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- ItemEnhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage(Melville, NY : American Inst. of Physics, 2016) Chabak, Kelson D.; Moser, Neil; Green, Andrew J.; Walker, Dennis E.; Tetlak, Stephen E.; Heller, Eric; Crespo, Antonio; Fitch, Robert; McCandless, Jonathan P.; Leedy, Kevin; Baldini, Michele; Wagner, Gunter; Galazka, Zbigniew; Li, Xiuling; Jessen, GreggSn-doped gallium oxide (Ga2O3) wrap-gate fin-array field-effect transistors (finFETs) were formed by top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga2O3 substrate. The fin channels have a triangular cross-section and are approximately 300 nm wide and 200 nm tall. FinFETs, with 20 nm Al2O3 gate dielectric and ∼2 μm wrap-gate, demonstrate normally-off operation with a threshold voltage between 0 and +1 V during high-voltage operation. The ION/IOFF ratio is greater than 105 and is mainly limited by high on-resistance that can be significantly improved. At VG = 0, a finFET with 21 μm gate-drain spacing achieved a three-terminal breakdown voltage exceeding 600 V without a field-plate.
- ItemThin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates(Bristol : IOP Publ., 2019) Liddy, Kyle J.; Green, Andrew J.; Hendricks, Nolan S.; Heller, Eric R.; Moser, Neil A.; Leedy, Kevin D.; Popp, Andreas; Lindquist, Miles T.; Tetlak, Stephen E.; Wagner, GünterWe report the first demonstration of self-aligned gate (SAG) β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) as a path toward eliminating source access resistance for low-loss power applications. The SAG process is implemented with a subtractively defined and etched refractory metal, such as Tungsten, combined with ion-implantation. We report experimental and modeled DC performance of a representative SAG device that achieved a maximum transconductance of 35 mS mm-1 and an on-resistance of ∼30 Ω mm with a 2.5 μm gate length. These results highlight the advantage of implant technology for SAG β-Ga2O3 MOSFETs enabling future power switching and RF devices with low parasitic resistance. © Not subject to copyright in the USA. Contribution of Wright-Patterson AFB.