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Toward Reliable Compact Modeling of Multilevel 1T-1R RRAM Devices for Neuromorphic Systems

2021, Perez-Bosch Quesada, Emilio, Romero-Zaliz, Rocio, Perez, Eduardo, Kalishettyhalli Mahadevaiah, Mamathamba, Reuben, John, Schubert, Markus Andreas, Jimenez-Molinos, Francisco, Roldan, Juan Bautista, Wenger, Christian

In this work, three different RRAM compact models implemented in Verilog-A are analyzed and evaluated in order to reproduce the multilevel approach based on the switching capability of experimental devices. These models are integrated in 1T-1R cells to control their analog behavior by means of the compliance current imposed by the NMOS select transistor. Four different resistance levels are simulated and assessed with experimental verification to account for their multilevel capability. Further, an Artificial Neural Network study is carried out to evaluate in a real scenario the viability of the multilevel approach under study.

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Analogue pattern recognition with stochastic switching binary CMOS-integrated memristive devices

2020, Zahari, Finn, Pérez, Eduardo, Mahadevaiah, Mamathamba Kalishettyhalli, Kohlstedt, Hermann, Wenger, Christian, Ziegler, Martin

Biological neural networks outperform current computer technology in terms of power consumption and computing speed while performing associative tasks, such as pattern recognition. The analogue and massive parallel in-memory computing in biology differs strongly from conventional transistor electronics that rely on the von Neumann architecture. Therefore, novel bio-inspired computing architectures have been attracting a lot of attention in the field of neuromorphic computing. Here, memristive devices, which serve as non-volatile resistive memory, are employed to emulate the plastic behaviour of biological synapses. In particular, CMOS integrated resistive random access memory (RRAM) devices are promising candidates to extend conventional CMOS technology to neuromorphic systems. However, dealing with the inherent stochasticity of resistive switching can be challenging for network performance. In this work, the probabilistic switching is exploited to emulate stochastic plasticity with fully CMOS integrated binary RRAM devices. Two different RRAM technologies with different device variabilities are investigated in detail, and their potential applications in stochastic artificial neural networks (StochANNs) capable of solving MNIST pattern recognition tasks is examined. A mixed-signal implementation with hardware synapses and software neurons combined with numerical simulations shows that the proposed concept of stochastic computing is able to process analogue data with binary memory cells. © 2020, The Author(s).