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- ItemMiniature switchable millimeter-wave BiCMOS low-noise amplifier at 120/140 GHz using an HBT switch(Basel : MDPI, 2019) Heredia, Julio; Ribó, Miquel; Pradell, Lluís; Wipf, Selin Tolunay; Göritz, Alexander; Wietstruck, Matthias; Wipf, Christian; Kaynak, MehmetA 120-140 GHz frequency-switchable, very compact low-noise amplifier (LNA) fabricated in a 0.13 µm SiGe:C BiCMOS technology is proposed. A single radio-frequency (RF) switch composed of three parallel hetero junction bipolar transistors (HBTs) in a common-collector configuration and a multimodal three-line microstrip structure in the input matching network are used to obtain a LNA chip of miniaturized size. A systematic design procedure is applied to obtain a perfectly balanced gain and noise figure in both frequency states (120 GHz and 140 GHz). The measured gain and noise figure are 14.2/14.2 dB and 8.2/8.2 dB at 120/140 GHz respectively, in very good agreement with circuit/electromagnetic co-simulations. The LNA chip and core areas are 0.197 mm2 and 0.091 mm2, respectively, which supposes an area reduction of 23.4% and 15.2% compared to other LNAs reported in this frequency band. The experimental results validate the design procedure and its analysis. © 2019 by the authors.
- ItemSpitzenforschung und Innovation in den Neuen Ländern - Kompetenznetzwerk für Nanosystemintegration zu den Teilvorhaben: NEMS/MEMS-Elektronik-Integration für energieeffiziente Sensorknoten : Abschlussbericht ; Berichtszeitraum: 01.11.2011 - 31.10.2014(Hannover : Technische Informationsbibliothek (TIB), 2014) Wietstruck, Matthias; Fiebig, Norbert; Geßner, Thomas[no abstract available]
- ItemExperiments on MEMS Integration in 0.25 μm CMOS Process(Basel : MDPI, 2018) Michalik, Piotr; Fernández, Daniel; Wietstruck, Matthias; Kaynak, Mehmet; Madrenas, JordiIn this paper, we share our practical experience gained during the development of CMOS-MEMS (Complementary Metal-Oxide Semiconductor Micro Electro Mechanical Systems) devices in IHP SG25 technology. The experimental prototyping process is illustrated with examples of three CMOS-MEMS chips and starts from rough process exploration and characterization, followed by the definition of the useful MEMS design space to finally reach CMOS-MEMS devices with inertial mass up to 4.3 μg and resonance frequency down to 4.35 kHz. Furthermore, the presented design techniques help to avoid several structural and reliability issues such as layer delamination, device stiction, passivation fracture or device cracking due to stress.
- ItemAbschlussbericht zum BMBF Verbundprojekt: Kompetenznetzwerk für Nanosystemintegration : Anwendung von Nanotechnologien für energieeffiziente Sensorsysteme ; zu den Teilvorhaben: LPB - NEMS/MEMS-Elektronik-Integration für energieeffiziente Sensorknoten ; Berichtszeitraum: 1.11.2009 - 31.10.2012(Hannover : Technische Informationsbibliothek (TIB), 2013) Wietstruck, Matthias; Kaynak, Mehmet; Fiebig, Norbert[no abstract available]