Search Results

Now showing 1 - 10 of 16
  • Item
    Diode laser based light sources for biomedical applications
    (Hoboken, NJ : Wiley, 2012) Müller, André; Marschall, Sebastian; Jensen, Ole Bjarlin; Fricke, Jörg; Wenzel, Hans; Sumpf, Bernd; Andersen, Peter E.
    Diode lasers are by far the most efficient lasers currently available. With the ever-continuing improvement in diode laser technology, this type of laser has become increasingly attractive for a wide range of biomedical applications. Compared to the characteristics of competing laser systems, diode lasers simultaneously offer tunability, high-power emission and compact size at fairly low cost. Therefore, diode lasers are increasingly preferred in important applications, such as photocoagulation, optical coherence tomography, diffuse optical imaging, fluorescence lifetime imaging, and terahertz imaging. This review provides an overview of the latest development of diode laser technology and systems and their use within selected biomedical applications.
  • Item
    Spatially modulated broad-area lasers for narrow lateral far-field divergence
    (Washington, DC : Soc., 2021) Zeghuzi, Anissa; Koester, Jan-Philipp; Radziunas, Mindaugas; Christopher, Heike; Wenzel, Hans; Knigge, Andrea
    A novel laser design is presented that combines a longitudinal-lateral gain-loss modulation with an additional phase tailoring achieved by etching rectangular trenches. At 100 A pulsed operation, simulations predict a far-field profile with 0.3° full width at half maximum (ΘFWHM=0.3∘) where a 0.4°-wide main lobe contains 40% of the emitted optical output power (Θ40%=0.4∘). While far-field measurements of these structured lasers emitting 10 ns long pulses with 35 W peak power confirm a substantial enhancement of radiation within the central 1∘ angular range, the measured far-field intensity outside of the obtained central peak remains high.
  • Item
    16.3 w peak‐power pulsed all‐diode laser based multi‐wavelength master‐oscillator power‐amplifier system at 964 nm
    (Basel : MDPI, 2021) Vu, Thi Nghiem; Tien, Tran Quoc; Sumpf, Bernd; Klehr, Andreas; Fricke, Jörg; Wenzel, Hans; Tränkle, Günther
    An all-diode laser-based master oscillator power amplifier (MOPA) configuration for the generation of ns-pulses with high peak power, stable wavelength and small spectral line width is presented. The MOPA emits alternating at two wavelengths in the spectral range between 964 nm and 968 nm, suitable for the detection of water vapor by absorption spectroscopy. The monolithic master oscillator (MO) consists of two slightly detuned distributed feedback laser branches, whose emission is combined in a Y-coupler. The two emission wavelengths can be adjusted by varying the current or temperature to an absorption line and to a non-absorbing region. The power amplifier (PA) consists of a ridge-waveguide (RW) section and a tapered section, monolithically integrated within one chip. The RW section of the PA acts as an optical gate and converts the continuous wave input beam emitted by the MO into a sequence of short optical pulses, which are subsequently amplified by the tapered section to boost the output power. For a pulse width of 8 ns, a peak power of 16.3 W and a side mode suppression ratio of more than 37 dB are achieved at a repetition rate of 25 kHz. The measured spectral width of 10 pm, i.e., 0.1 cm−1, is limited by the resolution of the optical spectrum analyzer. The generated pulses emitting alternating at two wavelengths can be utilized in a differential absorption light detection and ranging system.
  • Item
    Wavelength-stabilized ns-pulsed 2.2 kW diode laser bar with multiple active regions and tunnel junctions
    (Stevenage : IET, 2022) Ammouri, Nor; Christopher, Heike; Fricke, Jörg; Ginolas, Arnim; Liero, Armin; Maaßdorf, Andre; Wenzel, Hans; Knigge, Andrea
    The improvement of the performance of a distributed Bragg reflector laser bar emitting near 905 nm through the use of multiple epitaxially stacked active regions and tunnel junctions is reported. The bar consisting of 48 emitters (each having an aperture of 50 µm) emits an optical power of 2.2 kW in 8 ns long pulses at an injection current of 1.1 kA. This corresponds to an almost threefold increase of the pulse power compared to a bar with lasers having only a single active region. Due to the integrated surface Bragg grating, the bar exhibits a narrow spectral bandwidth of about 0.3 nm and a thermal tuning of only 68 pm/K.
