2014, Ullrich, B., Singh, A.K., Bhowmick, M., Barik, P., Ariza-Flores, D., Xi, H., Tomm, J.W.

The merger of the absorption coefficient dispersion, retrieved from transmission by the modified Urbach rule introduced by Ullrich and Bouchenaki [Jpn. J. Appl. Phys. 30, L1285, 1991], with the extended Roosbroeck-Shockley relation reveals that the optical absorption in ZnO distinctively determines the photoluminescence lineshape. Additionally, the ab initio principles employed enable the accurate determination of the carrier lifetime without further specific probing techniques.

2011, Hempel, M., Tomm, J.W., Baeumler, M., Konstanzer, H., Mukherjee, J., Elsaesser, T.

Near-field properties of the emission of broad area semiconductor diode lasers under extremely high pumping of up to ∼50 times the threshold are investigated. A transition from a gain to thermally-induced index guiding is shown under operation with single pulses of 300 ns duration. At highest output powers, catastrophic optical damage is observed which is studied in conjunction with the evolution of time-averaged filamentary near-field properties. Dynamics of the process is resolved on a picosecond time scale.

2002, Tomm, J.W., Bärwolff, A., Lienau, Ch., Malyarchuk, V., Müller, R., Schwirzke-Schaaf, S., Thamm, E., Tischer, M.

[no abstract available]