Filters

2017 - 20203

More filters

20213
Reset filters

Settings

Author: Wang, Tao × DDC: 530 ×

Search Results

Now showing 1 - 3 of 3
  • Thumbnail Image
    Item
    Phonon-Polaritonic Bowtie Nanoantennas: Controlling Infrared Thermal Radiation at the Nanoscale
    (Washington, DC : ACS Publications, 2017) Wang, Tao; Li, Peining; Chigrin, Dmitry N.; Giles, Alexander J.; Bezares, Francisco J.; Glembocki, Orest J.; Caldwell, Joshua D.; Taubner, Thomas
    A conventional thermal emitter exhibits a broad emission spectrum with a peak wavelength depending upon the operation temperature. Recently, narrowband thermal emission was realized with periodic gratings or single microstructures of polar crystals supporting distinct optical modes. Here, we exploit the coupling of adjacent phonon-polaritonic nanostructures, demonstrating experimentally that the nanometer-scale gaps can control the thermal emission frequency while retaining emission line widths as narrow as 10 cm-1. This was achieved by using deeply subdiffractional bowtie-shaped silicon carbide nanoantennas. Infrared far-field reflectance spectroscopy, near-field optical nanoimaging, and full-wave electromagnetic simulations were employed to prove that the thermal emission originates from strongly localized surface phonon-polariton resonances of nanoantenna structures. The observed narrow emission line widths and exceptionally small modal volumes provide new opportunities for the user-design of near- and far-field radiation patterns for advancements in infrared spectroscopy, sensing, signaling, communications, coherent thermal emission, and infrared photodetection. © 2017 American Chemical Society.
  • Thumbnail Image
    Item
    Single-photon emission from isolated monolayer islands of InGaN
    (London : Nature Publishing Group, 2020) Sun, Xiaoxiao; Wang, Ping; Wang, Tao; Chen, Ling; Chen, Zhaoying; Gao, Kang; Aoki, Tomoyuki; Li, Mo; Zhang, Jian; Schulz, Tobias; Albrecht, Martin; Ge, Weikun; Arakawa, Yasuhiko; Shen, Bo; Holmes, Mark; Wang, Xinqiang
    We identify and characterize a novel type of quantum emitter formed from InGaN monolayer islands grown using molecular beam epitaxy and further isolated via the fabrication of an array of nanopillar structures. Detailed optical analysis of the characteristic emission spectrum from the monolayer islands is performed, and the main transmission is shown to act as a bright, stable, and fast single-photon emitter with a wavelength of ~400 nm. © 2020, The Author(s).
  • Thumbnail Image
    Item
    The 2020 UV emitter roadmap
    (Bristol : IOP Publ., 2020) Amano, Hiroshi; Collazo, Ramón; De Santi, Carlo; Einfeldt, Sven; Funato, Mitsuru; Glaab, Johannes; Hagedorn, Sylvia; Hirano, Akira; Hirayama, Hideki; Ishii, Ryota; Kashima, Yukio; Kawakami, Yoichi; Kirste, Ronny; Kneissl, Michael; Martin, Robert; Mehnke, Frank; Meneghini, Matteo; Ougazzaden, Abdallah; Parbrook, Peter J.; Rajan, Siddharth; Reddy, Pramod; Römer, Friedhard; Friedhard, Jan; Sarkar, Biplab; Scholz, Ferdinand; Schowalter, Leo J; Shields, Philip; Sitar, Zlatko; Sulmoni, Luca; Wang, Tao; Wernicke, Tim; Weyers, Markus; Witzigmann, Bernd; Wu, Yuh-Renn; Wunderer, Thomas; Zhang, Yuewei
    Solid state UV emitters have many advantages over conventional UV sources. The (Al,In,Ga)N material system is best suited to produce LEDs and laser diodes from 400 nm down to 210 nm - due to its large and tuneable direct band gap, n- and p-doping capability up to the largest bandgap material AlN and a growth and fabrication technology compatible with the current visible InGaN-based LED production. However AlGaN based UV-emitters still suffer from numerous challenges compared to their visible counterparts that become most obvious by consideration of their light output power, operation voltage and long term stability. Most of these challenges are related to the large bandgap of the materials. However, the development since the first realization of UV electroluminescence in the 1970s shows that an improvement in understanding and technology allows the performance of UV emitters to be pushed far beyond the current state. One example is the very recent realization of edge emitting laser diodes emitting in the UVC at 271.8 nm and in the UVB spectral range at 298 nm. This roadmap summarizes the current state of the art for the most important aspects of UV emitters, their challenges and provides an outlook for future developments. © 2020 IOP Publishing Ltd.