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Author: Szkopek, T. × Type: Text ×

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    Tunneling current modulation in atomically precise graphene nanoribbon heterojunctions
    (London : Nature Publishing Group, 2021) Senkovskiy, B.; Nenashev, A.; Alavi, S.; Falke, Y.; Hell, M.; Bampoulis, P.; Rybkovskiy, D.; Usachov, D.; Fedorov, A.; Chernov, A.; Gebhard, F.; Meerholz, K.; Hertel, D.; Arita, M.; Okuda, T.; Miyamoto, K.; Shimada, K.; Fischer, F.; Michely, T.; Baranovskii, S.; Lindfors, K.; Szkopek, T.; Grüneis, A.
    Lateral heterojunctions of atomically precise graphene nanoribbons (GNRs) hold promise for applications in nanotechnology, yet their charge transport and most of the spectroscopic properties have not been investigated. Here, we synthesize a monolayer of multiple aligned heterojunctions consisting of quasi-metallic and wide-bandgap GNRs, and report characterization by scanning tunneling microscopy, angle-resolved photoemission, Raman spectroscopy, and charge transport. Comprehensive transport measurements as a function of bias and gate voltages, channel length, and temperature reveal that charge transport is dictated by tunneling through the potential barriers formed by wide-bandgap GNR segments. The current-voltage characteristics are in agreement with calculations of tunneling conductance through asymmetric barriers. We fabricate a GNR heterojunctions based sensor and demonstrate greatly improved sensitivity to adsorbates compared to graphene based sensors. This is achieved via modulation of the GNR heterojunction tunneling barriers by adsorbates.
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    Fluctuation-dissipation in thermoelectric sensors
    (Les-Ulis : EDP Science, 2023) Tran, N.A.M.; Dutt, A.S.; Pulumati, N.B.; Reith, H.; Hu, A.; Dumont, A.; Nielsch, K.; Tremblay, A.-M.S.; Schierning, G.; Reulet, B.; Szkopek, T.
    Thermoelectric materials exhibit correlated transport of charge and heat. The Johnson-Nyquist noise formula 4k B T R for the spectral density of voltage fluctuations accounts for fluctuations associated solely with Ohmic dissipation. Applying the fluctuation-dissipation theorem, we generalize the Johnson-Nyquist formula for thermoelectrics, finding an enhanced voltage fluctuation spectral density 4k B T R(1 + Z D T) at frequencies below a thermal cut-off frequency f T, where Z D T is the dimensionless thermoelectric device figure of merit. The origin of the enhancement in voltage noise is thermoelectric coupling of temperature fluctuations. We use a wideband , integrated thermoelectric micro-device to experimentally confirm our findings. Measuring the Z D T enhanced voltage noise, we experimentally resolve temperature fluctuations with a root mean square amplitude of at a mean temperature of 295 K. We find that thermoelectric devices can be used for thermometry with sufficient resolution to measure the fundamental temperature fluctuations described by the fluctuation-dissipation theorem.