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Author: Wuttig, Matthias × DDC: 530 ×

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    Nanostructured In3SbTe2 antennas enable switching from sharp dielectric to broad plasmonic resonances
    (Berlin : de Gruyter, 2022) Heßler, Andreas; Wahl, Sophia; Kristensen, Philip Trøst; Wuttig, Matthias; Busch, Kurt; Taubner, Thomas
    Phase-change materials (PCMs) allow for non-volatile resonance tuning of nanophotonic components. Upon switching, they offer a large dielectric contrast between their amorphous and crystalline phases. The recently introduced “plasmonic PCM” In3SbTe2 (IST) additionally features in its crystalline phase a sign change of its permittivity over a broad infrared spectral range. While optical resonance switching in unpatterned IST thin films has been investigated before, nanostructured IST antennas have not been studied, yet. Here, we present numerical and experimental investigations of nanostructured IST rod and disk antennas. By crystallizing the IST with microsecond laser pulses, we switched individual antennas from narrow dielectric to broad plasmonic resonances. For the rod antennas, we demonstrated a resonance shift of up to 1.2 µm (twice the resonance width), allowing on/off switching of plasmonic resonances with a contrast ratio of 2.7. With the disk antennas, we realized an increase of the resonance width by more than 800% from 0.24 µm to 1.98 µm while keeping the resonance wavelength constant. Further, we demonstrated intermediate switching states by tuning the crystallization depth within the resonators. Our work empowers future design concepts for nanophotonic applications like active spectral filters, tunable absorbers, and switchable flat optics.
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    Ordered Peierls distortion prevented at growth onset of GeTe ultra-thin films
    (London : Nature Publishing Group, 2016) Wang, Ruining; Campi, Davide; Bernasconi, Marco; Momand, Jamo; Kooi, Bart J.; Verheijen, Marcel A.; Wuttig, Matthias; Calarco, Raffaella
    Using reflection high-energy electron diffraction (RHEED), the growth onset of molecular beam epitaxy (MBE) deposited germanium telluride (GeTe) film on Si(111)-(√3 × √3)R30°-Sb surfaces is investigated, and a larger than expected in-plane lattice spacing is observed during the deposition of the first two molecular layers. High-resolution transmission electron microscopy (HRTEM) confirms that the growth proceeds via closed layers, and that those are stable after growth. The comparison of the experimental Raman spectra with theoretical calculated ones allows assessing the shift of the phonon modes for a quasi-free-standing ultra-thin GeTe layer with larger in-plane lattice spacing. The manifestation of the latter phenomenon is ascribed to the influence of the interface and the confinement of GeTe within the limited volume of material available at growth onset, either preventing the occurrence of Peierls dimerization or their ordered arrangement to occur normally.
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    Revisiting the local structure in Ge-Sb-Te based chalcogenide superlattices
    (London : Nature Publishing Group, 2016) Casarin, Barbara; Caretta, Antonio; Momand, Jamo; Kooi, Bart J.; Verheijen, Marcel A.; Bragaglia, Valeria; Calarco, Raffaella; Chukalina, Marina; Yu, Xiaoming; Robertson, John; Lange, Felix R.L.; Wuttig, Matthias; Redaelli, Andrea; Varesi, Enrico; Parmigiani, Fulvio; Malvestuto, Marco
    The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently, superlattice structures have been demonstrated to dramatically improve the optical and electrical performances of these chalcogenide based phase-change materials. In this perspective, unravelling the atomistic structure that originates the improvements in switching time and switching energy is paramount in order to design nanoscale structures with even enhanced functional properties. This study reveals a high- resolution atomistic insight of the [GeTe/Sb2Te3] interfacial structure by means of Extended X-Ray Absorption Fine Structure spectroscopy and Transmission Electron Microscopy. Based on our results we propose a consistent novel structure for this kind of chalcogenide superlattices.