceeded 70 nm. Flexibility of the wires arrays surface morphology and its composition is demonstrated allowing smoothly form necessary surface oxidation rate and using Si nanowires as a useful matrixes for a wide range of further functionalization.