  • Item
    60% Efficient Monolithically Wavelength-Stabilized 970-nm DBR Broad-Area Lasers
    (New York, NY : IEEE, 2022) Crump, Paul; Miah, M. Jarez; Wilkens, Martin; Fricke, Jorg; Wenzel, Hans; Knigge, Andrea
    Progress in epitaxial design is shown to enable increased optical output power P opt and power conversion efficiency η E and decreased lateral far-field divergence angle in GaAs-based distributed Bragg reflector (DBR) broad-area (BA) diode lasers. We show that the wavelength-locked power can be significantly increased (saturation at high bias current is mitigated) by migrating from an asymmetric large optical cavity (ASLOC) based laser structure to a highly asymmetric (extreme-triple-asymmetric (ETAS)) layer design. For wavelength-stabilization, 7 th order, monolithic DBRs are etched on the surface of fully grown epitaxial layer structures. The investigated ETAS reference Fabry-Pérot (FP) BA lasers without DBRs and with 200 µm stripe width and 4 mm cavity length provide P opt = 29 W (still increasing) at 30 A in continuous-wave mode at room temperature, in contrast to the maximum P opt = 24 W (limited by strong power saturation) of baseline ASLOC lasers. The reference ETAS FP lasers also deliver over 10% higher η E at P opt = 24 W. On the other hand, in comparison to the wavelength-stabilized ASLOC DBR lasers, ETAS DBR lasers show a peak power increment from 14 W to 22 W, and an efficiency increment from 46% to 60% at P opt = 14 W. A narrow spectral width (< 1 nm at 95% power content) is maintained across a very wide operating range. Consistent with earlier studies, a narrower far-field divergence angle and consequently an improved beam-parameter product is also observed, compared to the ASLOC-based lasers.
  • Item
    Simulation and analysis of high-brightness tapered ridge-waveguide lasers
    (Dordrecht [u.a.] : Springer Science + Business Media B.V, 2023) Koester, Jan-Philipp; Wenzel, Hans; Wilkens, Martin; Knigge, Andrea
    In this work, a simulation-based analysis of a CW-driven tapered ridge-waveguide laser design is presented. Measurements of these devices delivered high lateral brightness values of 4 W · mm - 1mrad - 1 at 2.5W optical output power. First, active laser simulations are performed to reproduce these results. Next, the resulting complex valued intra-cavity refractive index distributions are the basis for a modal and beam propagation analysis, which demonstrates the working principle and limitation of the underlying lateral mode filter effect. Finally, the gained understanding is the foundation for further design improvements leading to lateral brightness values of up to 10 W · mm - 1mrad - 1 predicted by simulations.
  • Item
    Hybrid integrated mode-locked laser using a GaAs-based 1064 nm gain chip and a SiN external cavity
    (Washington, DC : Soc., 2022) Vissers, Ewoud; Poelman, Stijn; Wenzel, Hans; Christopher, Heike; Van Gasse, Kasper; Knigge, Andrea; Kuyken, Bart
    External cavity mode-locked lasers could be used as comb sources for high volume application such as LIDAR and dual comb spectroscopy. Currently demonstrated chip scale integrated mode-locked lasers all operate in the C-band. In this paper, a hybrid-integrated external cavity mode-locked laser working at 1064 nm is demonstrated, a wavelength beneficial for optical coherence tomography or Raman spectroscopy applications. Additionally, optical injection locking is demonstrated, showing an improvement in the optical linewidth, and an increased stability of the comb spectrum.
  • Item
    Mode transitions in distributed-feedback tapered master-oscillator power-amplifier
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2008) Radziunas, Mindaugas; Tronciu, Vasile Z.; Bandelow, Uwe; Lichtner, Mark; Spreemann, Martin; Wenzel, Hans
    Theoretical and experimental investigations have been carried out to study the spectral and spatial behavior of monolithically integrated distributed-feedback tapered master-oscillators power-amplifiers emitting around 973 nm. Introduction of self and cross heating effects and the analysis of longitudinal optical modes allows us to explain experimental results. The results show a good qualitative agreement between measured and calculated characteristics.
  • Item
    Efficient coupling of electro-optical and heat-transport models for broad-area semiconductor lasers
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2018) Radziunas, Mindaugas; Fuhrmann, Jürgen; Zeghuzi, Anissa; Wünsche, Hans-Jürgen; Koprucki, Thomas; Brée, Carsten; Wenzel, Hans; Bandelow, Uwe
    In this work, we discuss the modeling of edge-emitting high-power broad-area semiconductor lasers. We demonstrate an efficient iterative coupling of a slow heat transport (HT) model defined on multiple vertical-lateral laser cross-sections with a fast dynamic electro-optical (EO) model determined on the longitudinal-lateral domain that is a projection of the device to the active region of the laser. Whereas the HT-solver calculates temperature and thermally-induced refractive index changes, the EO-solver exploits these distributions and provides time-averaged field intensities, quasi-Fermi potentials, and carrier densities. All these time-averaged distributions are used repetitively by the HT-solver for the generation of the heat sources entering the HT problem solved in the next iteration step.
  • Item
    Mode transitions in DBR semiconductor lasers: experiments, mode analysis and simulations
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2010) Radziunas, Mindaugas; Hasler, Karl-Heinz; Sumpf, Bernd; Tien, Tran Quoc; Wenzel, Hans
    The paper is concerned with a general ansatz of a phenomenological evolution model for solid-solid phase transformation kinetics in steel. To model the phase transition of austenite-ferrite, -pearlite or -bainite, a first order nonlinear ordinary differential equation (ODE) is considered. The main goal of this paper is to derive certain conditions for parameters which based on data obtained from transformation diagrams. This leads to a set of independent parameters for which the inverse problem has an unique solution