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Author: Tokarska, Klaudia × Has files: Yes ×

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    Graphene transfer methods: A review
    (New York, NY [u.a.] : Springer, 2021) Ullah, Sami; Yang, Xiaoqin; Ta, Huy Q.; Hasan, Maria; Bachmatiuk, Alicja; Tokarska, Klaudia; Trzebicka, Barbara; Fu, Lei; Rummeli, Mark H.
    Graphene is a material with unique properties that can be exploited in electronics, catalysis, energy, and bio-related fields. Although, for maximal utilization of this material, high-quality graphene is required at both the growth process and after transfer of the graphene film to the application-compatible substrate. Chemical vapor deposition (CVD) is an important method for growing high-quality graphene on non-technological substrates (as, metal substrates, e.g., copper foil). Thus, there are also considerable efforts toward the efficient and non-damaging transfer of quality of graphene on to technologically relevant materials and systems. In this review article, a range of graphene current transfer techniques are reviewed from the standpoint of their impact on contamination control and structural integrity preservation of the as-produced graphene. In addition, their scalability, cost- and time-effectiveness are discussed. We summarize with a perspective on the transfer challenges, alternative options and future developments toward graphene technology.
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    Facile production of ultra-fine silicon nanoparticles
    (London : Royal Society Publishing, 2020) Tokarska, Klaudia; Shi, Qitao; Otulakowski, Lukasz; Wrobel, Pawel; Ta, Huy Quang; Kurtyka, Przemyslaw; Kordyka, Aleksandra; Siwy, Mariola; Vasylieva, Margaryta; Forys, Aleksander; Trzebick, Barbara; Bachmatiuk, Alicja; Rümmeli, Mark H.
    A facile procedure for the synthesis of ultra-fine silicon nanoparticles without the need for a Schlenk vacuum line is presented. The process consists of the production of a (HSiO1.5)n sol–gel precursor based on the polycondensation of low-cost trichlorosilane (HSiCl3), followed by its annealing and etching. The obtained materials were thoroughly characterized after each preparation step by electron microscopy, Fourier transform and Raman spectroscopy, X-ray dispersion spectroscopy, diffraction methods and photoluminescence spectroscopy. The data confirm the formation of ultra-fine silicon nanoparticles with controllable average diameters between 1 and 5 nm depending on the etching time.