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- ItemAtomically precise semiconductor-graphene and hBN interfaces by Ge intercalation(London : Nature Publishing Group, 2015) Verbitskiy, N.I.; Fedorov, A.V.; Profeta, G.; Stroppa, A.; Petaccia, L.; Senkovskiy, B.; Nefedov, A.; Wöll, C.; Usachov, D.Yu.; Vyalikh, D.V.; Yashina, L.V.; Eliseev, A.A.; Pichler, T.; Grüneis, A.The full exploration of the potential, which graphene offers to nanoelectronics requires its integration into semiconductor technology. So far the real-world applications are limited by the ability to concomitantly achieve large single-crystalline domains on dielectrics and semiconductors and to tailor the interfaces between them. Here we show a new direct bottom-up method for the fabrication of high-quality atomically precise interfaces between 2D materials, like graphene and hexagonal boron nitride (hBN), and classical semiconductor via Ge intercalation. Using angle-resolved photoemission spectroscopy and complementary DFT modelling we observed for the first time that epitaxially grown graphene with the Ge monolayer underneath demonstrates Dirac Fermions unaffected by the substrate as well as an unperturbed electronic band structure of hBN. This approach provides the intrinsic relativistic 2D electron gas towards integration in semiconductor technology. Hence, these new interfaces are a promising path for the integration of graphene and hBN into state-of-the-art semiconductor technology.
- ItemEmerging 2D-ferromagnetism and strong spin-orbit coupling at the surface of valence-fluctuating EuIr2Si2(London : Nature Publishing Group, 2019) Schulz, S.; Nechaev, I.A.; Güttler, M.; Poelchen, G.; Generalov, A.; Danzenbächer, S.; Chikina, A.; Seiro, S.; Kliemt, K.; Vyazovskaya, A.Y.; Kim, T.K.; Dudin, P.; Chulkov, E.V.; Laubschat, C.; Krasovskii, E.E.; Geibel, C.; Krellner, C.; Kummer, K.; Vyalikh, D.V.The development of materials that are non-magnetic in the bulk but exhibit two-dimensional (2D) magnetism at the surface is at the core of spintronics applications. Here, we present the valence-fluctuating material EuIr2Si2, where in contrast to its non-magnetic bulk, the Si-terminated surface reveals controllable 2D ferromagnetism. Close to the surface the Eu ions prefer a magnetic divalent configuration and their large 4f moments order below 48 K. The emerging exchange interaction modifies the spin polarization of the 2D surface electrons originally induced by the strong Rashba effect. The temperature-dependent mixed valence of the bulk allows to tune the energy and momentum size of the projected band gaps to which the 2D electrons are confined. This gives an additional degree of freedom to handle spin-polarized electrons at the surface. Our findings disclose valence-fluctuating rare-earth based materials as a very promising basis for the development of systems with controllable 2D magnetic properties which is of interest both for fundamental science and applications.
- ItemRobust and tunable itinerant ferromagnetism at the silicon surface of the antiferromagnet GdRh2Si2(London : Nature Publishing Group, 2016) Güttler, M.; Generalov, A.; Otrokov, M.M.; Kummer, K.; Kliemt, K.; Fedorov, A.; Chikina, A.; Danzenbächer, S.; Schulz, S.; Chulkov, E.V.; Koroteev, Yu. M.; Caroca-Canales, N.; Shi, M.; Radovic, M.; Geibel, C.; Laubschat, C.; Dudin, P.; Kim, T.K.; Hoesch, M.; Krellner, C.; Vyalikh, D.V.Spin-polarized two-dimensional electron states (2DESs) at surfaces and interfaces of magnetically active materials attract immense interest because of the idea of exploiting fermion spins rather than charge in next generation electronics. Applying angle-resolved photoelectron spectroscopy, we show that the silicon surface of GdRh2Si2 bears two distinct 2DESs, one being a Shockley surface state, and the other a Dirac surface resonance. Both are subject to strong exchange interaction with the ordered 4f-moments lying underneath the Si-Rh-Si trilayer. The spin degeneracy of the Shockley state breaks down below ~90 K, and the splitting of the resulting subbands saturates upon cooling at values as high as ~185 meV. The spin splitting of the Dirac state becomes clearly visible around ~60 K, reaching a maximum of ~70 meV. An abrupt increase of surface magnetization at around the same temperature suggests that the Dirac state contributes significantly to the magnetic properties at the Si surface. We also show the possibility to tune the properties of 2DESs by depositing alkali metal atoms. The unique temperature-dependent ferromagnetic properties of the Si-terminated surface in GdRh2Si2 could be exploited when combined with functional adlayers deposited on top for which novel phenomena related to magnetism can be anticipated.
- ItemControlled assembly of graphene-capped nickel, cobalt and iron silicides(London : Nature Publishing Group, 2013) Vilkov, O.; Fedorov, A.; Usachov, D.; Yashina, L.V.; Generalov, A.V.; Borygina, K.; Verbitskiy, N.I.; Grüneis, A.; Vyalikh, D.V.In-situ dendrite/metallic glass matrix composites (MGMCs) with a composition of Ti46Zr20V12Cu5Be17 exhibit ultimate tensile strength of 1510 MPa and fracture strain of about 7.6%. A tensile deformation model is established, based on the five-stage classification: (1) elastic-elastic, (2) elastic-plastic, (3) plastic-plastic (yield platform), (4) plastic-plastic (work hardening), and (5) plastic-plastic (softening) stages, analogous to the tensile behavior of common carbon steels. The constitutive relations strongly elucidate the tensile deformation mechanism. In parallel, the simulation results by a finite-element method (FEM) are in good agreement with the experimental findings and theoretical calculations. The present study gives a mathematical model to clarify the work-hardening behavior of dendrites and softening of the amorphous matrix. Furthermore, the model can be employed to simulate the tensile behavior of in-situ dendrite/MGMCs.
- ItemDivalent EuRh 2 Si 2 as a reference for the Luttinger theorem and antiferromagnetism in trivalent heavy-fermion YbRh 2 Si 2(London : Nature Publishing Group, 2019) Güttler, M.; Generalov, A.; Fujimori, S.I.; Kummer, K.; Chikina, A.; Seiro, S.; Danzenbächer, S.; Koroteev, Y.M.; Chulkov, E.V.; Radovic, M.; Shi, M.; Plumb, N.C.; Laubschat, C.; Allen, J.W.; Krellner, C.; Geibel, C.; Vyalikh, D.V.Application of the Luttinger theorem to the Kondo lattice YbRh 2 Si 2 suggests that its large 4f-derived Fermi surface (FS) in the paramagnetic (PM) regime should be similar in shape and volume to that of the divalent local-moment antiferromagnet (AFM) EuRh 2 Si 2 in its PM regime. Here we show by angle-resolved photoemission spectroscopy that paramagnetic EuRh 2 Si 2 has a large FS essentially similar to the one seen in YbRh 2 Si 2 down to 1 K. In EuRh 2 Si 2 the onset of AFM order below 24.5 K induces an extensive fragmentation of the FS due to Brillouin zone folding, intersection and resulting hybridization of the Fermi-surface sheets. Our results on EuRh 2 Si 2 indicate that the formation of the AFM state in YbRh 2 Si 2 is very likely also connected with similar changes in the FS, which have to be taken into account in the controversial analysis and discussion of anomalies observed at the quantum critical point in this system.