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Self-organized formation of unidirectional and quasi-one-dimensional metallic Tb silicide nanowires on Si(110)

2022, Appelfeller, Stephan, Franz, Martin, Karadag, Murat, Kubicki, Milan, Zielinski, Robert, Krivenkov, Maxim, Varykhalov, Andrei, Preobrajenski, Alexei, Dähne, Mario

Terbium induced nanostructures on Si(110) and their growth are thoroughly characterized by low energy electron diffraction, scanning tunneling microscopy and spectroscopy, core-level and valence band photoelectron spectroscopy, and angle-resolved photoelectron spectroscopy. For low Tb coverage, a wetting layer forms with its surface fraction continuously decreasing with increasing Tb coverage in favor of the formation of unidirectional Tb silicide nanowires. These nanowires show high aspect ratios for high annealing temperatures or on substrates already containing Tb in the bulk. Both wetting layer and nanowires are stable for temperatures up to 750°C. In contrast to the nanowires, the wetting layer is characterized by a band gap. Thus, the metallic nanowires, which show a quasi-one-dimensional electronic band structure, are embedded in a semiconducting surrounding of wetting layer and substrate, insulating the nanowires from each other.

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Contrast Reversal in Scanning Tunneling Microscopy and Its Implications for the Topological Classification of SmB6

2020, Herrmann, Hannes, Hlawenka, Peter, Siemensmeyer, Konrad, Weschke, Eugen, Sánchez-Barriga, Jaime, Varykhalov, Andrei, Shitsevalova, Natalya Y., Dukhnenko, Anatoliy V., Filipov, Volodymyr B., Gabáni, Slavomir, Flachbart, Karol, Rader, Oliver, Sterrer, Martin, Rienks, Emile D.L.

SmB6 has recently attracted considerable interest as a candidate for the first strongly correlated topological insulator. Such materials promise entirely new properties such as correlation-enhanced bulk bandgaps or a Fermi surface from spin excitations. Whether SmB6 and its surface states are topological or trivial is still heavily disputed however, and a solution is hindered by major disagreement between angle-resolved photoemission (ARPES) and scanning tunneling microscopy (STM) results. Here, a combined ARPES and STM experiment is conducted. It is discovered that the STM contrast strongly depends on the bias voltage and reverses its sign beyond 1 V. It is shown that the understanding of this contrast reversal is the clue to resolving the discrepancy between ARPES and STM results. In particular, the scanning tunneling spectra reflect a low-energy electronic structure at the surface, which supports a trivial origin of the surface states and the surface metallicity of SmB6. © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim