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- ItemEnhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier(Melville, NY : American Inst. of Physics, 2020) Piros, Eszter; Petzold, Stefan; Zintler, Alexander; Kaiser, Nico; Vogel, Tobias; Eilhardt, Robert; Wenger, Christian; Molina-Luna, Leopoldo; Alff, LambertThis work addresses the thermal stability of bipolar resistive switching in yttrium oxide-based resistive random access memory revealed through the temperature dependence of the DC switching behavior. The operation voltages, current levels, and charge transport mechanisms are investigated at 25 °C, 85 °C, and 125 °C, and show overall good temperature immunity. The set and reset voltages, as well as the device resistance in both the high and low resistive states, are found to scale inversely with increasing temperatures. The Schottky-barrier height was observed to increase from approximately 1.02 eV at 25 °C to approximately 1.35 eV at 125 °C, an uncommon behavior explained by interface phenomena. © 2020 Author(s).
- ItemTowards CMOS integrated microfluidics using dielectrophoretic immobilization(Basel : MDPI, 2019) Ettehad, Honeyeh Matbaechi; Yadav, Rahul Kumar; Guha, Subhajit; Wenger, ChristianDielectrophoresis (DEP) is a nondestructive and noninvasive method which is favorable for point-of-care medical diagnostic tests. This technique exhibits prominent relevance in a wide range of medical applications wherein the miniaturized platform for manipulation (immobilization, separation or rotation), and detection of biological particles (cells or molecules) can be conducted. DEP can be performed using advanced planar technologies, such as complementary metal-oxide-semiconductor (CMOS) through interdigitated capacitive biosensors. The dielectrophoretically immobilization of micron and submicron size particles using interdigitated electrode (IDE) arrays is studied by finite element simulations. The CMOS compatible IDEs have been placed into the silicon microfluidic channel. A rigorous study of the DEP force actuation, the IDE’s geometrical structure, and the fluid dynamics are crucial for enabling the complete platform for CMOS integrated microfluidics and detection of micron and submicron-sized particle ranges. The design of the IDEs is performed by robust finite element analyses to avoid time-consuming and costly fabrication processes. To analyze the preliminary microfluidic test vehicle, simulations were first performed with non-biological particles. To produce DEP force, an AC field in the range of 1 to 5 V (peak-to-peak) is applied to the IDE. The impact of the effective external and internal properties, such as actuating DEP frequency and voltage, fluid flow velocity, and IDE’s geometrical parameters are investigated. The IDE based system will be used to immobilize and sense particles simultaneously while flowing through the microfluidic channel. The sensed particles will be detected using the capacitive sensing feature of the biosensor. The sensing and detecting of the particles are not in the scope of this paper and will be described in details elsewhere. However, to provide a complete overview of this system, the working principles of the sensor, the readout detection circuit, and the integration process of the silicon microfluidic channel are briefly discussed. © 2019 by the authors.
- ItemA Review on Passive and Integrated Near-Field Microwave Biosensors(Basel : MDPI, 2017) Guha, Subhajit; Jamal, Farabi Ibne; Wenger, ChristianIn this paper we review the advancement of passive and integrated microwave biosensors. The interaction of microwave with biological material is discussed in this paper. Passive microwave biosensors are microwave structures, which are fabricated on a substrate and are used for sensing biological materials. On the other hand, integrated biosensors are microwave structures fabricated in standard semiconductor technology platform (CMOS or BiCMOS). The CMOS or BiCMOS sensor technology offers a more compact sensing approach which has the potential in the future for point of care testing systems. Various applications of the passive and the integrated sensors have been discussed in this review paper.
- ItemDesign and Fabrication of a BiCMOS Dielectric Sensor for Viscosity Measurements: A Possible Solution for Early Detection of COPD(Basel : MDPI, 2018) Soltani Zarrin, Pouya; Jamal, Farabi Ibne; Guha, Subhajit; Wessel, Jan; Kissinger, Dietmar; Wenger, ChristianThe viscosity variation of sputum is a common symptom of the progression of Chronic Obstructive Pulmonary Disease (COPD). Since the hydration of the sputum defines its viscosity level, dielectric sensors could be used for the characterization of sputum samples collected from patients for early diagnosis of COPD. In this work, a CMOS-based dielectric sensor for the real-time monitoring of sputum viscosity was designed and fabricated. A proper packaging for the ESD-protection and short-circuit prevention of the sensor was developed. The performance evaluation results show that the radio frequency sensor is capable of measuring dielectric constant of biofluids with an accuracy of 4.17%. Integration of this sensor into a portable system will result in a hand-held device capable of measuring viscosity of sputum samples of COPD-patients for diagnostic purposes.
- ItemAC electrokinetic immobilization of organic dye molecules(Berlin [u.a.] : Springer, 2020) Laux, Eva-Maria; Wenger, Christian; Bier, Frank F.; Hölzel, RalphThe application of inhomogeneous AC electric fields for molecular immobilization is a very fast and simple method that does not require any adaptions to the molecule’s functional groups or charges. Here, the method is applied to a completely new category of molecules: small organic fluorescence dyes, whose dimensions amount to only 1 nm or even less. The presented setup and the electric field parameters used allow immobilization of dye molecules on the whole electrode surface as opposed to pure dielectrophoretic applications, where molecules are attracted only to regions of high electric field gradients, i.e., to the electrode tips and edges. In addition to dielectrophoresis and AC electrokinetic flow, molecular scale interactions and electrophoresis at short time scales are discussed as further mechanisms leading to migration and immobilization of the molecules. [Figure not available: see fulltext.] © 2020, The Author(s).
- ItemCurrent Modulation of a Heterojunction Structure by an Ultra-Thin Graphene Base Electrode(Basel : MDPI, 2018) Alvarado Chavarin, Carlos; Strobel, Carsten; Kitzmann, Julia; Di Bartolomeo, Antonio; Lukosius, Mindaugas; Albert, Matthias; Bartha, Johann Wolfgang; Wenger, ChristianGraphene has been proposed as the current controlling element of vertical transport in heterojunction transistors, as it could potentially achieve high operation frequencies due to its metallic character and 2D nature. Simulations of graphene acting as a thermionic barrier between the transport of two semiconductor layers have shown cut-off frequencies larger than 1 THz. Furthermore, the use of n-doped amorphous silicon, (n)-a-Si:H, as the semiconductor for this approach could enable flexible electronics with high cutoff frequencies. In this work, we fabricated a vertical structure on a rigid substrate where graphene is embedded between two differently doped (n)-a-Si:H layers deposited by very high frequency (140 MHz) plasma-enhanced chemical vapor deposition. The operation of this heterojunction structure is investigated by the two diode-like interfaces by means of temperature dependent current-voltage characterization, followed by the electrical characterization in a three-terminal configuration. We demonstrate that the vertical current between the (n)-a-Si:H layers is successfully controlled by the ultra-thin graphene base voltage. While current saturation is yet to be achieved, a transconductance of ~230 μS was obtained, demonstrating a moderate modulation of the collector-emitter current by the ultra-thin graphene base voltage. These results show promising progress towards the application of graphene base heterojunction transistors.
- ItemDielectrophoretic Immobilization of Yeast Cells Using CMOS Integrated Microfluidics(Basel : MDPI AG, 2020) Ettehad, Honeyeh Matbaechi; Soltani Zarrin, Pouya; Hölzel, Ralph; Wenger, ChristianThis paper presents a dielectrophoretic system for the immobilization and separation of live and dead cells. Dielectrophoresis (DEP) is a promising and efficient investigation technique for the development of novel lab-on-a-chip devices, which characterizes cells or particles based on their intrinsic and physical properties. Using this method, specific cells can be isolated from their medium carrier or the mixture of cell suspensions (e.g., separation of viable cells from non-viable cells). Main advantages of this method, which makes it favorable for disease (blood) analysis and diagnostic applications are, the preservation of the cell properties during measurements, label-free cell identification, and low set up cost. In this study, we validated the capability of complementary metal-oxide-semiconductor (CMOS) integrated microfluidic devices for the manipulation and characterization of live and dead yeast cells using dielectrophoretic forces. This approach successfully trapped live yeast cells and purified them from dead cells. Numerical simulations based on a two-layer model for yeast cells flowing in the channel were used to predict the trajectories of the cells with respect to their dielectric properties, varying excitation voltage, and frequency.
- ItemOperando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy(London [u.a.] : Taylor & Francis, 2019) Niu, Gang; Calka, Pauline; Huang, Peng; Sharath, Sankaramangalam Ulhas; Petzold, Stefan; Gloskovskii, Andrei; Fröhlich, Karol; Zhao, Yudi; Kan, Jinfeng; Schubert, Markus Andreas; Bärwolf, Florian; Ren, Wei; Ye, Zuo-Guang; Perez, Eduardo; Wenger, Christian; Alff, Lambert; Schroeder, ThomasThe HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the microscopic physical nature of the resistive switching (RS) behavior. By using synchrotron radiation based, non-destructive and bulk-sensitive hard X-ray photoelectron spectroscopy (HAXPES), we demonstrate an operando diagnostic detection of the oxygen ‘breathing’ behavior at the oxide/metal interface, namely, oxygen migration between HfO2 and TiN during different RS periods. The results highlight the significance of oxide/metal interfaces in RRAM, even in filament-type devices. IMPACT STATEMENT: The oxygen ‘breathing’ behavior at the oxide/metal interface of filament-type resistive random access memory devices is operandoly detected using hard X-ray photoelectron spectroscopy as a diagnostic tool. © 2019, © 2019 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group.
- ItemTowards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition(Basel : MDPI, 2022) Franck, Max; Dabrowski, Jaroslaw; Schubert, Markus Andreas; Wenger, Christian; Lukosius, MindaugasThe growth of hexagonal boron nitride (hBN) on epitaxial Ge(001)/Si substrates via high-vacuum chemical vapor deposition from borazine is investigated for the first time in a systematic manner. The influences of the process pressure and growth temperature in the range of 10−7–10−3 mbar and 900–980 °C, respectively, are evaluated with respect to morphology, growth rate, and crystalline quality of the hBN films. At 900 °C, nanocrystalline hBN films with a lateral crystallite size of ~2–3 nm are obtained and confirmed by high-resolution transmission electron microscopy images. X-ray photoelectron spectroscopy confirms an atomic N:B ratio of 1 ± 0.1. A three-dimensional growth mode is observed by atomic force microscopy. Increasing the process pressure in the reactor mainly affects the growth rate, with only slight effects on crystalline quality and none on the principle growth mode. Growth of hBN at 980 °C increases the average crystallite size and leads to the formation of 3–10 well-oriented, vertically stacked layers of hBN on the Ge surface. Exploratory ab initio density functional theory simulations indicate that hBN edges are saturated by hydrogen, and it is proposed that partial de-saturation by H radicals produced on hot parts of the set-up is responsible for the growth.
- ItemCorrection: Interface-engineered reliable HfO2-based RRAM for synaptic simulation (Journal of Materials Chemistry C (2019) DOI: 10.1039/c9tc04880d)(London [u.a.] : RSC, 2019) Wang, Qiang; Niu, Gang; Roy, Sourav; Wang, Yankun; Zhang, Yijun; Wu, Heping; Zhai, Shijie; Bai, Wei; Shi, Peng; Song, Sannian; Song, Zhitang; Xie, Ya-Hong; Ye, Zuo-Guang; Wenger, Christian; Meng, Xiangjian; Ren, WeiThere was an error in the author list of this published article. The corresponding authors for this paper are Gang Niu (gangniu@xjtu.edu.cn) and Wei Ren (wren@mail.xjtu.edu.cn). The footnote indicating that Qiang Wang and Gang Niu contributed equally to the work was not intended. The corrected author list and notations are shown here. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers. © The Royal Society of Chemistry 2019.
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