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    On the growth of Co-doped BaFe2As2 thin films on CaF2
    (Bristol : IOP Publ., 2019) Langer, Marco; Meyer, Sven; Ackermann, Kai; Grünewald, Lukas; Kauffmann-Weiss, Sandra; Aswartham, Saicharan; Wurmehl, Sabine; Hänisch, Jens; Holzapfel, Bernhard
    The competition between phase formation of BaF2 and Ba(Fe1-xCox)2As2 on CaF2 single crystals has been analysed. Ba(Fe0.92Co0.08)2As2 thin films have been deposited by pulsed laser deposition. X-ray diffraction, atomic force microscopy and scanning electron microscopy studies have revealed that the formation of secondary phases and misorientations as well as the growth modes of the Ba(Fe0.92Co0.08)2As2 thin films strongly depend on the growth rate. At high growth rates, formation of BaF2 is suppressed. The dependency of the Ba(Fe0.92Co0.08)2As2 lattice parameters supports the idea of fluorine diffusion into the crystal structure upon suppression of BaF2 formation similar as was proposed for FeSe1-xTex thin films on CaF2. Furthermore, a growth mode transition from a layer growth mechanism to a three-dimensional growth mode at high supersaturation has been found, suggesting similarities between the growth mechanism of iron-based superconductors and high-T c cuprate thin films. © 2019 Published under licence by IOP Publishing Ltd.
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    Strong surface termination dependence of the electronic structure of polar superconductor LaFeAsO revealed by nano-ARPES
    ([London] : IOP, 2022) Jung, Sung Won; Rhodes, Luke C; Watson, Matthew D; Evtushinsky, Daniil V; Cacho, Cephise; Aswartham, Saicharan; Kappenberger, Rhea; Wurmehl, Sabine; Büchner, Bernd; Kim, Timur K
    The electronic structures of the iron-based superconductors have been intensively studied by using angle-resolved photoemission spectroscopy (ARPES). A considerable amount of research has been focused on the LaFeAsO family, showing the highest transition temperatures, where previous ARPES studies have found much larger Fermi surfaces than bulk theoretical calculations would predict. The discrepancy has been attributed to the presence of termination-dependent surface states. Here, using photoemission spectroscopy with a sub-micron focused beam spot (nano-ARPES) we have successfully measured the electronic structures of both the LaO and FeAs terminations in LaFeAsO. Our data reveal very different band dispersions and core-level spectra for different surface terminations, showing that previous macro-focus ARPES measurements were incomplete. Our results give direct evidence for the surface-driven electronic structure reconstruction in LaFeAsO, including formation of the termination-dependent surface states at the Fermi level. This experimental technique, which we have shown to be very powerful when applied to this prototypical compound, can now be used to study various materials with different surface terminations.
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    Evidence for a percolative Mott insulator-metal transition in doped Sr2IrO4
    (College Park, MD : APS, 2021) Sun, Zhixiang; Guevara, Jose M.; Sykora, Steffen; Pärschke, Ekaterina M.; Manna, Kaustuv; Maljuk, Andrey; Wurmehl, Sabine; van den Brink, Jeroen; Büchner, Bernd; Hess, Christian
    Despite many efforts to rationalize the strongly correlated electronic ground states in doped Mott insulators, the nature of the doping-induced insulator-to-metal transition is still a subject under intensive investigation. Here, we probe the nanoscale electronic structure of the Mott insulator Sr2IrO4−δ with low-temperature scanning tunneling microscopy and find an enhanced local density of states (LDOS) inside the Mott gap at the location of individual defects which we interpret as defects at apical oxygen sites. A chiral behavior in the topography for those defects has been observed. We also visualize the local enhanced conductance arising from the overlapping of defect states which induces finite LDOS inside of the Mott gap. By combining these findings with the typical spatial extension of isolated defects of about 2 nm, our results indicate that the insulator-to-metal transition in Sr2IrO4−δ could be percolative in nature.