Search Results
Switchable magnetic bulk photovoltaic effect in the two-dimensional magnet CrI3
2019, Zhang, Y., Holder, T., Ishizuka, H., de Juan, F., Nagaosa, N., Felser, C., Yan, B.
The bulk photovoltaic effect (BPVE) rectifies light into the dc current in a single-phase material and attracts the interest to design high-efficiency solar cells beyond the pn junction paradigm. Because it is a hot electron effect, the BPVE surpasses the thermodynamic Shockley–Queisser limit to generate above-band-gap photovoltage. While the guiding principle for BPVE materials is to break the crystal centrosymmetry, here we propose a magnetic photogalvanic effect (MPGE) that introduces the magnetism as a key ingredient and induces a giant BPVE. The MPGE emerges from the magnetism-induced asymmetry of the carrier velocity in the band structure. We demonstrate the MPGE in a layered magnetic insulator CrI3, with much larger photoconductivity than any previously reported results. The photocurrent can be reversed and switched by controllable magnetic transitions. Our work paves a pathway to search for magnetic photovoltaic materials and to design switchable devices combining magnetic, electronic, and optical functionalities.
Spin Hall effect emerging from a noncollinear magnetic lattice without spin-orbit coupling
2018, Zhang, Y., Železný, J., Sun, Y., Van Den Brink, J., Yan, B.
The spin Hall effect (SHE), which converts a charge current into a transverse spin current, has long been believed to be a phenomenon induced by spin-orbit coupling. Here, we identify an alternative mechanism to realize the intrinsic SHE through a noncollinear magnetic structure that breaks the spin rotation symmetry. No spin-orbit coupling is needed even when the scalar spin chirality vanishes, different from the case of the topological Hall effect and topological SHE reported previously. In known noncollinear antiferromagnetic compounds Mn3X (X = Ga, Ge, and Sn), for example, we indeed obtain large spin Hall conductivities based on ab initio calculations.