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Author: Skorupa, Ilona × DDC: 620 ×

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    P-N junction-based Si biochips with ring electrodes for novel biosensing applications
    (Basel : MDPI, 2019) Kiani, Mahdi; Du, Nan; Vogel, Manja; Raff, Johannes; Hübner, Uwe; Skorupa, Ilona; Bürger, Danilo; Schulz, Stefan E.; Schmidt, Oliver G.; Schmidt, Heidemarie
    In this work, we report on the impedance of p-n junction-based Si biochips with gold ring top electrodes and unstructured platinum bottom electrodes which allows for counting target biomaterial in a liquid-filled ring top electrode region. The systematic experiments on p-n junction-based Si biochips fabricated by two different sets of implantation parameters (i.e. biochips PS5 and BS5) are studied, and the comparable significant change of impedance characteristics in the biochips in dependence on the number of bacteria suspension, i.e., Lysinibacillus sphaericus JG-A12, in Deionized water with an optical density at 600 nm from OD600 = 4–16 in the electrode ring region is demonstrated. Furthermore, with the help of the newly developed two-phase electrode structure, the modeled capacitance and resistance parameters of the electrical equivalent circuit describing the p-n junction-based biochips depend linearly on the number of bacteria in the ring top electrode region, which successfully proves the potential performance of p-n junction-based Si biochips in observing the bacterial suspension. The proposed p-n junction-based biochips reveal perspective applications in medicine and biology for diagnosis, monitoring, management, and treatment of diseases.In this work, we report on the impedance of p-n junction-based Si biochips with gold ring top electrodes and unstructured platinum bottom electrodes which allows for counting target biomaterial in a liquid-filled ring top electrode region. The systematic experiments on p-n junction-based Si biochips fabricated by two different sets of implantation parameters (i.e. biochips PS5 and BS5) are studied, and the comparable significant change of impedance characteristics in the biochips in dependence on the number of bacteria suspension, i.e., Lysinibacillus sphaericus JG-A12, in Deionized water with an optical density at 600 nm from OD600 = 4–16 in the electrode ring region is demonstrated. Furthermore, with the help of the newly developed two-phase electrode structure, the modeled capacitance and resistance parameters of the electrical equivalent circuit describing the p-n junction-based biochips depend linearly on the number of bacteria in the ring top electrode region, which successfully proves the potential performance of p-n junction-based Si biochips in observing the bacterial suspension. The proposed p-n junction-based biochips reveal perspective applications in medicine and biology for diagnosis, monitoring, management, and treatment of diseases.
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    Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes
    (London : Nature Publishing Group, 2015) You, Tiangui; Ou, Xin; Niu, Gang; Bärwolf, Florian; Li, Guodong; Du, Nan; Bürger, Danilo; Skorupa, Ilona; Jia, Qi; Yu, Wenjie; Wang, Xi; Schmidt, Oliver G.; Schmidt, Heidemarie
    BiFeO3 based MIM structures with Ti-implanted Pt bottom electrodes and Au top electrodes have been fabricated on Sapphire substrates. The resulting metal-insulator-metal (MIM) structures show bipolar resistive switching without an electroforming process. It is evidenced that during the BiFeO3 thin film growth Ti diffuses into the BiFeO3 layer. The diffused Ti effectively traps and releases oxygen vacancies and consequently stabilizes the resistive switching in BiFeO3 MIM structures. Therefore, using Ti implantation of the bottom electrode, the retention performance can be greatly improved with increasing Ti fluence. For the used raster-scanned Ti implantation the lateral Ti distribution is not homogeneous enough and endurance slightly degrades with Ti fluence. The local resistive switching investigated by current sensing atomic force microscopy suggests the capability of down-scaling the resistive switching cell to one BiFeO3 grain size by local Ti implantation of the bottom electrode.