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- ItemDielectrophoretic Immobilization of Yeast Cells Using CMOS Integrated Microfluidics(Basel : MDPI AG, 2020) Ettehad, Honeyeh Matbaechi; Soltani Zarrin, Pouya; Hölzel, Ralph; Wenger, ChristianThis paper presents a dielectrophoretic system for the immobilization and separation of live and dead cells. Dielectrophoresis (DEP) is a promising and efficient investigation technique for the development of novel lab-on-a-chip devices, which characterizes cells or particles based on their intrinsic and physical properties. Using this method, specific cells can be isolated from their medium carrier or the mixture of cell suspensions (e.g., separation of viable cells from non-viable cells). Main advantages of this method, which makes it favorable for disease (blood) analysis and diagnostic applications are, the preservation of the cell properties during measurements, label-free cell identification, and low set up cost. In this study, we validated the capability of complementary metal-oxide-semiconductor (CMOS) integrated microfluidic devices for the manipulation and characterization of live and dead yeast cells using dielectrophoretic forces. This approach successfully trapped live yeast cells and purified them from dead cells. Numerical simulations based on a two-layer model for yeast cells flowing in the channel were used to predict the trajectories of the cells with respect to their dielectric properties, varying excitation voltage, and frequency.
- ItemCorrection: Interface-engineered reliable HfO2-based RRAM for synaptic simulation (Journal of Materials Chemistry C (2019) DOI: 10.1039/c9tc04880d)(London [u.a.] : RSC, 2019) Wang, Qiang; Niu, Gang; Roy, Sourav; Wang, Yankun; Zhang, Yijun; Wu, Heping; Zhai, Shijie; Bai, Wei; Shi, Peng; Song, Sannian; Song, Zhitang; Xie, Ya-Hong; Ye, Zuo-Guang; Wenger, Christian; Meng, Xiangjian; Ren, WeiThere was an error in the author list of this published article. The corresponding authors for this paper are Gang Niu (gangniu@xjtu.edu.cn) and Wei Ren (wren@mail.xjtu.edu.cn). The footnote indicating that Qiang Wang and Gang Niu contributed equally to the work was not intended. The corrected author list and notations are shown here. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers. © The Royal Society of Chemistry 2019.
- ItemDielectrophoretic immobilisation of antibodies on microelectrode arrays(Cambridge : Royal Society of Chemistry, 2013) Otto, Saskia; Kaletta, Udo; Bier, Frank F.; Wenger, Christian; Hölzel, RalphA silicon based chip device with a regular array of more than 100 000 cylindrical sub-microelectrodes has been developed for the dielectrophoretic (DEP) manipulation of nanoparticles and molecules in solution. It was fabricated by a standard CMOS (complementary metal oxide semiconductor) compatible process. The distribution of the electrical field gradient was calculated to predict the applicability of the setup. Heating due to field application was determined microscopically using a temperature sensitive fluorescent dye. Depending on voltage and frequency, temperature increase was found to be compatible with protein function. Successful field controlled immobilisation of biomolecules from solution was demonstrated with the autofluorescent protein R-phycoerythrin (RPE) and with fluorescently labelled IgG antibodies. Biological activity after DEP application was proven by immobilisation of an anti-RPE antibody and subsequent binding of RPE. These results demonstrate that the developed chip system allows the directed immobilisation of proteins onto microelectrodes by dielectrophoresis without the need for any chemical modification and that protein function is preserved. Being based on standard lithographical methods, further miniaturisation and on-chip integration of electronics towards a multiparameter single cell analysis system appear near at hand.
- ItemRadio Frequency CMOS Chem-bio Viscosity Sensors based on Dielectric Spectroscopy([Setúbal] : SCITEPRESS - Science and Technology Publications, Lda., 2017) Guha, Subhajit; Wenger, Christian; Peixoto, Nathalia; Fred, Ana; Gamboa, Hugo; Vaz, MárioThis paper presents a CMOS Radio frequency dielectric sensor platform for the detection of relative viscosity changes in a fluid sample. The operating frequency of the sensor is 12.28 GHz. This frequency range has been chosen for high signal to noise ratio and also to avoid other low frequency dispersion mechanisms for future lab on chip applications. The sensor chip has been fabricated in 250 nm BiCMOS technology of IHP. The measurements conducted to show the relative viscosity variation detection capability of the sensor chip, were based on mixtures of glycerol and water as well as glycerol and organic alcohol. The detection limit of viscosity is dependent on the permittivity contrast of the sample constituent. Therefore, it is also shown the choice of frequency inherently aids in the permittivity contrast of the sample constituents.
- ItemPerfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene(London : Nature Publishing Group, 2016) Kitzmann, Julia; Göritz, Alexander; Fraschke, Mirko; Lukosius, Mindaugas; Wenger, Christian; Wolff, Andre; Lupina, GrzegorzWe investigate the use of perfluorodecyltrichlorosilane-based self-assembled monolayer as seeding layer for chemical vapour deposition of HfO2 on large area CVD graphene. The deposition and evolution of the FDTS-based seed layer is investigated by X-ray photoelectron spectroscopy, Auger electron spectroscopy, and transmission electron microscopy. Crystalline quality of graphene transferred from Cu is monitored during formation of the seed layer as well as the HfO2 growth using Raman spectroscopy. We demonstrate that FDTS-based seed layer significantly improves nucleation of HfO2 layers so that graphene can be coated in a conformal way with HfO2 layers as thin as 10 nm. Proof-of-concept experiments on 200 mm wafers presented here validate applicability of the proposed approach to wafer scale graphene device fabrication.
- ItemGeometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance(London : Nature Publishing Group, 2016) Niu, Gang; Calka, Pauline; Auf der Maur, Matthias; Santoni, Francesco; Guha, Subhajit; Fraschke, Mirko; Hamoumou, Philippe; Gautier, Brice; Perez, Eduardo; Walczyk, Christian; Wenger, Christian; Di Carlo, Aldo; Alff, Lambert; Schroeder, ThomasFilament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the “OFF” state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies distribution and filament growth in HfO2 films. We report highly stable endurance of TiN/Ti/HfO2/Si-tip RRAM devices using a CMOS compatible nanotip method. Simulations indicate that the nanotip bottom electrode provides a local confinement for the electrical field and ionic current density; thus a nano-confinement for the oxygen vacancy distribution and nano-filament location is created by this approach. Conductive atomic force microscopy measurements confirm that the filaments form only on the nanotip region. Resistance switching by using pulses shows highly stable endurance for both ON and OFF modes, thanks to the geometric confinement of the conductive path and filament only above the nanotip. This nano-engineering approach opens a new pathway to realize forming-free RRAM devices with improved stability and reliability.
- ItemMaterial insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition(London : Nature Publishing Group, 2016) Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, ChristianWith the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.
- ItemVerbundprojekt: Neuartige Lichtquellen und Komponenten für Silizium-Photonik (SiliconLight), IHP-Teilvorhaben: MIS-Lichtemitter auf Basis von Versetzungsnetzwerken und Erweiterung einer BiCMOS-Technologie um photonische Elemente : Schlussbericht zum Vorhaben(Hannover : Technische Informationsbibliothek (TIB), 2011) Kittler, Martin; Arguirov, Tzanimir; Mchedlidze, Teimuraz; Oehme, Michael; Reiche, Manfred; Seifert, Winfried; Trushin, Maxim; Wenger, Christian; Zimmermann, Lars; Richter, Harald; Stolarek, David; Tian, Hui; Fraschke, Mirko[no abstract available]
- ItemAbhörsichere, schaltbare und integrierbare SAW-Funkmodule, Teilprojekt: Integrierte (Bi)CMOS-ICs : Schlussbericht zum Verbundprojekt(Hannover : Technische Informationsbibliothek (TIB), 2012) Wenger, Christian[no abstract available]
- ItemMaterialien für extrem hohe integrierte Kapazitäten (MaxCaps), Teilprojekt: Präparation und Charakterisierung von MIM-Kondensatoren : Schlussbericht zum Verbundprojekt(Hannover : Technische Informationsbibliothek (TIB), 2011) Wenger, Christian[no abstract available]