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Epitaxial growth of the first two members of the Ban +1InnO2.5 n +1Ruddlesden-Popper homologous series

2022, Hensling, Felix V. E., Smeaton, Michelle A., Show, Veronica, Azizie, Kathy, Barone, Matthew R., Kourkoutis, Lena F., Schlom, Darrell G.

We demonstrate the epitaxial growth of the first two members, and the n = ∞ member of the homologous Ruddlesden-Popper series of Ba n + 1 In n O 2.5 n + 1 of which the n = 1 member was previously unknown. The films were grown by suboxide molecular-beam epitaxy where the indium is provided by a molecular beam of indium-suboxide [In 2O (g)]. To facilitate ex situ characterization of the highly hygroscopic barium indate films, a capping layer of amorphous SiO 2 was deposited prior to air exposure. The structural quality of the films was assessed by x-ray diffraction, reflective high-energy electron diffraction, and scanning transmission electron microscopy.